SMD Type Type SMD Transistors IC Product specification 2SC4983 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 AF power amplifier, medium-speed switching, 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 small-sized motor drivers and LED drivers. +0.05 0.1-0.01 +0.1 0.97-0.1 Large current capacity. 0-0.1 +0.1 0.38-0.1 Low collector-to-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Collector current (pulse) ICP 3 A Base current IB 200 mA Collector dissipation PC 250 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current IcBO VCB = 12V , IE = 0 Emitter cutoff current IEBO VEB = 4V , IC = 0 DC current Gain hFE VCE = 2V , IC = 50mA fT VCE = 2V , IC = 50mA Gain bandwidth product Common base output capacitance Cob Collector-to-emitter saturation voltage VCE(sat) Base-to-emitter saturation voltage Min Typ 135 Max Unit 100 nA 100 nA 600 200 MHz VCB = 10V , f = 1MHz 10 IC = 5mA , IB = 0.5mA 10 25 mV IC = 500mA , IB = 25mA 120 240 mV 0.9 1.2 V VBE(sat) IC = 500mA , IB = 25mA pF Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 15 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = 15 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 5 V hFE Classification KN Marking Rank 5 6 7 hFE 135 270 200 400 300 600 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1