IRF IRFR4104TRPBF

PD - 95425B
IRFR4104PbF
IRFU4104PbF
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
VDSS = 40V
RDS(on) = 5.5mΩ
G
ID = 42A
S
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating . These features combine to make this design
an extremely efficient and reliable device for use in a
wide variety of applications.
D-Pak
IRFR4104PbF
I-Pak
IRFU4104PbF
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
119
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
IDM
42
480
PD @TC = 25°C Power Dissipation
140
W
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS (Thermally limited) Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
EAS (Tested )
0.95
± 20
W/°C
V
145
mJ
c
d
c
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
h
310
See Fig.12a, 12b, 15, 16
g
-55 to + 175
°C
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
y
Parameter
RθJA
RθJA
Junction-to-Ambient
i
y
10 lbf in (1.1N m)
Thermal Resistance
Junction-to-Case
Junction-to-Ambient (PCB mount)
A
mJ
Soldering Temperature, for 10 seconds
RθJC
A
84
Typ.
Max.
–––
1.05
–––
40
–––
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
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09/21/10
IRFR/U4104PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
RDS(on)
Min. Typ. Max. Units
–––
–––
Breakdown Voltage Temp. Coefficient
–––
0.032
–––
Static Drain-to-Source On-Resistance
–––
4.3
5.5
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
IDSS
Forward Transconductance
58
–––
–––
S
VDS = 10V, ID = 42A
–––
–––
20
µA
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
IGSS
Drain-to-Source Leakage Current
V
Conditions
40
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 42A
e
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Qg
Total Gate Charge
–––
59
89
Qgs
Gate-to-Source Charge
–––
19
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
24
–––
td(on)
Turn-On Delay Time
–––
17
–––
VDD = 20V
tr
Rise Time
–––
69
–––
ID = 42A
td(off)
Turn-Off Delay Time
–––
37
–––
tf
Fall Time
–––
36
–––
VGS = 10V
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Input Capacitance
–––
2950
–––
and center of die contact
VGS = 0V
Coss
Output Capacitance
–––
660
–––
Crss
Reverse Transfer Capacitance
–––
370
–––
Coss
Output Capacitance
–––
2130
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
590
–––
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
850
–––
VGS = 0V, VDS = 0V to 32V
ID = 42A
nC
VDS = 32V
VGS = 10V
ns
nH
RG = 6.8 Ω
e
e
VDS = 25V
pF
ƒ = 1.0MHz
f
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
42
ISM
(Body Diode)
Pulsed Source Current
–––
–––
480
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
28
42
ns
Qrr
Reverse Recovery Charge
–––
24
36
nC
ton
Forward Turn-On Time
2
c
Conditions
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 42A, VGS = 0V
TJ = 25°C, IF = 42A, VDD = 20V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFR/U4104PbF
ID, Drain-to-Source Current (A)
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
VGS
TOP
ID, Drain-to-Source Current (A)
1000
1
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
60µs PULSE WIDTH
Tj = 175°C
1
0.1
0
1
10
100
100
0.1
0
VDS, Drain-to-Source Voltage (V)
10
100
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
Gfs, Forward Transconductance (S)
T J = 25°C
ID, Drain-to-Source Current (Α)
1
T J = 175°C
100
10
VDS = 20V
60µs PULSE WIDTH
T J = 175°C
100
80
60
TJ = 25°C
40
20
VDS = 10V
380µs PULSE WIDTH
1
4
6
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
0
0
20
40
60
80
100
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3
IRFR/U4104PbF
5000
ID= 42A
VGS, Gate-to-Source Voltage (V)
4000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
3000
2000
Coss
1000
VDS= 32V
VDS= 20V
16
12
8
4
Crss
0
0
1
10
0
100
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000.0
T J = 175°C
10.0
T J = 25°C
1.0
VGS = 0V
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
80
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100
100µsec
10
1msec
1
2.0
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
0.0
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100.0
40
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
4
20
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U4104PbF
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
120
LIMITED BY PACKAGE
ID , Drain Current (A)
100
80
60
40
20
0
ID = 42A
VGS = 10V
1.5
1.0
0.5
25
50
75
100
125
150
175
-60 -40 -20
T C , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
τJ
0.05
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
τ
Ri (°C/W)
0.5067
τi (sec)
0.000414
0.5428
0.004081
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U4104PbF
DRIVER
L
VDS
D.U.T
RG
20V
VGS
+
V
- DD
IAS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
600
15V
ID
9.2A
13A
BOTTOM 42A
TOP
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
QGD
4.0
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
VGS(th) Gate threshold Voltage (V)
10 V
ID = 250µA
3.0
2.0
1.0
-75 -50 -25
VGS
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage Vs. Temperature
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IRFR/U4104PbF
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
10
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
160
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 42A
120
80
40
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7
IRFR/U4104PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
„
•
•
•
•
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
*

RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
Period
P.W.
+
VDD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
VGS
RG
RD
D.U.T.
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
8
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IRFR/U4104PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WITH AS SEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 2001
IN THE AS SEMBLY LINE "A"
PART NUMBER
INTERNAT IONAL
RECTIF IER
LOGO
Note: "P" in assembly line position
indicates "Lead-Free"
IRFR120
12
116A
34
AS SEMBLY
LOT CODE
DAT E CODE
YEAR 1 = 2001
WEEK 16
LINE A
"P" in ass embly line pos ition indicates
"Lead-Free" qualification to the consumer-level
OR
INT ERNATIONAL
RECTIF IER
LOGO
PART NUMBER
IRFR120
12
AS SEMBLY
LOT CODE
34
DAT E CODE
P = DESIGNATES LEAD-F REE
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-F REE
PRODUCT QUALIFIED TO T HE
CONS UMER LEVEL (OPTIONAL)
YEAR 1 = 2001
WEEK 16
A = ASS EMBLY SITE CODE
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/
data/auirfr4104.pdf
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRFR/U4104PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF U120
WIT H AS S EMBLY
LOT CODE 5678
AS S EMBLED ON WW 19, 2001
IN T HE AS S EMBLY LINE "A"
INT E RNAT IONAL
RECT IF IER
LOGO
PART NUMBER
IRFU120
119A
56
78
AS S EMBLY
LOT CODE
Note: "P" in as s embly line pos ition
indicates Lead-Free"
DAT E CODE
YE AR 1 = 2001
WE EK 19
LINE A
OR
INT ERNAT IONAL
RE CT IFIER
LOGO
PART NUMBER
IRFU120
56
AS S EMBLY
LOT CODE
78
DAT E CODE
P = DES IGNAT ES LE AD-FREE
PRODUCT (OPT IONAL)
YEAR 1 = 2001
WEEK 19
A = AS S EMBLY S IT E CODE
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/
data/auirfr4104.pdf
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFR/U4104PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
„ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.16mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25Ω, IAS = 42A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
† This value determined from sample failure population. 100%
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
tested to this value in production.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
 Repetitive rating; pulse width limited by
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
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11