CSD16327Q3 SLPS371 – DECEMBER 2011 www.ti.com N-Channel NexFET™ Power MOSFET Check for Samples: CSD16327Q3 FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 3.3mm x 3.3mm Plastic Package VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 6.2 nC Qgd Gate Charge Gate to Drain RDS(on) • 2 7 D S 3 6 D V Package Media CSD16327Q3 SON 3.3 × 3.3 Plastic Package 13-inch reel Qty Ship 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS Top View S 4 3.4 1.2 TA = 25°C unless otherwise stated The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. D Threshold Voltage Device VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 60 A Continuous Drain Current(1) 21 A Pulsed Drain Current, TA = 25°C(2) 112 A ID 8 VGS = 4.5V mΩ ORDERING INFORMATION DESCRIPTION 1 Drain to Source On Resistance Vth Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems Optimized for Control or Synchronous FET Applications S nC 5 VGS = 8V APPLICATIONS • 1.1 VGS = 3V IDM (1) PD Power Dissipation 3 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 50A, L = 0.1mH, RG = 25Ω 125 mJ (1) RθJA = 45°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300μs, duty cycle ≤2% D G 5 4 D P0095-01 RDS(ON) vs VGS Gate Charge 10 ID = 24A VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance - mΩ 14 12 10 8 6 4 2 0 TC = 25°C TC = 125ºC 0 1 2 3 4 5 6 7 VGS - Gate-to- Source Voltage - V 8 9 10 G001 ID =24A VDD = 12.5V 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 Qg - Gate Charge - nC (nC) 12 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011, Texas Instruments Incorporated CSD16327Q3 SLPS371 – DECEMBER 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250μA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 20V IGSS Gate to Source Leakage Current VDS = 0V, VGS = +10/-8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 25 0.9 VGS = 3V, ID = 24A RDS(on) gfs Drain to Source On Resistance VGS = 4.5V, ID = 24A Transconductance V 1 μA 100 nA 1.2 1.4 V 5 6.5 mΩ 4 4.8 VGS = 8V, ID = 24A 3.4 4 VDS = 12.5V, ID = 24A 96 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance 1020 1300 pF 740 960 CRSS pF Reverse Transfer Capacitance 50 65 pF Rg Series Gate Resistance 1.4 2.8 Ω Qg Gate Charge Total (4.5V) 6.2 8.4 nC Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = 12.5V, f = 1MHz VDS = 12.5V, ID = 24A VDS = 12.5V, VGS = 0V VDS = 12.5V, VGS = 4.5V ID = 24A RG = 2Ω 1.1 nC 1.8 nC 1 nC 14 nC 5.3 ns 15 ns 13 ns 6.3 ns Diode Characteristics VSD Diode Forward Voltage IS = 24A, VGS = 0V Qrr Reverse Recovery Charge VDD = 12.5V, IF = 24A, di/dt = 300A/μs 0.85 21 1 nC V trr Reverse Recovery Time VDD = 12.5V, IF = 24A, di/dt = 300A/μs 16 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER RθJC RθJA (1) (2) 2 Thermal Resistance Junction to Case (1) Thermal Resistance Junction to Ambient (1) (2) MIN TYP MAX UNIT 1.7 °C/W 56 °C/W RqJC is determined with the device mounted on a 1-inch2 (6.45-cm2), Cu pad on a 1.5-inch × 1.5-inch thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 2-oz.Cu. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD16327Q3 CSD16327Q3 SLPS371 – DECEMBER 2011 www.ti.com GATE GATE Source Source Max RθJA = 179°C/W when mounted on minimum pad area of 2 oz. Cu. Max RθJA = 56°C/W when mounted on 1 inch2 of 2 oz. Cu. DRAIN DRAIN M0161-02 M0161-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD16327Q3 3 CSD16327Q3 SLPS371 – DECEMBER 2011 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 60 100 IDS - Drain-to-Source Current - A IDS - Drain-to-Source Current - A VDS = 5V 50 40 30 VGS =8.0V VGS =4.5V VGS =3.5V VGS =2.5V VGS =2.0V 20 10 0 0 0.5 1 1.5 1 0.1 TC = 125°C TC = 25°C TC = −55°C 0.01 0.001 2 VDS - Drain-to-Source Voltage - V 10 1 1.5 Figure 2. Saturation Characteristics G001 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 8 C − Capacitance − nF VGS - Gate-to-Source Voltage (V) 3 100 ID =24A VDD = 12.5V 9 7 6 5 4 3 2 10 1 0.1 1 0 0 2 4 6 8 10 0.01 12 Qg - Gate Charge - nC (nC) 0 5 10 15 20 VDS - Drain-to-Source Voltage - V G001 Figure 4. Gate Charge G001 Figure 5. Capacitance 2.1 14 RDS(on) - On-State Resistance - mΩ ID = 250µA VGS(th) - Threshold Voltage - V 2.5 Figure 3. Transfer Characteristics 10 1.8 1.5 1.2 0.9 0.6 0.3 0 −75 −25 25 75 125 TC - Case Temperature - ºC 175 ID = 24A 12 10 8 6 4 2 0 TC = 25°C TC = 125ºC 0 1 2 3 4 5 6 7 8 9 VGS - Gate-to- Source Voltage - V G001 Figure 6. Threshold Voltage vs. Temperature 4 2 VGS - Gate-to-Source Voltage - V G001 10 G001 Figure 7. On Resistance vs. Gate Voltage Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD16327Q3 CSD16327Q3 SLPS371 – DECEMBER 2011 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 1.6 100 ID =24A VGS = 4.5V ISD − Source-to-Drain Current - A Normalized On-State Resistance 1.8 1.4 1.2 1 0.8 0.6 0.4 0.2 −75 −25 25 75 125 TC - Case Temperature - ºC 1 0.1 0.01 0.001 0.0001 175 TC = 25°C TC = 125°C 10 0 0.6 0.8 1 G001 Figure 9. Typical Diode Forward Voltage 100 1ms 10ms 100ms 1s DC I(AV) - Peak Avalanche Current - A 2400 1000 IDS - Drain-to-Source Current - A 0.4 VSD − Source-to-Drain Voltage - V Figure 8. Normalized On Resistance vs. Temperature 100 10 1 0.1 0.01 0.2 G001 Single Pulse Typical RthetaJA = 143ºC/W(min Cu) 0.001 0.01 0.1 1 10 10 5 0.01 100 200 VDS - Drain-to-Source Voltage - V TC = 125°C TC = 25°C 0.1 1 t(AV) - Time in Avalanche - ms G001 Figure 10. Maximum Safe Operating Area 10 G001 Figure 11. Single Pulse Unclamped Inductive Switching − IDS - Drain- to- Source Current - A 80.0 70.0 60.0 50.0 40.0 30.0 20.0 10.0 0.0 −50 −25 0 25 50 75 100 125 TC - Case Temperature - ºC 150 175 G001 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD16327Q3 5 CSD16327Q3 SLPS371 – DECEMBER 2011 www.ti.com MECHANICAL DATA Q3 Package Dimensions D2 D H L 1 2 7 3 6 4 5 5 4 3 b E2 E 6 e E 7 2 8 8 1 q L1 Top View A1 Bottom View A Side View c D Front View M0142-01 DIM MILLIMETERS MIN NOM MAX MIN NOM MAX A 0.950 1.000 1.100 0.037 0.039 0.043 A1 0.000 0.000 0.050 0.000 0.000 0.002 b 0.280 0.340 0.400 0.011 0.013 0.016 c 0.150 0.200 0.250 0.006 0.008 0.010 D 3.200 3.300 3.400 0.126 0.130 0.134 D1 – – – – – – D2 1.650 1.750 1.800 0.065 0.069 0.071 E 3.200 3.300 3.400 0.126 0.130 0.134 E1 – – – – – – E2 2.350 2.450 2.550 0.093 0.096 0.100 e 6 INCHES 0.650 TYP 0.026 H 0.35 0.450 0.550 0.014 0.018 0.022 L 0.35 0.450 0.550 0.014 0.018 0.022 L1 – – – – – – θ – – – – – – Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD16327Q3 CSD16327Q3 SLPS371 – DECEMBER 2011 www.ti.com 2.31 1 8 8 1 0.65 Typ. 2.45 5 4 5 3.50 0.56 0.41 4 0.50 Typ. Recommended PCB Pattern 0.63 M0143-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. 1.75 ±0.10 Q3 Tape and Reel Information 4.00 ±0.10 (See Note 1) Ø 1.50 +0.10 –0.00 3.60 1.30 3.60 5.50 ±0.05 12.00 +0.30 –0.10 8.00 ±0.10 2.00 ±0.05 M0144-01 Notes: 1. 10 sprocket hole pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm 3. Material:black static dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. Thickness: 0.30 ±0.05mm 6. MSL1 260°C (IR and Convection) PbF Reflow Compatible Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD16327Q3 7 PACKAGE OPTION ADDENDUM www.ti.com 28-Dec-2011 PACKAGING INFORMATION Orderable Device CSD16327Q3 Status (1) ACTIVE Package Type Package Drawing SON DQG Pins Package Qty 8 2500 Eco Plan (2) Pb-Free (RoHS Exempt) Lead/ Ball Finish CU SN MSL Peak Temp (3) Samples (Requires Login) Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 27-Dec-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD16327Q3 Package Package Pins Type Drawing SON DQG 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.8 Pack Materials-Page 1 3.6 B0 (mm) K0 (mm) P1 (mm) 3.6 1.2 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 27-Dec-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD16327Q3 SON DQG 8 2500 335.0 335.0 32.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. 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