Ordering number : ENA1460B SCH1330 P-Channel Power MOSFET http://onsemi.com –20V, –1.5A, 241mΩ, Single SCH6 Features • • • • • Low ON-resistance Ultrahigh-speed switching 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --20 V ±10 V Allowable Power Dissipation ID IDP PD 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) --1.5 A --6 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7028-002 • Package : SCH6 • JEITA, JEDEC : SOT-563 • Minimum Packing Quantity : 5,000 pcs./reel SCH1330-TL-H 1.6 6 5 4 0.2 Packing Type : TL 1.5 2 3 0.5 TL 0.25 0.56 1 YF LOT No. 0.05 Marking LOT No. 1.6 0.05 0.2 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SCH6 Electrical Connection 1, 2, 5, 6 3 4 Semiconductor Components Industries, LLC, 2013 July, 2013 62712TKIM/O1409 TKIM/42809PE MSIM TC-00001930 No. A1460-1/7 SCH1330 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Conditions Ratings min ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V --20 VDS=--10V, ID=--1mA VDS=--10V, ID=--750mA --0.4 1.14 ID=--750mA, VGS=--4.5V ID=--300mA, VGS=--2.5V ID=--100mA, VGS=--1.8V typ Unit max V --1 μA ±10 μA --1.4 1.9 V S 185 241 mΩ 275 385 mΩ 410 615 mΩ 120 pF 26 pF Crss 20 pF 5.3 ns Rise Time td(on) tr 9.7 ns Turn-OFF Delay Time td(off) 16 ns Fall Time tf 14 ns Total Gate Charge Qg 1.7 nC Gate-to-Source Charge Qgs 0.28 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--1.5A 0.47 IS=--1.5A, VGS=0V --0.89 nC --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --750mA RL=13.3Ω VIN D PW=10μs D.C.≤1% VOUT G SCH1330 P.G 50Ω S Ordering Information Device SCH1330-TL-H Package Shipping memo SCH6 5,000pcs./reel Pb Free and Halogen Free No. A1460-2/7 SCH1330 ID -- VDS V .8 --1.6 VGS= --1.0V --0.4 --0.2 --0.2 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 RDS(on) -- VGS 500 --0.3A 400 --0.75A 300 200 100 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 5 --9 --1.0 --1.5 --2.5 500 I = .8V, D = --1 VGS 400 --0.1A A = --0.3 V, I D 300 --2.5 V GS= 200 = -4.5V, I D V GS= -- 0.75A 100 --40 0 --20 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT14616 140 160 IT14617 IS -- VSD 5 VDS= --10V --3.0 IT14615 600 0 --60 --10 VGS=0V 3 3 2 7 5 3 2 3 2 --0.1 7 5 C C 5° --2 = C Ta 75° 1.0 --1.0 7 5 25°C --25 ° Source Current, IS -- A °C 25 5°C 2 3 2 0.1 7 --0.01 --2.0 RDS(on) -- Ta 700 ID= --0.1A --1 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 0 0 IT14614 600 0 0 --0.9 --1.0 Ta= 7 0 5°C --0.6 --0.4 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.8 Ta= 7 --0.6 --1.0 °C --0.8 --1.2 --2 5 --1.0 --1.4 25 °C V --1.5 --1.2 700 Forward Transfer Admittance, | yfs | -- S Drain Current, ID -- A --2 .5V Drain Current, ID -- A --1.4 Drain-to-Source Voltage, VDS -- V 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A SW Time -- ID 5 7 --1.0 2 --0.01 3 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 3 VDD= --10V VGS= --4.5V 3 0 IT14618 --1.2 IT14619 f=1MHz 2 Ciss 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns VDS= --10V --1.8 --1.6 0 ID -- VGS --2.0 --1 --3 . --1.8 5V --8.0 V --4. 5V --2.0 td (off) tf 10 tr 7 td(on) 5 3 2 --0.1 100 7 5 Coss Crss 3 2 10 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 IT14620 7 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14621 No. A1460-3/7 SCH1330 VGS -- Qg --10 7 5 VDS= --10V ID= --1.5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --0.5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC PD -- Ta 1.2 1.8 2.0 IT14622 10 1m ID= --1.5A DC op m 10 er 0μ s s 10 s 0m ati on 3 2 --1.0 0 PW≤10μs --1.0 7 5 --0.1 7 5 0 Allowable Power Dissipation, PD -- W 3 2 ASO IDP= --6A Operation in this area is limited by RDS(on). s (T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14623 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14624 No. A1460-4/7 SCH1330 Taping Specification SCH1330-TL-H No. A1460-5/7 SCH1330 Outline Drawing SCH1330-TL-H Land Pattern Example Mass (g) Unit 0.004 mm * For reference Unit: mm 1.4 0.4 0.3 0.5 0.5 No. A1460-6/7 SCH1330 Note on usage : Since the SCH1330 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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