〈SMALL-SIGNAL TRANSISTOR〉 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (Super mini type) DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC4154 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. Complementary with ISA1602AM1. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION TERMINAL CONNECTER For Hybrid IC, small type machine low frequency voltage ①：BASE Amplify application. JEITA：SC-70 ②：EMITTER JEDEC： - ③：COLLECTOR MAXIMUM RATINGS（Ta=25℃） Symbol Ratings Unit VCBO Collector to Base voltage 50 V VCEO Collector to Emitter voltage 50 V VEBO Parameter 6 V Collector current 200 mA Pc Collector dissipation 200 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55∼＋150 ℃ I O Emitter to Base voltage MARKING L F Type name hFE Item ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter C to E break down voltage Symbol Unit Max 50 - - V CB=50V, I E=0mA - - 0.1 μA Emitter cut off current IEBO V EB =6V, I C=0mA - - 0.1 μA DC forward current gain※ hFE V CE =6V, I C=1mA 150 - 500 DC forward current gain hFE V CE=6V, I C=0.1mA 90 - - BE =∞ Typ ICBO V I C=100mA ,IB=10mA - - 0.3 V fT V CE=6V, I E=-10mA - 200 - MHz Collector output capacitance Cob V CB =6V, I E=0,f=1MHz - 2.5 - pF Noise figure NF V CE =6V, I E=-0.1mA,f=1kHz,RG=2kΩ - - 15 dB Gain bandwidth product VCE(sat) I C=100μA ,R Min Collector cut off current C to E Saturation Voltage V(BR)CEO Limits Test conditions ※） It shows hFE classification at right table. Item hFE Item ISAHAYA ELECTRONICS CORPORATION E 150∼300 F 250∼500 〈SMALL-SIGNAL TRANSISTOR〉 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (Super mini type) COMMON EMITTER TRANSFER COMMON EMITTER OUTPUT 0.16mA 50 Ta=25℃ 0.14mA Ta=25℃ VCE=6V 0.12mA 40 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 50 0.10mA 30 0.08mA 0.06mA 20 0.04mA 10 0.02mA 40 30 20 10 IB=0 0 0 0 1 2 3 4 COLLECTOR EMITTER VOLTAGE VCE(V) 5 0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 250 GAIN BAND WIDTH PRODUCT fT(MHz) Ta=25℃ VCE=6V 100(@IC=1mA) 1000 100 10 Ta=25℃ VCE=6V 200 150 100 0.1 1 10 100 50 0 -0.1 1 1000 -1 -10 EMITTER CURRENT IE(mA) COLLECTOR CURRENT IC(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE -100 COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 100 250 Ta=25℃ IE=0 f=1MHz COLLECTOR DISSIPATION Pc (mW) COLLECTOR OUTPUT CAPACITANCE Cob(pF) RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE 1 200 10 150 100 1 50 0 0 0.1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) ISAHAYA ELECTRONICS CORPORATION 125 150 〈SMALL-SIGNAL TRANSISTOR〉 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (Super mini type) ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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