Ordering number : ENA1715A EMH1307 P-Channel Power MOSFET http://onsemi.com –20V, –6.5A, 26mΩ, Single EMH8 Features • • • ON-resistance RDS(on)1 : 20mΩ(typ.) 1.8V drive Protection diode in • • Input Capacitance Ciss=1100pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --20 V ±10 V Allowable Power Dissipation ID IDP PD 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) --6.5 A --26 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7045-001 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 5 EMH1307-TL-H Taping Type : TL Marking JG 2.1 1.7 8 TL 1 Lot No. 0.2 4 0.5 0.05 0.75 2.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Electrical Connection 8 7 6 5 1 2 3 4 EMH8 Semiconductor Components Industries, LLC, 2013 July, 2013 62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7 EMH1307 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --20 V --0.4 --1 μA ±10 μA --1.3 8.2 V S 20 26 mΩ 31 44 mΩ 49 78 mΩ 1100 pF 210 pF Crss 160 pF Turn-ON Delay Time td(on) 12.8 ns Rise Time tr 55 ns Turn-OFF Delay Time td(off) 120 ns Fall Time tf 88 ns Total Gate Charge Qg 13 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--6.5A IS=--6.5A, VGS=0V 1.9 nC 3.7 nC --0.8 --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --3A RL=3.33Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω EMH1307 S Ordering Information Device EMH1307-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1715-2/7 EMH1307 ID -- VDS --8 --4 --3 VGS= --1.5V --2 --7 --6 --5 --4 --3 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0A --3.0A 50 40 30 20 10 0 0 --2 --4 --6 --8 --10 Gate-to-Source Voltage, VGS -- V 3 C C 5° --2 = Ta °C 75 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 5 50 5 7 30 20 --1.8 --2.0 --1.6 IT15993 --0.5A 10 --40 --20 0 20 40 60 80 100 120 140 160 IT15995 IS -- VSD VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 3 --1.2 IT15997 f=1MHz 2 Ciss 2 Ciss, Coss, Crss -- pF 3 td(off) 100 tf 7 5 3 tr 2 3 5 7 --0.1 2 3 7 5 3 Coss 2 100 10 2 1000 Crss td(on) 7 --0.01 --1.4 0A = --1. 5V, I D . 2 -= VGS --3.0A ,I = --4.5V D = S VG 40 --0.01 7 5 3 2 --0.001 VDD= --10V VGS= --4.5V 7 Switching Time, SW Time -- ns 3 --1.2 = 8V, I D = --1. VGS IT15996 SW Time -- ID 1000 60 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 25° 5 --1.0 Ambient Temperature, Ta -- °C 10 7 --0.8 70 0 --60 --12 VDS= --10V 2 --0.6 RDS(on) -- Ta IT15994 | yfs | -- ID 3 --0.4 80 ID= --0.5A 60 --0.2 Gate-to-Source Voltage, VGS -- V Ta=25°C 70 0 IT15992 RDS(on) -- VGS 80 0 --1.0 5°C 25° C --25° C 0 25 ° --1 Ta= 7 0 C --2 --1 --2 5°C --1.6V Ta= 75° C --5 VDS= --10V --9 Drain Current, ID -- A Drain Current, ID -- A --6 ID -- VGS --10 Ta=25°C --1.8 V --8.0V --6.0V --4.5V --2.5 V --7 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT15998 7 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT15999 No. A1715-3/7 EMH1307 VGS -- Qg --4.0 3 2 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 8 6 10 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 ASO 5 VDS= --10V ID= --6.5A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 12 14 IT15600 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IDP= --26A (PW≤10μs) 100 1m s ID= --6.5A μs 10m DC Operation in this area is limited by RDS(on). s 100 ope rat ms ion (Ta =2 5°C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT15515 When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15516 No. A1715-4/7 EMH1307 Embossed Taping Specification EMH1307-TL-H No. A1715-5/7 EMH1307 Outline Drawing EMH1307-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1715-6/7 EMH1307 Note on usage : Since the EMH1307 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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