Product specification FMMT3903 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Switching transistors 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current IC 200 mA Power dissipation Ptot 330 mW Tj,Tstg -55 to +150 Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification FMMT3903 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10ìA 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA 40 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA 6 V Collector cutoff current ICEX VCE=30V, VBE(off) =3V Emitter cut-off current IBEX VCE=30V, VEB(off) =3V DC current gain * hFE IC=10mA, VCE=1V Collector-emitter saturation voltage * IC=10mA, IB=1mA VCE(sat) IC=50mA, IB=5mA Base-emitter saturation voltage * VBE(sat) Current-gain-bandwidth product fT 50 IC=10mA, VCE=20V f=100MHz nA 50 nA 150 0.65 IC=10mA, IB=1mA IC=50mA, IB=5mA 50 0.2 0.3 V 0.85 0.95 V 250 MHz Output capacitance Cobo VCB=5V, IE=0, f=100KHz 4 pF Input capacitance Cibo VBE=0.5V, IC=0, f=100KHz 8 pF Noise figure NF VCE=5V IC=200ìA,Rg=2KÙ f=30Hz to 15KHz at-3dB points 6 dB Delay time td 35 ns Rise time tr Storage time ts Fall time tf * Pulse test: tp 300ìs; d VCC=3V, IC=10mA,IB1=1mA VBE(off)=0.5V VCC=3V, IC=10mA IB1= IB2=1mA 35 ns 175 ns 50 ns 0.02. Marking Marking 1W http://www.twtysemi.com [email protected] 4008-318-123 2 of 2