VISHAY SIZ920DT

New Product
SiZ920DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
RDS(on) () (Max.)
ID (A)
0.0071 at VGS = 10 V
40a
0.0089 at VGS = 4.5 V
40a
0.0030 at VGS = 10 V
40a
0.0035 at VGS = 4.5 V
40a
Qg (Typ.)
10.5 nC
29 nC
PowerPAIR® 6 x 5
Pin 1
G1
1
5 mm
D1
2
D1
D1
3
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
CPU Core Power
Computer Peripherals
POL
Synchronous Buck Converter
D1
S1/D2
Pin 9
S2
8
7
G1
N-Channel 1
MOSFET
4
G2
D1
6 mm
6
S1/D2
G2
5
N-Channel 2
MOSFET
Ordering Information:
SiZ920DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Channel-1
Channel-2
30
± 20
V
40a
40a
40a
40a
22b, c
17b, c
70
28a
32b, c
26b, c
120
A
a
3.6b, c
25
31
39
25
28
4.3b, c
40
80
100
64
4.3b, c
2.8b, c
5.2b, c
3.3b, c
TJ, Tstg
Unit
- 55 to 150
260
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
RthJA
RthJC
Typ.
Max.
Channel-2
Typ.
Max.
Unit
t  10 s
23
29
19
24
Maximum Junction-to-Ambientb, f
°C/W
Maximum Junction-to-Case (Drain)
Steady State
2.5
3.2
1
1.25
Notes:
a. Package limited - TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2.
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th)/TJ
VGS(th) Temperature Coefficient
VGS(th)
Gate Threshold Voltage
IGSS
Gate Source Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
Forward Transconductanceb
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Ch-1
30
VGS = 0 V, ID = 250 µA
Ch-2
30
ID = 250 µA
Ch-1
ID = 250 µA
Ch-2
31
ID = 250 µA
Ch-1
- 5.2
V
34
mV/°C
ID = 250 µA
Ch-2
VDS = VGS, ID = 250 µA
Ch-1
1.2
2.5
VDS = VGS, ID = 250 µA
Ch-2
1
2.2
- 6.1
Ch-1
± 100
Ch-2
± 100
VDS = 30 V, VGS = 0 V
Ch-1
1
VDS = 30 V, VGS = 0 V
Ch-2
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
5
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-2
VDS 5 V, VGS = 10 V
Ch-1
20
VDS 5 V, VGS = 10 V
Ch-2
25
V
nA
µA
5
A
VGS = 10 V, ID = 18.9 A
Ch-1
0.0059 0.0071
VGS = 10 V, ID = 20 A
Ch-2
0.0025 0.0030
VGS = 4.5 V, ID = 16.9 A
Ch-1
0.0074 0.0089
VGS = 4.5 V, ID = 20 A
Ch-2
0.0029 0.0035
VDS = 10 V, ID = 18.9 A
Ch-1
66
VDS = 10 V, ID = 20 A
Ch-2
140
Ch-1
1260
Ch-2
3600
Ch-1
260
Ch-2
660
Ch-1
115

S
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Ciss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Coss
Crss
Qg
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Ch-2
305
VDS = 15 V, VGS = 10 V, ID = 18.9 A
Ch-1
22.3
35
VDS = 15 V, VGS = 10 V, ID = 20 A
Ch-2
60
110
Ch-1
10.5
16
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 18.9 A
Ch-2
29
51
Ch-1
5.1
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Ch-2
10
Ch-1
2.8
Qgs
Qgd
Rg
pF
Ch-2
f = 1 MHz
nC
9.5
Ch-1
0.3
1.6
3.2
Ch-2
0.1
0.6
1.2

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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For technical questions, contact: [email protected]
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
15
23
Ch-2
30
60
Ch-1
18
30
Ch-2
35
70
Ch-1
15
23
Ch-2
35
70
Ch-1
10
20
Unit
Dynamica
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
Fall Time
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
Turn-Off Delay Time
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Ch-2
12
25
Ch-1
4
8
Ch-2
12
25
Ch-1
11
25
Ch-2
12
25
Ch-1
18
30
Ch-2
35
70
Ch-1
8
16
Ch-2
10
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
ISM
VSD
Body Diode Voltage
Body Diode Reverse Recovery Time
40
Ch-2
40
Ch-1
70
Ch-2
Ch-1
0.8
1.2
IS = 10 A, VGS = 0 V
Ch-2
0.8
1.2
Ch-1
17
30
Ch-2
36
70
Ch-1
10
20
Ch-2
36
70
Ch-1
10
Ch-2
20
Ch-1
7
Ch-2
16
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
tb
A
120
IS = 10 A, VGS = 0 V
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
Ch-1
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
70
VGS = 10 V thru 4 V
4
ID - Drain Current (A)
ID - Drain Current (A)
56
42
VGS = 3V
28
3
TC = 25 °C
2
14
1
0
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
TC = 125 °C
TC = - 55 °C
0
2
0.6
Output Characteristics
1.8
2.4
3
Transfer Characteristics
0.0100
1800
0.0085
1350
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.2
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V
0.0070
VGS = 10 V
Ciss
900
450
0.0055
Coss
Crss
0
0.0040
0
14
28
42
ID - Drain Current (A)
56
0
70
5
10
15
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.8
8
VDS = 15 V
6
VDS = 7.5 V
VDS = 24 V
2
0
0
5
10
15
20
Qg - Total Gate Charge (nC)
Gate Charge
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VGS = 10 V
ID = 18.9 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
I D = 18.9 A
4
20
25
1.5
VGS = 4.5 V
1.2
0.9
0.6
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.02
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 18.9 A
TJ = 150 °C
10
TJ = 25 °C
1
0.015
TJ = 125 °C
0.01
TJ = 25 °C
0.005
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100
2.1
80
Power (W)
VGS(th) (V)
1.8
ID = 250 μA
1.5
60
40
1.2
20
0.9
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
0.001
0.01
Threshold Voltage
0.1
Time (s)
1
10
Single Pulse Power
100
Limited by RDS(on)*
100 μs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
65
ID - Drain Current (A)
52
39
Package Limited
26
13
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
50
2.5
40
2.0
30
1.5
Power (W)
Power (W)
Current Derating*
20
10
1.0
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
TA - Ambient Temperature (°C)
150
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
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For technical questions, contact: [email protected]
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
t1
t2
4. Surface Mounted
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
20
VGS = 10 V thru 4 V
16
VGS = 3 V
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
12
TC = 25 °C
8
20
4
0
0
TC = 125 °C
TC = - 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
3.0
0.0
0.5
Output Characteristics
5000
0.0030
4000
VGS = 4.5 V
C - Capacitance (pF)
Ciss
0.0028
0.0026
VGS = 10 V
0.0024
3000
2000
Coss
1000
0.0022
Crss
0
0.0020
0
20
40
60
80
100
0
120
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
30
Capacitance
10
1.8
ID = 20 A
ID = 20 A
VDS = 7.5 V
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
3.0
Transfer Characteristics
0.0032
RDS(on) - On-Resistance (Ω)
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
8
6
VDS = 15 V
VDS = 24 V
4
2
0
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
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8
60
70
1.6
1.4
VGS = 10 V, 4.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.012
100
ID = 20 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.010
TJ = 150 °C
10
TJ = 25 °C
1
0.008
0.006
TJ = 125 °C
0.004
0.002
0.1
TJ = 25 °C
0.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100
2.2
2.0
80
Power (W)
VGS(th) (V)
1.8
1.6
1.4
ID = 250 μA
60
40
1.2
20
1.0
0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
Threshold Voltage
1
Time (s)
10
100
1000
Single Pulse Power
1000
Limited by RDS(on)*
ID - Drain Current (A)
100
100 μs
1 ms
10
10 ms
1
100 ms
1s
10 s
TA = 25 °C
Single Pulse
0.1
DC
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
160
140
80
100
Power (W)
ID - Drain Current (A)
120
80
60
60
40
Package Limited
40
20
20
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
For technical questions, contact: [email protected]
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ920DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 55 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
t1
t2
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63916.
Document Number: 63916
S12-0975-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAIR® 6 x 5 Case Outline
2x
Pin 7
Pin 6
Pin 5
Pin 5
Pin 6
Pin 7
Pin 8
K
L
Pin 8
b
z
L3
A
D
0.10 C
E
E1
D1
K1
Pin #1 Ident
(Optional)
0.10 C
Pin 1
Pin 2
Pin 3
Pin 4
Pin 4
2x
Pin 3
E2
D1
Pin 2
Pin 1
e
TOP SIDE VIEW
BACK SIDE VIEW
0.10 C
A1
A3
b1
A
C
F
0.08 C
F
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.032
A1
0.00
-
0.10
0.000
-
0.004
A3
0.20 REF
0.008 REF
b
0.51 BSC
0.020 BSC
b1
0.25 BSC
0.010 BSC
D
D1
5.00 BSC
3.75
E
3.80
0.197 BSC
3.85
0.148
6.00 BSC
0.150
0.152
0.236 BSC
E1
2.62
2.67
2.72
0.103
0.105
0.107
E2
0.87
0.92
0.97
0.034
0.036
0.038
e
1.27 BSC
0.005 BSC
K
0.45 TYP.
0.018 TYP.
K1
0.66 TYP.
0.026 TYP.
L
0.43 BSC
0.017 BSC
L3
0.23 BSC
0.009 BSC
z
0.34 BSC
0.013 BSC
ECN: C11-1242-Rev. A, 07-Nov-11
DWG: 6005
Revision: 07-Nov-11
1
Document Number: 63656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAIR® 6 x 5
7.080
(0.279)
2.720
(0.107)
8.080
(0.318)
5.820
(0.229)
0.407
(0.016)
0.567
(0.022)
1.960
(0.077)
(0,0)
2.185
(0.086)
2.153
(0.085)
3.260
Pin 1 (0.128)
0.616
(0.024)
3.920
(0.154)
0.970
(0.038)
0.700
(0.028)
1.270
(0.050)
0.407
(0.016)
0.560
(0.022)
Recommended Minimum Pad
Dimensions in mm (inches)
Document Number: 67480
Revision: 13-Jan-11
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000