Transistors IC IC SMD Type Product specification KDR8702H Features N-Ch RDS(ON) = 54m @ VGS = 2.5 V 3.6 A, 20 V RDS(ON) = 38m @ VGS =4.5V P-Ch -2.6 A, -20 V RDS(ON) = 110 m RDS(ON) = 80 m @ VGS =- 2.5 V @ VGS =-4.5V Fast switching speed High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Drain to Source Voltage VDSS 20 -20 V Gate to Source Voltage VGS 8 V -2.6 A Drain Current Continuous (Note 1a) ID Drain Current Pulsed 12 3.6 15 Power Dissipation for Single Operation (Note 1a) Operating and Storage Temperature -10 PD 0.8 TJ, TSTG -55 to 150 Unit A W Thermal Resistance Junction to Ambient (Note 1a) R JA 146 /W Thermal Resistance Junction to Ambient (Note 1b) R JA 76 /W Thermal Resistance Junction to Case (Note 1) R JC 40 /W http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Transistors IC IC SMD Type Product specification KDR8702H Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 IDSS Gate-Body Leakage IGSS VGS(th) A, Referenced to 25 Min N-Ch 20 P-Ch -20 36 P-Ch -15 N-Ch 1 P-Ch -1 VGS = 12 V, VDS = 0 V N-Ch 100 VGS = 8 V, VDS = 0 V P-Ch 100 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A A, Referenced to 25 A, Referenced to 25 Static Drain-Source On-Resistance RDS(on) VGS = 2.5 V, ID = 3.1 A N-Ch 0.6 0.8 1.5 P-Ch -0.4 -0.7 -1.6 N-Ch -2 P-Ch 2.5 N-Ch Forward Transconductance Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time http://www.twtysemi.com ID(on) gFS RG Ciss td(on) tr td(off) tf 54 41 58 80 85 110 83 108 VGS = 4.5 V, VDS = 5V N-Ch 10 VGS = -4.5 V, VDS = -5V P-Ch -10 VDS = VGS, ID = 250 A N-Ch 15 VDS = VGS, ID = -250 A P-Ch 9 N-Ch 1 VGS = 15 mV, f = 1.0 MHz P-Ch 4.8 N-Channel 650 VDS = 10 V, VGS = 0 V,f = 1.0 MHz P-Ch 607 N-Ch 170 P-Channel P-Ch 165 VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Ch 80 P-Ch 60 V m S pF pF pF N-Channel N-Ch 8 16 VDD = 10 V, ID = 1 A, P-Ch 12 22 VGS = 4.5 V, RGEN = 6 N-Ch 9 18 P-Ch 11 20 P-Channel N-Ch 16 29 VDD = -10 V, ID = -1 A, P-Ch 26 42 VGS = -4.5 V, RGEN = 6 N-Ch 7 14 P-Ch 8 16 [email protected] nA A N-Ch Coss Crss 38 42 66 VGS = -4.5 V, ID =-2.6 A,TJ = 125 On-State Drain Current 31 VGS = -4.5 V, ID =-2.6 A P-Ch A mV/ VGS = 4.5 V, ID =3.6 A,TJ = 125 VGS = -2.5 V, ID =-2.2 A Unit mV/ VDS = -16 V, VGS = 0 V ID = -250 RDS(on) Max V N-Ch VGS = 4.5 V, ID =3.6A Static Drain-Source On-Resistance Typ VDS = 16V, VGS = 0 V ID = 250 Gate Threshold Voltage Temperature Coefficient A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A VGS = 0 V, ID = -250 ID = 250 Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Testconditons Symbol 4008-318-123 ns ns ns ns 2 of 3 Transistors IC IC SMD Type Product specification KDR8702H Electrical Characteristics Ta = 25 Parameter Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd Maximum Continuous Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage VSD Diode Reverse Recovery Time Testconditons Symbol trr Typ Max N-Channel N-Ch 7 10 VDS =10V,ID=3.6A,VGS=4.5V P-Ch 6 8 (Note 2) N-Ch 1.3 P-Channel P-Ch 1.2 VDS=-10V,ID=-2.6A,VGS=-4.5V N-Ch 2.2 (Note 2) P-Ch 1.6 http://www.twtysemi.com Qrr 0.7 P-Ch -0.7 0.7 1.2 P-Ch -0.7 -1.2 N-Channel N-Ch 16 P-Ch 22 P-Channel Diode Reverse Recovery Charge N-Ch N-Ch Irm IF =-2.6A,diF/dt = 100 A/ [email protected] s N-Ch 0.6 P-Ch 0.7 N-Ch 5 P-Ch 8 4008-318-123 nC nC VGS = 0 V, IS = -0.7A (Not 2) s Unit nC VGS = 0 V, IS = 0.7A (Not 2) IF =3.6A,diF/dt = 100 A/ Maximum Reverse Recovery Current Min A V nS A nC 3 of 3