CSD25303W1015 www.ti.com SLPS292 – JANUARY 2011 P-Channel NexFET™ Power MOSFET Check for Samples: CSD25303W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint Low Profile 0.62mm Height Pb Free RoHS Compliant Halogen Free CSP 1 × 1.5 mm Wafer Level Package TA = 25°C unless otherwise stated UNIT Drain to Source Voltage –20 V Qg Gate Charge Total (4.5V) 3.3 nC Qgd Gate Charge Gate to Drain RDS(on) 0.6 Drain to Source On Resistance VGS(th) nC VGS = –1.8V 72 mΩ VGS = –2.5V 56 mΩ VGS = –4.5V 46 mΩ Voltage Threshold APPLICATIONS • • • TYPICAL VALUE VDS –0.65 V ORDERING INFORMATION Battery Management Load Switch Battery Protection Device Package CSD25303W1015 1 × 1.5 Wafer Level Package DESCRIPTION Media 7-inch reel Qty Ship 3000 Tape and Reel ABSOLUTE MAXIMUM RATINGS The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View D D S S S G TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage ±8 V ID Continuous Drain Current, TC = 25°C(1) –3 A IDM Pulsed Drain Current, TA = 25°C(2) –9 A PD Power Dissipation(1) 1.5 W TSTG Storage Temperature Range TJ, Operating Junction Temperature Range –55 to 150 °C (1) Typical RqJA = 90°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤1ms, duty cycle ≤2% P0099-01 RDS(ON) vs VGS Gate Charge 5 ID = −1.5A 180 − VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance - mΩ 200 160 140 120 100 80 60 40 TC = 25°C TC = 125ºC 20 0 0 1 2 3 4 − VGS - Gate-to- Source Voltage - V 5 6 ID = −1.5A VDD = −10V 4 3 2 1 0 0 1 2 3 4 Qg - Gate Charge - nC (nC) 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011, Texas Instruments Incorporated CSD25303W1015 SLPS292 – JANUARY 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = –250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = –16V IGSS Gate to Source Leakage Current VDS = 0V, VGS = ±8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = –250mA RDS(on) Drain to Source On Resistance gfs Transconductance –20 –0.4 V –1 mA –100 nA –0.65 –1 V VGS = –1.8V, ID = –1.5A 72 92 mΩ VGS = –2.5V, ID = –1.5A 56 71 mΩ VGS = –4.5V, ID = –1.5A 46 58 mΩ VDS = –10V, ID = –1.5A 9.6 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VGS = 0V, VDS = –10V, f = 1MHz Rg 335 435 pF 149 191 pF 50 65 pF 0.6 1.2 Ω 4.3 nC Qg Gate Charge Total (–4.5V) 3.3 Qgd Gate Charge Gate to Drain 0.6 nC Qgs Gate Charge Gate to Source 0.6 nC Qg(th) Gate Charge at Vth 0.3 nC QOSS Output Charge 2.5 nC td(on) Turn On Delay Time 3.9 ns tr Rise Time 8.6 ns td(off) Turn Off Delay Time 11.3 ns tf Fall Time 7.8 ns VDS = –10V, ID = –1.5A VDS = –11V, VGS = 0V VDS = –10V, VGS = –4.5V, ID = –1.5A RG = 4Ω Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time IS = –1.5A, VGS = 0V –0.72 Vdd= –11V, IF = –1.5A, di/dt = 200A/ms –1 V 3.6 nC 11.3 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER R qJA 2 MAX UNIT Thermal Resistance Junction to Ambient (Minimum Cu area) 198 °C/W Thermal Resistance Junction to Ambient (1 in2 Cu area) 112 °C/W Submit Documentation Feedback MIN TYP Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD25303W1015 CSD25303W1015 www.ti.com SLPS292 – JANUARY 2011 P-Chan 1.0x1.5 CSP TTA MAX Rev1 P-Chan 1.0x1.5 CSP TTA MIN Rev1 Max RqJA = 198°C/W when mounted on minimum pad area of 2 oz. Cu. Max RqJA = 112°C/W when mounted on 1 inch2 of 2 oz. Cu. M0155-01 M0156-01 TYPICAL MOSFET CHARACTERISTICS ZqJA - Normalized Thermal Impedance (TA = 25°C unless otherwise stated) 0.5 0.3 Duty Cycle = t1/t2 0.1 0.05 P 0.02 0.01 t1 t2 Typical RqJA = 158°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA Single Pulse tp - Pulse Duration - s G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD25303W1015 3 CSD25303W1015 SLPS292 – JANUARY 2011 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) 9 9 8 8 − IDS - Drain-to-Source Current - A − IDS - Drain-to-Source Current - A (TA = 25°C unless otherwise stated) 7 6 5 4 3 VGS = −1.8V VGS = −2.0V VGS = −2.5V VGS = −3.5V VGS = −4.5V 2 1 0 0 0.5 1 1.5 VDS = −5V 7 6 5 4 3 2 TC = 125°C TC = 25°C TC = −55°C 1 0 0.5 2 1 − VDS - Drain-to-Source Voltage - V Figure 2. Saturation Characteristics Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 4 C − Capacitance − nF − VGS - Gate-to-Source Voltage (V) 10 ID = −1.5A VDD = −10V 3 2 1 0.1 1 0 0 1 2 3 0.01 4 0 5 10 15 20 − VDS - Drain-to-Source Voltage - V Qg - Gate Charge - nC (nC) Figure 4. Gate Charge Figure 5. Capacitance 1 200 RDS(on) - On-State Resistance - mΩ ID = −250µA − VGS(th) - Threshold Voltage - V 2 Figure 3. Transfer Characteristics 5 0.8 0.6 0.4 0.2 0 −75 −25 25 75 125 175 ID = −1.5A 180 160 140 120 100 80 60 40 TC = 25°C TC = 125ºC 20 0 0 1 Figure 6. Threshold Voltage vs. Temperature 2 3 4 5 6 − VGS - Gate-to- Source Voltage - V TC - Case Temperature - ºC 4 1.5 − VGS - Gate-to-Source Voltage - V Figure 7. On Resistance vs. Gate Voltage Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD25303W1015 CSD25303W1015 www.ti.com SLPS292 – JANUARY 2011 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 1.4 10 ID = −1.5A VGS = −4.5V − ISD − Source-to-Drain Current - A Normalized On-State Resistance 1.6 1.2 1 0.8 0.6 0.4 −75 −25 25 75 125 175 TC = 25°C TC = 125°C 1 0.1 0.01 0.001 0.0001 0 0.2 Figure 8. On Resistance vs. Temperature 0.6 0.8 1 Figure 9. Typical Diode Forward Voltage 100 4.0 − IDS - Drain- to- Source Current - A − IDS - Drain-to-Source Current - A 0.4 − VSD − Source-to-Drain Voltage - V TC - Case Temperature - ºC 10 1 1ms 10ms 100ms 1s DC 0.1 0.01 Single Pulse, Min Cu Area Typical RthJA = 158ºC/W 0.001 0.01 0.1 1 10 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 −50 −25 − VDS - Drain-to-Source Voltage - V Figure 10. Maximum Safe Operating Area 0 25 50 75 100 125 150 175 TC - Case Temperature - ºC Figure 11. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD25303W1015 5 CSD25303W1015 SLPS292 – JANUARY 2011 www.ti.com MECHANICAL DATA CSD25303W1015 Package Dimensions Pin 1 Mark 1 Solder Ball Ø 0.31 ±0.075 2 1 A B 1.50 B 1.00 +0.00 –0.10 0.50 A 2 Pin 1 Mark C C 1.00 +0.00 –0.10 0.50 Side View Bottom View 0.04 0.62 Max 0.38 Top View 0.62 Max Seating Plate Front View M0157-01 NOTE: All dimensions are in mm (unless otherwise specified) Pinout 6 POSITION DESIGNATION C1, C2 Drain A1 Gate A2, B1, B2 Source Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD25303W1015 CSD25303W1015 www.ti.com SLPS292 – JANUARY 2011 Land Pattern Recommendation Ø 0.25 1 2 1.00 0.50 A B C 0.50 M0158-01 NOTE: All dimensions are in mm (unless otherwise specified) Tape and Reel Information 4.00 ±0.10 Ø 1.50 ±0.10 4.00 ±0.10 Ø 0.60 0.86 ±0.05 +0.05 –0.10 1.65 ±0.05 2° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 2.00 ±0.05 0.254 ±0.02 1.19 ±0.05 2° Max M0159-01 NOTE: All dimensions are in mm (unless otherwise specified) Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD25303W1015 7 PACKAGE OPTION ADDENDUM www.ti.com 14-Mar-2011 PACKAGING INFORMATION Orderable Device CSD25303W1015 Status (1) ACTIVE Package Type Package Drawing DSBGA YZC Pins Package Qty 6 3000 Eco Plan (2) Green (RoHS & no Sb/Br) Lead/ Ball Finish SNAGCU MSL Peak Temp (3) Samples (Requires Login) Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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