<SMALL-SIGNAL TRANSISTOR> INC6006AS1 PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING INC6006AS1 is a silicon NPN transistor. UNIT：ｍｍ 4.0 3.0 7.5MAX It is designed with high voltage. FEATURE 0.1 14.0 ・Low voltage VCE(sat) = 0.2V(MAX) ・Complementary ： INA6006AS1 1.0 ・High voltage VCEO = 160V 13.0MIN 1.0 ・Small package for easy mounting. 0.45 2.5 2.5 0.4 APPLICATION 2.5 High voltage switching. ① ② ③ TERMINAL CONNECTOR ①：EMITTER JEITA：- ②：COLLECTOR JEDEC：- ③：BASE MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER RATING UNIT 180 V 6 V VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage 160 V I CM Peak collector current 200 mA I C Collector current 100 mA PC Collector dissipation(Ta=25℃) 600 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ MARKING Type Name C06 □□W hFE ITEM LOT No ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL PARAMETER TEST CONDITIONS MIN LIMITS TYP MAX UNIT V(BR)CBO C to B break down voltage I C=100μA，I E=0A 180 - - V V(BR)EBO E to B break down voltage I E=10μA，I C=0A 6 - - V V(BR)CEO C to E break down voltage I C=1mA，RBE=∞ 160 - - V ICBO Collector cut off current VCB=120V，I E =0A - - 100 nA IEBO Emitter cut off current VEB=4V，I C=0A - - 100 nA hFE1 DC forward current gain1 VCE=5V，I C=1mA 72 - - - hFE2 DC forward current gain2 VCE=5V，I C=10mA 72 - 330 - hFE3 DC forward current gain3 VCE=5V，I C=50mA 27 - - - VCE(sat)1 C to E saturation voltage1 I C=10mA，I B=1mA - - 0.15 V VCE(sat)2 C to E saturation voltage2 I C=50mA，I B=5mA - - 0.2 V VBE(sat)1 B to E saturation voltage1 I C=10mA，I B=1mA - - 1.0 V VBE(sat)2 B to E saturation voltage2 I C=50mA，I B=5mA - - 1.0 V fT Gain bandwidth product VCE=10V，I E=-10mA 100 - 300 MHz Cob Collector output capacitance VCB=10V，I E=0A，f=1MHz - 1.7 6 pF Cib Collector input capacitance VEB=0.5V，I c=0A，f=1MHz - - 20 pF ISAHAYA ELECTRONICS CORPORATION <SMALL-SIGNAL TRANSISTOR> INC6006AS1 PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE TYPICIAL CHARACTERISTICS DC forward current gain VS. Collector current COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE 800 1000 DC forward current gain hFE COLLECTOR DISSIPATION Pc (mW) VCE=5V 700 600 500 400 300 200 85℃ 25℃ 100 -40℃ 100 10 0.01 0 0 50 100 0.1 150 Collector current IC(mA) VCE=5V 10 85℃ 1 -40℃ 0.1 0.01 1 1.5 COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat) （V) 100 0.5 1 IC/IB=10 0.1 -40℃ 0.01 0.01 0.1 1 10 100 COLLECTOR CURRENT IC(mA) COMMON EMITTER OUTPUT BASE TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT 10 50 25℃ 45 IC/IB=10 COLLECTOR CURRENT IC (mA) COLLECTOR TO EMITTERSATURATION VOLTAGE VBE(sat) （V) 85℃ 25℃ BASE TO EMITTER VOLTAGE VBE (V) -40℃ 25℃ 1 40 IB=300uA 35 IB=250uA 30 IB=200uA 25 20 IB=150uA 15 IB=100uA 10 IB=50uA 5 85℃ IB=0uA 0 0.1 0.01 100 COLLECTOR TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT COMMON EMITTER TRANSFER 0 10 Collector current IC(mA) AMBIENT TEMPERATURE Ta (℃) 25℃ 1 0 0.1 1 10 100 5 10 15 COLLECTOR EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC(mA) ISAHAYA ELECTRONICS CORPORATION 20 <SMALL-SIGNAL TRANSISTOR> INC6006AS1 PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE COLLECTOR OUTPUT CAPACITANCE Cob (pF) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 1000 GAIN BAND WIDTH PRODUCT ｆT (MHｚ) FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Ta=25℃ VCE=10V 100 10 1 0.1 1 10 100 10 Ta=25℃ f=1MHz 1 0.1 1 EMITTER INPUT CAPACITANCE VS. BASE TO EMITTER VOLTAGE EMITTER INTPUT CAPACITANCE Cib (pF) 100 Ta=25℃ f=1MHz 10 1 0.1 1 10 COLLECTOR TO BASE VOLTAGE VCB (V) EMITTER CURRENT IE (ｍA) 10 EMITTER TO BASE VOLTAGE VEB (V) ISAHAYA ELECTRONICS CORPORATION 100 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Mar.2013