ISA2188AM1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit：mm 2.1 ISA2188AM1 is a silicon PNP epitaxial type transistor Designed with high collector current, low VCE(sat). 1.25 0.3 ③ 0.15 0.65 ② 0～0.1 0.9 ●High collector current IC（MAX）=-650mA ●Low collector to emitter saturation voltage VCE（sat）<-0.7Vmax 0.65 FEATURE ① 0.425 0.7 2.0 1.3 0.425 APPLICATION For switching application, small type motor drive application. TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR JEITA：SC-70 JEDEC： － MAXIMUM RATINGS（Ta=25℃） Symbol VCEO VCBO VEBO ICM IC PC Tj Tstg Parameter Collector to Emitter voltage Collector to Base voltage Emitter to Base voltage Peak collector current Collector current Collector dissipation Junction temperature Storage temperature Ratings -20 -25 -4 -1000 -650 200 150 -55～150 Unit V V V mA mA mW ℃ ℃ MARKING hFE ITEM Type Name ・ AF ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol V（BR）CEO V（BR）CBO V（BR）EBO ICBO IEBO hFE※ VCE（sat） fT Parameter Test condition C to E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product *：It shows hFE classification in below table. Min -20 -25 -4 IC=-100uA, IB=0 IC=-10uA, IE=0 IE=-10uA, IC=0 VCB=-25V, IE=0 VEB=-2V, IC=0 IC=-100mA, VCE=-4V IC=-500mA, IB=-25mA IE=10mA, VCE=-6V,f=100MHz Limits Typ 150 -0.3 210 Max -1 -1 800 -0.7 Unit V V V uA uA V MHz ITEM E F G hFE 150～300 250～500 400～800 ISAHAYA ELECTRONICS CORPORATION ISA2188AM1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE -1000 300 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)(mV) COLLECTOR DISSIPATION Pc(mW) IC/IB=20 250 200 150 100 50 -100 25℃ 85℃ -40℃ -10 0 0 50 100 150 -1 AMBIENT TEMPERATURE Ta(℃) -1 -10 -100 -1000 COLLECTOR CURRENT IC(mA) DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT COMMON EMITTER TRANSFER -1000 VCE=-4V VCE=-4V 85℃ COLLECTOR CURRENT IC(mA) DC FORWARD CURRENT GAIN hFE(-) 10000 25℃ 1000 -40℃ 100 -100 25℃ -10 85℃ -40℃ -1 -0.1 -0.01 10 -0.1 -1 -10 -100 -0.1 -1000 COMMON EMITTER OUTPUT(1) COMMON EMITTER OUTPUT(2) Ta=25℃ -200 -800 -8mA -7mA -0.6mA -6mA -0.5mA -5mA -10mA -4mA COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) Ta=25℃ -0.3mA -0.4mA -160 -600 -3mA -2mA -400 -10 BASE TO EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA) -9mA -1 -1mA -200 Pc=200mW -0.2mA -120 -80 -0.1mA -40 IB=0mA IB=0mA Pc=200mW -0 -0 -0 -1 -2 -3 -4 COLLECTOR TO EMITTER VOLTAGE VCE(V) -5 -0 -5 -10 -15 COLLECTOR TO EMITTER VOLTAGE VCE(V) ISAHAYA ELECTRONICS CORPORATION -20 ISA2188AM1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT GAIN BAND WIDTH PRODUCT fT(MHz) 500 Ta=25℃ VCE=-6V 400 300 200 100 0 1 10 100 1000 EMITTER CURRENT IE(mA) ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Apr.2012