QL65J7SA

QL65J7SA
TECHNICAL DATA
High Power Infrared Laser Diode
Features
•
•
•
•
Applications
•
•
Visible Light Output: typ. 660nm
Optical Power Output: 50 mW CW
Package Type: TO-18 (5.6 mm)
Built-in Photo Diode for Monitoring
Laser Diode
DVD R/RW
Optical Module
PIN CONNECTION
1. Laserdiode cathode
2. Laserdiode anode and photodiode cathode
3. Photodiode anode
Absolute Maximum Rating (TC=25°C)
Type
Absolute Maximum Ratings
Optical Output Power
Laser Diode Reverse Voltage
Photo Diode Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
Value
Unit
P
V
V
TOP
TSTG
60
2
30
-10 … +75
-40 … +85
mW
V
V
°C
°C
Electgrical and Optical Characteristics (TC=25°C)
Type
Optical Specification
Output Power
Lasing Wavelength
Beam Divergence
Beam Angle
Electrical Specification
Slope Efficiency
Threshold Current
Operation Current
Operation Voltage
23.02.2010
Symbol
Min.
Typ.
Max.
Unit
PO
λP
θІІ
θ┴
ΔθІІ
Δθ┴
653
6
15
-
50
660
9
20
-
667
12
25
±3
±3
mW
nm
deg
deg
deg
deg
ES
Ith
IOP
VOP
30
-
QL65J7SA
1.0
45
90
2.6
60
120
3.0
Condition
PO =50mW
PO =50mW
PO =50mW
PO =50mW
PO =50mW
PO =50mW
mW/mA PO =30~50mW
mA
PO =50mW
mA
PO =50mW
V
PO =50mW
1 of 2
Package Dimensons
TO-18 Package (Unit:mm)
23.02.2010
QL65J7SA
2 of 2