KEXIN 2SC4983

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistors
2SC4983
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
AF power amplifier, medium-speed switching,
1
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
small-sized motor drivers and LED drivers.
+0.05
0.1-0.01
+0.1
0.97-0.1
Large current capacity.
0-0.1
+0.1
0.38-0.1
Low collector-to-emitter saturation voltage.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Collector current (pulse)
ICP
3
A
Base current
IB
200
mA
Collector dissipation
PC
250
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
IcBO
VCB = 12V , IE = 0
Emitter cutoff current
IEBO
VEB = 4V , IC = 0
DC current Gain
hFE
VCE = 2V , IC = 50mA
fT
VCE = 2V , IC = 50mA
Gain bandwidth product
Common base output capacitance
Cob
Collector-to-emitter saturation voltage
VCE(sat)
Min
135
Max
Unit
100
nA
100
nA
600
200
MHz
VCB = 10V , f = 1MHz
10
IC = 5mA , IB = 0.5mA
10
25
mV
IC = 500mA , IB = 25mA
120
240
mV
0.9
1.2
V
VBE(sat) IC = 500mA , IB = 25mA
Base-to-emitter saturation voltage
Typ
pF
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
15
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
15
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
5
V
hFE Classification
KN
Marking
Rank
5
6
7
hFE
135 270
200 400
300 600
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