VISHAY SI4340DDY-T1-GE3

Si4340DDY
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
20
Channel-2
20
RDS(on) ()
0.0085 at VGS = 10 V
0.0115 at VGS = 4.5 V
0.0070 at VGS = 10 V
0.0095 at VGS = 4.5 V
ID (A)a
14.8
12.8
22
18.9
Qg (Typ.)
8.1
8.4
SCHOTTKY PRODUCT SUMMARY
VDS (V)
20
VSD (V) Diode Forward Voltage
0.55 V at 2.5 A
APPLICATIONS
IF (A)
2
SO-14
D1
1
14
S1
D1
2
13
S1
G1
3
12
D2
G2
4
11
D2
S2
5
10
D2
S2
6
9
D2
S2
7
8
D2
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• DC/DC Converters, Synchronous Buck Converters
- Game Stations
- Notebook PC Logic
D1
D2
Schottky Diode
G1
G2
S1
Top View
S2
N-Channel 1
MOSFET
Ordering Information: Si4340DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
14.8
22
11.8
17.6
12.1b, c
16.3b, c
TA = 25 °C
ID
b, c
IDM
Single Pulse Avalanche Current
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
2.5
4.5
1.7b, c
2.5b, c
IAS
15
EAS
11.25
5.4
1.9
3.5
2b, c
3b, c
1.3b, c
1.9b, c
TJ, Tstg
A
mJ
3
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
13b, c
60
9.7
50
TC = 25 °C
Unit
V
± 20
TC = 25 °C
Pulsed Drain Current (t = 300 µs)
Single Pulse Avalanche Energy
Channel-2
20
TC = 70 °C
TA = 70 °C
Source-Drain Current Diode Current
Channel-1
W
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ.
Max.
53
62.5
t  10 s
RthJA
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
35
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W.
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
42
Channel-2
Typ.
Max.
35
42
18
23
Unit
°C/W
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Ch-1
20
VGS = 0 V, ID = 250 µA
Ch-2
20
ID = 250 µA
Ch-1
20
ID = 25 mA
Ch-2
22
ID = 250 µA
Ch-1
- 4.4
V
mV/°C
ID = 25 mA
Ch-2
VDS = VGS, ID = 250 µA
Ch-1
1
2.5
VDS = VGS, ID = 250 µA
Ch-2
1
2.5
VDS = 0 V, VGS = ± 20 V
Ch-1
100
VDS = 0 V, VGS = ± 20 V
Ch-2
100
VDS = 20 V, VGS = 0 V
Ch-1
1
VDS = 20 V, VGS = 0 V
Ch-2
100
VDS = 20 V, VGS = 0 V, TJ = 85 °C
Ch-1
15
- 4.6
VDS = 20 V, VGS = 0 V, TJ = 85 °C
Ch-2
VDS 5 V, VGS = 10 V
Ch-1
20
VDS 5 V, VGS = 10 V
Ch-2
30
VGS = 10 V, ID = 11.5 A
Ch-1
0.0065 0.0085
VGS = 10 V, ID = 15.2 A
Ch-2
0.0060 0.0070
VGS = 4.5 V, ID = 10 A
Ch-1
0.0091 0.0115
0.0077 0.0095
V
nA
µA
10 000
A
VGS = 4.5 V, ID = 14 A
Ch-2
VDS = 10 V, ID = 11.5 A
Ch-1
28
VDS = 10 V, ID = 15.2 A
Ch-2
44
Ch-1
862
Ch-2
956
Ch-1
280
Ch-2
363
Ch-1
116

S
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Ciss
Channel-1
VDS = 10 V, VGS = 0 V, f = 1 MHz
Coss
Crss
Qg
Channel-2
VDS = 10 V, VGS = 0 V, f = 1 MHz
Ch-2
120
VDS = 10 V, VGS = 10 V, ID = 12 A
Ch-1
17.4
VDS = 10 V, VGS = 10 V, ID = 12 A
Ch-2
17.8
27
Ch-1
8.1
12.5
12.5
Channel-1
VDS = 10 V, VGS = 4.5 V, ID = 12 A
Ch-2
8.4
Ch-1
2.2
Channel-2
VDS = 10 V, VGS = 4.5 V, ID = 12 A
Ch-2
2.6
Ch-1
2.4
Ch-2
2.5
Qgs
Qgd
Rg
pF
f = 1 MHz
26
Ch-1
2.2
4.4
Ch-2
2.6
5.2
nC

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
18
35
Ch-2
20
40
Ch-1
37
70
Ch-2
34
65
Ch-1
19
35
Ch-2
21
40
Ch-1
10
20
Ch-2
10
20
Ch-1
9
18
Ch-2
9
18
Ch-1
13
26
Ch-2
13
26
Ch-1
16
32
Ch-2
15
30
Ch-1
8
16
Ch-2
8
16
Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
td(on)
tr
Channel-1
VDD = 10 V, RL = 1 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-2
VDD = 10 V, RL = 1 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-1
VDD = 10 V, RL = 1 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
Channel-2
VDD = 10 V, RL = 1 
ID  10 A, VGEN = 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
VSD
Ch-1
2.5
Ch-2
4.5
Ch-1
50
Ch-2
60
IS = 5 A
Ch-1
0.76
1.2
IS = 2.5 A
Ch-2
0.43
0.55
Ch-1
18
36
Ch-2
18
36
Ch-1
7
14
Ch-2
7
14
trr
Body Diode Reverse Recovery Charge
Qrr
Channel-1
IF = 9.2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
Channel-2
IF = 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
A
Ch-1
8
Ch-2
10
Ch-1
9
Ch-2
9
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
VGS = 3 V
20
10
6
TC = 25 °C
4
2
T = 125 °C
C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.8
1.6
2.4
3.2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.014
1200
0.012
960
0.010
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0
VGS = 4.5 V
0.008
0.006
4.0
Ciss
720
480
Coss
240
VGS = 10 V
Crss
0
0.004
0
10
20
30
40
0
50
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
20
1.6
ID = 12 A
VGS = 10 V
ID = 11.5 A
8
1.4
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
4
VDS = 10 V
6
VDS = 5 V
VDS = 15 V
4
1.2
VGS = 4.5 V
1.0
0.8
2
0
0
4
8
12
Qg - Total Gate Charge (nC)
Gate Charge
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4
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.030
10
0.024
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 11.5 A
TJ = 150 °C
TJ = 25 °C
1
0.1
0.012
TJ = 125 °C
TJ = 25 °C
0.006
0.01
0.001
0.0
0.018
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
0.2
40
0
Power (W)
VGS(th) - Variance (V)
4
ID = 5 mA
- 0.2
30
20
ID = 250 μA
- 0.4
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
100
IDM Limited
ID - Drain Current (A)
10
ID Limited
100 μs
1 ms
1
10 ms
Limited by RDS(on)*
100 ms
1s
10 s
DC
0.1
TC = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
ID - Drain Current (A)
12
9
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
3.5
1.5
2.8
1.2
2.1
0.9
Power (W)
Power (W)
Current Derating*
1.4
0.7
0.6
0.3
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
60
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
48
36
24
VGS = 3 V
6
TC = 25 °C
4
2
12
TC = 125 °C
VGS = 2 V
0
0
0.5
1.0
1.5
2.0
0.0
2.5
1.0
2.0
3.0
4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.010
1500
0.009
1200
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.0
TC = - 55 °C
VGS = 4.5 V
0.008
0.007
0.006
5.0
Ciss
900
600
Coss
300
VGS = 10 V
Crss
0.005
0
0
12
24
36
48
0
60
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
1.6
10
VGS = 10 V
ID = 15.2 A
ID = 12 A
1.4
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
VDS = 10 V
6
VDS = 5 V
VDS = 15 V
4
1.2
VGS = 4.5 V
1.0
0.8
2
0
0
4
8
12
Qg - Total Gate Charge (nC)
Gate Charge
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16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.030
ID = 15.2 A
0.024
TJ = 150 °C
1
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
0.1
0.01
0.018
TJ = 125 °C
0.012
0.006
0.001
TJ = 25 °C
0.000
0.0
0.2
0.4
0.6
0.8
0
1.0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
80
1.E-01
1.E-02
1.E-03
20V
1.E-04
Power (W)
IR - Reverse Current (A)
64
16V
1.E-05
48
32
1.E-06
16
1.E-07
1.E-08
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Reverse Current vs. Junction Temperature
100
IDM Limited
ID - Drain Current (A)
10
ID Limited
100 μs
1 ms
10 ms
1
100 ms
Limited by RDS(on)*
1s
10 s
0.1
DC
TC = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
ID - Drain Current (A)
20
Package Limited
15
10
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
6.5
2.0
5.2
1.6
3.9
1.2
Power (W)
Power (W)
Current Derating*
2.6
0.8
0.4
1.3
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 87 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67583.
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
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This document is subject to change without notice.
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Package Information
Vishay Siliconix
SOIC (NARROW): 14ĆLEAD
MILLIMETERS
14
13
12
11
10
9
Dim
A
A1
B
C
D
E
e
H
L
Ø
8
E
2
3
4
5
6
7
D
A
0.25
(GAGE PLANE)
1
H
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
8.55
8.75
0.336
0.344
3.8
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: T-05766—Rev. F, 19-Sep-05
DWG: 5499
C
ALL LEADS
0.101 mm
e
B
Document Number: 71193
19-Sep-05
A1
L
Ø
0.004″
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-14
RECOMMENDED MINIMUM PADS FOR SO-14
0.322
(8.179)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72607
Revision: 21-Jan-08
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23
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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