TYSEMI KDS4470

IC
IC
MOSFET
SMD Type
Product specification
KDS4470
Features
12.5 A, 40 V. RDS(ON) = 9m
@ VGS = 10 V
Low gate charge (45 nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
40
V
Gate to Source Voltage
VGS
+30/-20
V
12.5
A
50
A
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
Power dissipation
(Note 1a)
Power dissipation
(Note 1b)
Power dissipation
(Note 1c)
2.5
PD
1.4
W
1.2
Operating and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Resistance Junction to Ambient (Note 1a)
R
JA
50
/W
Thermal Resistance Junction to Ambient (Note 1c)
R
JA
125
/W
Thermal Resistance Junction to Case (Note 1)
R
JC
25
/W
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[email protected]
4008-318-123
1 of 2
IC
IC
MOSFET
SMD Type
Product specification
KDS4470
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain-Source Avalanche Energy
EAS
Single Pulse,VDD=40V,ID=12.5A( Not 2)
370
mJ
Drain-Source Avalanche Current
IAS
( Not 2)
12.5
A
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 250
ID = 250
40
A
V
42
A, Referenced to 25
mV/
Zero Gate Voltage Drain Current
IDSS
VDS = 32 V, VGS = 0 V
1
Gate-Body Leakage, Forward
IGSSF
VGS = 30 V, VDS = 0 V
100
nA
Gate-Body Leakage, Reverse
IGSSR
VGS = -20 V, VDS = 0 V
-100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
5
V
Gate Threshold Voltage Temperature
Coefficient
ID = 250
Static Drain-Source On-Resistance
RDS(on)
On-State Drain Current
Output Capacitance
Coss
6
9
9
14
25
45
S
2659
pF
605
pF
VDS = 20 V, VGS = 0 V,f = 1.0 MHz
Crss
298
Turn-On Delay Time
td(on)
14
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
VDS = 20 V, ID = 12.5 A,VGS = 10 V
(Note 2)
VSD
trr
Diode Reverse Recovery Charge
Qrr
pF
25
12
22
ns
59
ns
29
46
ns
45
63
nC
27
nC
5
nC
2.1
VGS = 0 V, IS = 2.1 A (Not 2)
IF = 12.5 A, diF/dt = 100 A/
[email protected]
0.7
s
4008-318-123
ns
37
IS
Diode Reverse Recovery Time
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VDD = 20 V, ID = 1 A,VGS = 10 V, RGEN =
6 (Note 2)
tf
Total Gate Charge
m
A
Reverse Transfer Capacitance
Turn-On Rise Time
mV/
VGS = 10 V, ID =12.5 A,TJ = 125
VDS = 10V, ID = 12.5 A
gFS
Ciss
-8
VGS = 10 V, ID = 12.5 A
VGS = 10 V, VDS = 5 V
Forward Transconductance
3.9
A, Referenced to 25
ID(on)
Input Capacitance
2
A
A
1.2
A
V
33
nS
39
nC
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