Transistors IC SMD Type Product specification FMMT4400 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 General purpose transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current IC 600 mA Power dissipation Ptot 330 mW Tj,Tstg -55 to +150 Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA 40 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA 6 VCE=35V VEB(off) =0.4V ìA VCE=35V VEB(off) =3V 0.1 ìA ICEX Base cut-off current IBEX DC current gain * hFE IC=150mA, VCE=1V Collector-emitter saturation voltage * IC=150mA,IB=15mA VCE(sat) IC=500mA,IB=50mA Base-emitter saturation voltage * VBE(sat) Current-gain-bandwidth product fT Output capacitance Cobo Input capacitance Cibo V 0.1 Collector-emitter cut-off current 50 IC=150mA,IB=15mA IC=500mA,IB=50mA 0.75 IC=20mA, VCE=10V f=100KHz 200 150 0.4 0.75 V 0.95 1.2 V MHz VCB=5V, IE=0, f=100KHz 6.5 pF VBE=0.5V, IC=0, f=100KHz 30 pF Delay time ton VCC=30V, IC=150mA,IB1=15mA VBE(off)=2V 35 ns Storage time toff VCC=30V, IC=150mA IB1= IB2=15mA 255 ns * Pulse test: tp 300 ìs; d 0.02. Marking Marking 1KZ http://www.twtysemi.com [email protected] 4008-318-123 1 of 1