2N3019 ® SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC P tot T stg Tj Collector Current Total Dissipation at T amb ≤ 25 o C at T C ≤ 25 o C Storage Temperature Max. Operating Junction Temperature September 2002 Value Unit 140 V 80 V 7 V 1 A 0.8 5 W W -65 to 175 o C 175 o C 1/4 2N3019 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 30 187.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit 10 10 nA µA 10 nA Collector Cut-off Current (I E = 0) V CB = 90 V V CB = 90 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA 140 V I C = 10 mA 80 V 7 V V (BR)CBO V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) T C = 150 o C V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 150 mA I C = 500 mA V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 150 mA I B = 15 mA DC Current Gain I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 1A I C = 150 mA T amb = -55 o C V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V h FE ∗ IB = 15 mA IB = 50 mA Small Signal Current Gain I C = 1 mA fT Transition Frequency I C = 50 mA C CBO Collector-Base Capacitance IE = 0 V CB = 10 V C EBO Emitter-Base Capacitance IC = 0 V EB = 0.5 V NF Noise Figure I C = 0.1 mA f = 1KHz V CE = 5 V Feedback Time I C = 10 mA Constant ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 50 90 100 50 15 0.2 0.5 V V 1.1 V 300 40 h fe ∗ r bb’ C b’c 2/4 Min. I CBO f = 1KHz V CE = 10 V f = 20MHz f = 1MHz f = 1MHz V CE = 10 V R g = 1KΩ V CE = 10 V f = 4MHz 80 400 100 MHz 12 pF 60 pF 4 dB 400 ps 2N3019 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 2N3019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4