Ordering number : ENA1272B MCH6341 Power MOSFET –30V, 59mΩ, –5A, Single P-Channel http://onsemi.com Features • Low RDS(on) • Pb-free and RoHS Compliance • • 4V drive ESD diode-Protected gate Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --20 A Power Dissipation PD When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7022A-009 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 4 0 to 0.02 1 2 0.3 0.85 1 6 2 5 3 4 YQ TL 3 0.65 Marking LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6341-TL-E MCH6341-TL-H MCH6341-TL-W 0.15 2.1 1.6 0.25 2.0 Electrical Connection 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 1, 2, 5, 6 3 MCPH6 4 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 July, 2014 72814HK TC-00002819/62012TKIM/73008TIIM PE No. A1272-1/5 MCH6341 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Zero-Gate Voltage Drain Current V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS Gate Threshold Voltage Forward Transconductance VGS(th) gFS VDS=--10V, ID=--3A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--3A, VGS=--10V ID=--1.5A, VGS=--4.5V RDS(on)3 ID=--1.5A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Ratings min ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --30 VDS=--10V, ID=--1mA --1.2 2.8 typ Unit max V --1 mA ±10 mA --2.6 4.8 V S 45 59 71 100 82 115 mW mW mW 430 pF 105 pF Crss 75 pF td(on) 7.5 ns Rise Time tr 26 ns Turn-OFF Delay Time td(off) 45 ns Fall Time tf 35 ns Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--5A IS=--5A, VGS=0V 2.0 nC 2.5 nC --0.87 --1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --3A RL=5Ω VIN VOUT D PW=10μs D.C.≤1% G P.G 50Ω MCH6341 S Ordering Information Package Shipping memo MCH6341-TL-E Device MCPH6 3,000pcs./reel Pb Free MCH6341-TL-H MCPH6 3,000pcs./reel Pb Free and Halogen Free MCH6341-TL-W MCPH6 3,000pcs./reel Pb Free and Halogen Free No. A1272-2/5 MCH6341 ID -- VDS --5 --1.5 0 0 --0.1 --0.2 --0.3 --0.5 --0.6 --0.7 --0.8 --0.9 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --3.0A 80 60 40 20 0 10 7 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A C 5° -2 =Ta 2 C 5° 7 C 5° 1.0 2 7 5 3 0.1 --0.01 100 Ta= 7 --2.0 --2.5 --3.0 --3.5 --4.0 IT13380 120 .5A = --1 I D , .0V A = --4 --1.5 VGS I D= , V .5 = --4 0A VGS = --3. V, I D 0 1 -= VGS 100 80 60 40 20 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 IS -- VSD VGS=0V 140 160 IT13382 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 2 --1.5 140 --10 7 5 5 3 --1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 0 --60 --16 IT13381 gFS -- ID VDS= --10V --0.5 160 Ta=25°C 120 ID= --1.5A 0 IT13379 140 100 0 --1.0 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A VDD= --15V VGS= --10V 3 5 7 --10 HD13383 SW Time -- ID --0.4 --0.6 --0.8 --1.0 Forward Diode Voltage, VSD -- V Ciss, Coss, Crss -- VDS 1000 7 7 5 tf 3 tr 10 7 td(on) 5 --1.2 HD13384 f=1MHz Ciss 5 td(off) 2 3 2 Coss 100 Crss 7 5 3 2 --0.1 --0.01 --0.2 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.4 Drain-to-Source Voltage, VDS -- V 160 Forward Transconductance, gFS -- S --1 VGS= --2.5V --0.5 --2 25° --2 C 5°C --2.0 --3 5°C --3.0V --2.5 --4 --25° C --3.0 --1.0 Switching Time, SW Time -- ns Drain Current, ID -- A --3.5 ID -- VGS VDS= --10V Ta=7 5°C 25°C 0V 5V --16.0 --4.0 --6 . --3 --4 . V --10.0V --4.5 Drain Current, ID -- A --6.0 V --4. 5V --5.0 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT13385 3 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT13386 No. A1272-3/5 MCH6341 VGS -- Qg VDS= --15V ID= --5A --9 3 2 --8 --7 --6 --5 --4 --3 --2 --10 7 5 0 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC PD -- Ta 2.0 8 9 10 IT13387 SOA IDP= --20A (PW≤10μs) ID= --5A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --1 0 DC op er ati Operation in this area is limited by RDS(on). 5 7 --0.1 2 3 5 7 --1.0 on (T a= 25 Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) --0.01 --0.01 2 3 10 0μ 1m s s 10 10 ms 0m s 2 3 °C 5 7 --10 Drain-to-Source Voltage, VDS -- V ) 2 3 5 HD13895 When mounted on ceramic substrate (1200mm2×0.8mm) 1.8 Dissipation, PD -- W 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 HD13896 No. A1272-4/5 MCH6341 Outline Drawing MCH6341-TL-E, MCH6341-TL-H, MCH6341-TL-W Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 Note on usage :Since the MCH6341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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