IC IC MOSFET SMD Type Product specification KDS4470 Features 12.5 A, 40 V. RDS(ON) = 9m @ VGS = 10 V Low gate charge (45 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 40 V Gate to Source Voltage VGS +30/-20 V 12.5 A 50 A Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) 2.5 PD 1.4 W 1.2 Operating and Storage Temperature Range TJ, TSTG -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Ambient (Note 1c) R JA 125 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC MOSFET SMD Type Product specification KDS4470 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Avalanche Energy EAS Single Pulse,VDD=40V,ID=12.5A( Not 2) 370 mJ Drain-Source Avalanche Current IAS ( Not 2) 12.5 A Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 ID = 250 40 A V 42 A, Referenced to 25 mV/ Zero Gate Voltage Drain Current IDSS VDS = 32 V, VGS = 0 V 1 Gate-Body Leakage, Forward IGSSF VGS = 30 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 5 V Gate Threshold Voltage Temperature Coefficient ID = 250 Static Drain-Source On-Resistance RDS(on) On-State Drain Current Output Capacitance Coss 6 9 9 14 25 45 S 2659 pF 605 pF VDS = 20 V, VGS = 0 V,f = 1.0 MHz Crss 298 Turn-On Delay Time td(on) 14 tr Turn-Off Delay Time td(off) Turn-Off Fall Time Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VDS = 20 V, ID = 12.5 A,VGS = 10 V (Note 2) VSD trr Diode Reverse Recovery Charge Qrr pF 25 12 22 ns 59 ns 29 46 ns 45 63 nC 27 nC 5 nC 2.1 VGS = 0 V, IS = 2.1 A (Not 2) IF = 12.5 A, diF/dt = 100 A/ [email protected] 0.7 s 4008-318-123 ns 37 IS Diode Reverse Recovery Time http://www.twtysemi.com VDD = 20 V, ID = 1 A,VGS = 10 V, RGEN = 6 (Note 2) tf Total Gate Charge m A Reverse Transfer Capacitance Turn-On Rise Time mV/ VGS = 10 V, ID =12.5 A,TJ = 125 VDS = 10V, ID = 12.5 A gFS Ciss -8 VGS = 10 V, ID = 12.5 A VGS = 10 V, VDS = 5 V Forward Transconductance 3.9 A, Referenced to 25 ID(on) Input Capacitance 2 A A 1.2 A V 33 nS 39 nC 2 of 2