MMBT2907A ® SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ Type Marking MMBT2907A M29 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE SOT-23 ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Emitter Voltage (I E = 0) -60 V V CEO Collector-Emitter Voltage (I B = 0) -60 V V EBO Emitter-Base Voltage (I C = 0) -5 V A IC Parameter Collector Current -0.6 I CM Collector Peak Current (t p < 5 ms) -0.8 A P tot Total Dissipation at T amb = 25 o C 350 mW T stg Storage Temperature Tj Max. Operating Junction Temperature February 2003 -65 to 150 o C 150 o C 1/4 MMBT2907A THERMAL DATA R thj-amb • Thermal Resistance Junction-Ambient Max o 357.1 C/W • Device mounted on a PCB area of 1 cm 2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEX Collector Cut-off Current (V BE = -3 V) V CE = -30 V -50 nA I BEX Base Cut-off Current (V BE = -3 V) V CE = -30 V -50 nA I CBO Collector Cut-off Current (I E = 0) V CB = -50 V -10 nA V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA -60 V V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) I C = -10 µA -60 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -10 µA -5 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -150 mA I C = -500 mA I B = -15 mA I B = -50 mA -0.4 -1.6 V V V BE(sat) ∗ Collector-Base Saturation Voltage I C = -150 mA I C = -500 mA I B = -15 mA I B = -50 mA -1.3 -2.6 V V DC Current Gain IC IC IC IC IC h FE ∗ fT -0.1 mA -1 mA -10 mA -150 mA -500 mA V CE = -10 V V CE = -10 V V CE = -10 V V CE = -10 V V CE = -10 V 75 100 100 100 50 300 Transition Frequency I C = -50 mA V CE = -20V f = 100MHz C CBO Collector-Base Capacitance IE = 0 V CB = -10 V f = 1 MHz 8 pF C EBO Emitter-Base Capacitance IC = 0 V EB = -2 V f = 1 MHz 30 pF td Delay Time 10 ns tr Rise Time I C = -150 mA V CC = -30V t on Switching On Time ts Storage Time tf Fall Time t off I C = -150 mA V CC = -30V Switching Off Time ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 = = = = = 200 MHz I B = -15 mA I B1 = -I B2 = -15mA 40 ns 45 ns 190 ns 30 220 ns ns MMBT2907A SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 MMBT2907A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4