STN1802 ® LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ Ordering Code Marking STN1802 N1802 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING SOT-223 MEDIUM POWER PACKAGE IN TAPE & REEL APPLICATIONS: CCFL DRIVERS ■ VOLTAGE REGULATORS ■ RELAY DRIVERS ■ HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS 2 1 2 3 SOT-223 ■ DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 60 V V EBO Emitter-Base Voltage (I C = 0) 6 V Collector Current 3 A IC I CM IB Collector Peak Current (t p < 5 ms) 6 A Base Current 1 A P tot Total Dissipation at T amb = 25 o C T stg Storage Temperature Tj March 2003 Max. Operating Junction Temperature 1.6 W -65 to 150 o C 150 o C 1/4 STN1802 THERMAL DATA R thj-amb Thermal Resistance Junction-Ambient Max o 78 C/W • Device mounted on a PCB area of 1 cm . 2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) V CB = 40 V 0.1 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 4 V 0.1 µA V (BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = 10 µA 80 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 1 mA 60 V V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) I E = 10 µA 6 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 A IC = 3 A I B = 100 mA I B = 150 mA 150 200 300 400 mV mV V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A I B = 100 mA 0.9 1.2 V DC Current Gain I C = 100 mA IC = 3 A V CE = 2 V V CE = 2 V Transition frequency V CE = 10 V I C = 50 mA 150 MHz Collector-Base Capacitance V CB = 10 V f = 1 MHz 50 pF IC = 1 A I B1 = - I B2 = 0.1 A V CC = 30 V 50 1.35 120 ns ms ns h FE ∗ fT C CBO t ON ts tf RESISTIVE LOAD Turn- on Time Storage Time Fall Time ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/4 200 100 400 STN1802 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 3/4 STN1802 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4