Diodes IC Transistors Transistor T SMD Type Product specification KTA1663 SOT-89 ■ Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 ● Collector Power Dissipation: PC=500mW 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1 4.00-0.1 ● Collector Current:IC=-1.5A +0.1 3.00-0.1 1. Source Base 1 1. Base 2 2. Collector 2. Drain Collector 3 Emitter 3. Emiitter 3. Gate ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage 1 Unit VEBO -5 V Collector Current IC -1.5 A Base Current IB -0.3 A PC 500 mW PC* 1 W Tj 150 ℃ Tstg -55 to 150 ℃ Collector Power Dissipation Junction Temperature Storage Temperature Range * mounted on ceramic substrate (250mm2 X 0.8t) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -30 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 V Collector Cut-off Current ICBO VCB=-30V, IE=0 -100 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 -100 nA DC Current Gain hFE VCE=-2V, IC=-500mA Collector-Emitter Saturation Voltage VCE(sat) 100 320 IC=-1.5A, IB=-0.03A -2.0 V Base-Emitter Voltage VBE VCE=-2V, IC=-500mA -1.0 V Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 50 pF Transition Frequency fT VCE=-2V, IC=-500mA 120 MHz ■ hFE Classification Marking Rank Range HO O 100～200 http://www.twtysemi.com HY Y 160 ～320 [email protected] 4008-318-123 1 of 1