Ordering number : ENA0368A 6HP04MH P-Channel Small Single MOSFET http://onsemi.com –60V, –370mA, 4.2Ω Single MCPH3 Features • • • 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Unit --60 V ±20 V --370 mA --1480 mA 0.6 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Drain to Source Breakdown Voltage Symbol Conditions Ratings min V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V --60 VGS(off) | yfs | VDS=--10V, ID=--100μA VDS=--10V, ID=--190mA --1.2 Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID=--190mA, VGS=--10V ID=--100mA, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance VDS=--20V, f=1MHz typ max Unit V --1 μA ±10 μA --2.6 310 V mS 3.1 4.2 Ω 5.1 7.3 Ω 24.1 pF 8.5 pF Reverse Transfer Capacitance Crss 4.1 pF Turn-ON Delay Time td(on) tr 18.4 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--370mA 15.2 ns 113 ns 41 ns 0.84 nC 0.19 nC 0.21 IS=--370mA, VGS=0V --0.92 nC --1.2 V ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2013 December, 2013 D1813 TKIM TC-00003066/51506PE MSIM TB-00002267 No.A0368-1/5 6HP04MH --6 .0 V V --4.5 --4.0V --200 --100 Drain Current, ID -- mA --350 --1 2 VGS= --3V --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain to Source Voltage, VDS -- V --150 --100 --1.6 0 --190mA 10 8 6 4 ID= --100mA 2 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 Gate to Source Voltage, VGS -- V Ta C 25° C 75° 3 2 10 7 5 3 2 --20 0 20 40 60 80 100 120 140 160 IT17339 IS -- VSD VGS=0V --100 7 5 3 2 --10 7 5 3 2 --1 2 --1 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT17340 Drain Current, ID -- mA 0 tr 3 2 --0.8 --1.0 --1.2 IT17341 f=1MHz 5 Ciss, Coss, Crss -- pF td(on) --0.6 7 3 tf --0.4 Ciss, Coss, Crss -- VDS 100 VDD= --30V VGS= --10V td(off) --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 1 --0.1 --40 2 1 10 7 5 90mA --1 , I D= --10V = VGS 4 2 2 = -VGS 6 --1000 7 5 Source Current, IS -- mA °C -25 =- 100 7 5 3 --1 I = 4V, D 3 2 100 7 5 A 00m 8 Ambient Temperature, Ta -- °C 3 2 --5 IT17337 10 IT17338 VDS= --10V --4 12 0 --60 --20 yfs -- ID 1000 7 5 --3 RDS(on) -- Ta 14 Static Drain to Source On-State Resistance, RDS(on) -- Ω 12 --2 Gate to Source Voltage, VGS -- V Ta=25°C 0 --1 IT17336 RDS(on) -- VGS 14 Static Drain to Source On-State Resistance, RDS(on) -- Ω --200 0 --0.2 0 Forward Transfer Admittance, |yfs | -- mS --250 --50 0 Switching Time, SW Time -- ns --300 Ta=7 5°C 25°C --25°C Drain Current, ID -- mA --300 VDS= --10V Ta=7 5°C --25 °C 0. --1 ID -- VGS --400 .0V 0V 25°C ID -- VDS --400 3 Ciss 2 Coss 10 7 5 Crss 3 2 2 3 5 7 --1 2 Drain Current, ID -- A 3 5 7 --10 IT17342 1 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT17343 No.A0368-2/5 6HP04MH VGS -- Qg --10 --10 7 5 3 2 VDS= --30V --8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 IDP= --1480mA (PW≤10μs) ID= --370mA --0.1 7 5 3 2 --0.01 7 5 3 2 --2 --1 0 0 0.8 0.6 0.4 0.2 Total Gate Charge, Qg -- nC 1.0 IT17344 PD -- Ta 0.8 Allowable Power Dissipation, PD -- W --1.0 7 5 3 2 SOA --0.001 --0.01 2 3 100 μ 1m s 10 s m s 10 0m DC s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 5 7--0.1 2 3 5 7 --1 2 3 5 7 --10 Drain to Source Voltage, VDS -- V 2 3 5 7--100 IT17347 When mounted on ceramic substrate (900mm2✕0.8mm) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT17348 No.A0368-3/5 6HP04MH Package Dimensions 6HP04MH-TL-W SC-70FL/MCPH3 CASE 419AQ ISSUE O Unit : mm 1: Gate 2: Source 3: Drain Land Pattern Example 2.1 0.6 0.4 0.65 0.65 Packing Type:TL Ordering & Package Information Shipping memo 6HP04MH-TL-W MCPH3 SC-70, SOT-323 3,000 pcs. / reel Pb-Free and Halogen Free Electrical Connection Marking QV LOT No. Package LOT No. Device TL Switching Time Test Circuit 3 VDD= --30V VIN 0V --10V ID= --190mA RL=1547 VOUT VIN 1 D PWb10Ms D.C.¾b1% G Rg 2 P.G 6HP04MH 507 S Rg=5k7 No.A0368-4/5 6HP04MH Note on usage : Since the 6HP04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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