TI TPS62590TDRVRQ1

TPS62590-Q1
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SLVSAO5A – DECEMBER 2010 – REVISED APRIL 2012
1-A Step-Down Converter in 2-mm × 2-mm QFN Package
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FEATURES
DESCRIPTION
•
•
•
•
•
•
•
The TPS62590-Q1 device is a high-efficiency
synchronous step-down converter, optimized for
battery-powered portable applications. It provides up
to 1000-mA output current from batteries, such as
single Li-Ion or other common-chemistry AA and AAA
cells.
1
•
Qualified for Automotive Applications
Output Current up to 1000 mA
Input Voltage Range from 2.5 V to 6 V
Output Voltage Accuracy in PWM mode ±2.5%
Typ. 15-μA Quiescent Current
100% Duty Cycle for Lowest Dropout
Available in a 2-mm × 2-mm × 0,8-mm QFN
Package
For Improved Features Set, See TPS62290
With an input voltage range of 2.5 V to 6 V, the
device is targeted to power a large variety of portable
handheld equipment or POL applications.
The TPS62590-Q1 family operates at a 2.25-MHz
fixed switching frequency and enters a power-save
mode at light load currents to maintain a high
efficiency over the entire load current range.
The power-save mode is optimized for low outputvoltage ripple. For low-noise applications, the device
can be forced into fixed-frequency PWM mode by
pulling the MODE pin high. In the shutdown mode,
the current consumption is reduced to less than 1 µA.
The TPS62590-Q1 allows the use of small inductors
and capacitors to achieve a small solution size.
The TPS62590-Q1 is available in a 2-mm × 2-mm 6pin QFN package.
Empty para
2.5 V to 5.5 V
4
CIN
10mF
2
VIN
SW
1
EN
FB
3
GND
6
100
L
2.2 mH
R1
C1
COUT
R2
10mF
VI = 5 V
80
0.75 V to VIN
22pF
MODE
PwrPAD
90
VOUT
Efficiency - %
TPS62590DRV
5
VI N
VI = 4.2 V
70
60
VI = 3.8 V
50
40
30
VOUT = 3.3 V,
MODE = GND,
20
10
Typical Application
0
0.0001
0.001
0.01
0.1
IO - Output Current - A
1
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2012, Texas Instruments Incorporated
TPS62590-Q1
SLVSAO5A – DECEMBER 2010 – REVISED APRIL 2012
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Table 1. ORDERING INFORMATION (1)
TA
PACKAGE
–40°C to 105°C
(1)
(2)
QFN 2-mm × 2-mm
(2)
Reel of 3000
ORDERABLE PART NUMBER
TOP-SIDE MARKING
TPS62590TDRVRQ1
QWT
The DRV (2-mm × 2-mm 6-terminal QFN) packages are available in tape on reel.
For the most-current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted) (1)
Input voltage range (2)
VI
Voltage range at EN, MODE
Voltage on SW
Peak output current
VALUE
UNIT
–0.3 to 7
V
–0.3 to VIN +0.3, ≤ 7
V
–0.3 to 7
V
Internally limited
A
TJ
Maximum operating junction temperature
–40 to 125
°C
Tstg
Storage temperature range
–65 to 150
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
THERMAL INFORMATION
TPS62590-Q1
THERMAL METRIC (1)
DRV
UNIT
6 PINS
θJA
Junction-to-ambient thermal resistance (2)
101.4
°C/W
θJCtop
Junction-to-case (top) thermal resistance (3)
80.9
°C/W
θJB
Junction-to-board thermal resistance (4)
71.3
°C/W
(5)
ψJT
Junction-to-top characterization parameter
2.3
°C/W
ψJB
Junction-to-board characterization parameter (6)
71.6
°C/W
θJCbot
Junction-to-case (bottom) thermal resistance (7)
43.8
°C/W
(1)
(2)
(3)
(4)
(5)
(6)
(7)
2
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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RECOMMENDED OPERATING CONDITIONS
MIN
VIN
Supply voltage
NOM
MAX
UNIT
2.5
6
Output voltage range for adjustable voltage
0.75
VIN
V
TA
Operating ambient temperature
–40
105
°C
TJ
Operating junction temperature
–40
125
°C
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ELECTRICAL CHARACTERISTICS
Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply
for condition VIN = EN = 3.6 V. External components CIN = 10 μF 0603, COUT = 10 μF 0603, L = 2.2 μH; see parameter
measurement information.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
VI
Input voltage range
IO
Output current (1)
IQ
Operating quiescent current
ISD
Shutdown current
UVLO
Undervoltage lockout threshold
2.5
6
VIN 2.7 V to 6 V
1000
VIN 2.5 V to 2.7 V
600
V
mA
IO = 0 mA, PFM mode enabled
(MODE = GND) device not switching,
See (2)
15
μA
IO = 0 mA, switching with no load
(MODE = VIN) PWM mode,
VO = 1.8 V, VIN = 3 V
3.8
mA
0.5
μA
EN = GND
Falling
1.85
Rising
1.95
V
ENABLE, MODE
VIH
High-level input voltage, EN,
MODE
2.5 V ≤ VIN ≤ 6 V
1
VIN
VIL
Low-level input voltage, EN,
MODE
2.5 V ≤ VIN ≤ 6 V
0
0.4
II
Input bias current, EN, MODE
EN, MODE = GND or VIN
0.01
1
V
V
μA
POWER SWITCH
High-side MOSFET on-resistance
rDS(on)
Low-side MOSFET on-resistance
ILIMF
TSD
250
VIN = VGS = 3.6 V, TA = 25°C
mΩ
190
Forward current limit MOSFET
high-side and low-side
VIN = VGS = 3.6 V, TA = 25°C
Thermal shutdown
Increasing junction temperature
140
Thermal shutdown hysteresis
Decreasing junction temperature
20
1.19
1.4
1.78
A
°C
OSCILLATOR
fSW
Oscillator frequency
2.5 V ≤ VIN ≤ 6 V
2.25
MHz
OUTPUT
VO
Adjustable output voltage range
Vref
Reference voltage
0.75
VI
600
VFB(PWM)
Feedback voltage
MODE = VIN, PWM mode,
2.5 V ≤ VIN ≤ 6 V, See (3)
VFB(PFM)
Feedback voltage, PFM mode
MODE = GND, device in PFM mode,
1% voltage positioning active, See (2)
Load regulation
–2.5%
0%
Start-up time
tRamp
VO ramp-up time
Time to ramp from 5% to 95% of VO
250
Leakage current into SW pin
VI = 3.6 V, VI = VO = VSW, EN = GND,
See (4)
0.1
4
2.5%
–1
tStart Up
(1)
(2)
(3)
(4)
mV
1%
Time from active EN to reach 95% of
VO
Ilkg
V
500
%/A
μs
μs
1
μA
Not production tested.
In PFM mode, the internal reference voltage is set to typ. 1.01 × Vref . See the parameter measurement information.
For VIN = VO + 1 V
In fixed output-voltage versions, the internal resistor divider network is disconnected from the FB pin.
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PIN ASSIGNMENTS
DRV PACKAGE
(TOP VIEW)
SW
MODE
FB
1
2
3
D 6
PA 5
r
we
4
Po
GND
VIN
EN
TERMINAL FUNCTIONS
TERMINAL
NAME
NO.
I/O
DESCRIPTION
VIN
5
PWR
VIN power supply pin
GND
6
PWR
GND supply pin
EN
4
I
SW
1
OUT
This is the switch pin and is connected to the internal MOSFET switches. Connect the external
inductor between this terminal and the output capacitor.
FB
3
I
Feedback pin for the internal regulation loop. Connect the external resistor divider to this pin. In
case of fixed output-voltage option, connect this pin directly to the output capacitor.
MODE
2
I
MODE pin = high forces the device to operate in fixed-frequency PWM mode. Mode pin = low
enables the power-save mode with automatic transition from PFM mode to fixed-frequency PWM
mode.
Thermal pad
This is the enable pin of the device. Pulling this pin to low forces the device into shutdown mode.
Pulling this pin to high enables the device. This pin must be terminated.
Must be soldered to achieve appropriate power dissipation. Should be connected to GND.
FUNCTIONAL BLOCK DIAGRAM
VIN
EN
Thermal
Shutdown
Current
Limit Comparator
Softstart
VOUT RAMP
CONTROL
VIN
High Side
Reference
0.6 V VREF
PFM Comp
FB
VREF
MODE
Undervoltage
Lockout 1.8 V
MODE
Error Amp
Control
Stage
Gate Driver
Anti
Shoot-Through
SW
VREF
Integrator
FB
Zero-Pole
AMP.
PWM
Comp .
GND
Low Side
Sawtooth
Generator
2.25 MHz
Oscillator
Current
Limit Comparator
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GND
5
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PARAMETER MEASUREMENT INFORMATION
L
2.2 mH
TPS62590DRV
VIN
VIN
VOUT
SW
EN
CIN
10mF
R1
FB
MODE
C1
22pF
COUT
GND
10mF
R2
PwPd
Table 2. List of Components:
COMPONENT REFERENCE
PART NUMBER
MANUFACTURER
VALUE
CIN
GRM188R60J106M
Murata
10-μF, 6.3-V. X5R ceramic
COUT
GRM188R60J106M
Murata
10-μF, 6.3-V. X5R ceramic
Murata
22-pF, ceramic
Coilcraft
2.2 μH, 110mΩ
C1
L1
LPS3015
R1, R2
Values depending on the programmed output voltage
Spacer
TYPICAL CHARACTERISTICS
Table 3. Table Of Graphs
FIGURE
Efficiency
Output Voltage
Transient Behavior
vs Output Current VOUT = 1.8 V (Power-Save Mode)
Figure 1
vs Output Current VOUT = 1.8 V (Forced PWM Mode)
Figure 2
vs Output Current VOUT = 3.3 V (Power-Save Mode)
Figure 3
vs Output Current VOUT = 3.3 V (Forced PWM Mode)
Figure 4
vs Output Current VOUT = 1.8 V (Forced PWM Mode)
Figure 5
vs Output Current VOUT = 1.8 V (Power-Save Mode)
Figure 6
vs Output Current VOUT = 3.3 V (Forced PWM Mode)
Figure 7
vs Output Current VOUT = 3.3 V (Power-Save Mode)
Figure 8
PFM Load Transient
Figure 9
PFM Line Transient
Figure 10
PWM Load Transient
Figure 11
PWM Line Transient
Figure 12
Typical Performance – PFM Mode
Figure 13
Typical Performance – PWM Mode
Figure 14
Shutdown Current
into VIN vs. Input Voltage
Figure 15
Quiescent Current
vs Input Voltage
Figure 16
Static Drain-Source On-State
Resistance
vs Input Voltage
6
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Figure 17
Figure 18
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SLVSAO5A – DECEMBER 2010 – REVISED APRIL 2012
EFFICIENCY
vs
OUTPUT CURRENT
EFFICIENCY
vs
OUTPUT CURRENT
100
100
VI = 2.7 V
90
90
VI = 3.6 V
80
60
80
VI = 3.3 V
VI = 4.5 V
70
Efficiency - %
Efficiency - %
70
VI = 5 V
50
40
30
10
0
0.0001
0.001
0.01
IO - Output Current - A
0.1
0
0.001
1
0.01
0.1
IO - Output Current - A
Figure 1.
Figure 2.
EFFICIENCY
vs
OUTPUT CURRENT
EFFICIENCY
vs
OUTPUT CURRENT
1
100
VI = 4.2 V
90
VI = 5 V
80
80
VI = 4.2 V
60
50
40
30
20
10
0.01
IO - Output Current - A
0.1
VI = 5 V
60
VI = 4.5 V
50
40
VOUT = 3.3 V,
MODE = VIN,
L = 2.2 mH
30
VOUT = 3.3 V,
MODE = GND,
L = 2.2 mH
0.001
VI = 3.8 V
70
VI = 3.8 V
Efficiency - %
Efficiency - %
VOUT = 1.8 V,
MODE = VIN,
L = 2.2 mH
10
90
0
0.0001
VI = 4.5 V
40
20
100
70
VI = 5 V
50
30
VOUT = 1.8 V,
MODE = GND,
L = 2.2 mH
20
VI = 2.7 V
60
20
10
1
0
0.001
Figure 3.
0.01
0.1
IO - Output Current - A
1
Figure 4.
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OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
1.9
1.85
VO = 1.8 V,
MODE = GND
VO = 1.8 V,
MODE = VI
1.88
VO - Output Voltage - V
VO - Output Voltage - V
1.83
VI = 2.7 V, TA = 25°C
1.81
1.79
VI = 4.5 V, TA = 25°C
VI = 3.6 V, TA = 25°C
1.77
1.86
PWM Mode
PFM Mode, Voltage Positioning On
1.84
1.82
VI = 4.5 V, TA = 25°C
VI = 3.6 V, TA = 25°C
1.8
VI = 2.7 V, TA = 25°C
1.75
0.00001
0.0001
0.001
0.01
IO - Output Current - A
0.1
1.78
0.00001
1
Figure 6.
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
0.1
1
3.4
VO = 3.3 V,
MODE = GND
VO = 3.3 V,
MODE = VI
VI = 4.5 V, TA = 25°C
3.36
VO - Output Voltage - V
3.33
VI = 4.5 V, TA = 25°C
3.31
VI = 4.2 V, TA = 25°C
VI = 3.7 V, TA = 25°C
3.29
VI = 5 V, TA = 25°C
3.25
0.00001
VI = 4.2 V, TA = 25°C
3.32
PFM Mode, Voltage Positioning On
PWM Mode
3.28
3.24
3.27
0.0001
0.001
0.01
IO - Output Current - A
0.1
1
3.2
0.00001
Figure 7.
8
0.001
0.01
IO - Output Current - A
Figure 5.
3.35
VO - Output Voltage - V
0.0001
0.0001
0.001
0.01
IO - Output Current - A
0.1
1
Figure 8.
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PFM LOAD TRANSIENT
PFM LINE TRANSIENT
VIN 3.6 V,
VOUT 1.8 V,
IOUT 300 mA to 800 mA,
MODE = GND VOUT 100 mV/Div
SW 2V/Div
VOUT 50 mV/Div
VIN 3.6 V,
VOUT 1.8 V,
IOUT 50 mA to 250 mA,
250 mA
MODE = GND
IOUT 500 mA/Div
800 mA
300 mA
IOUT 200 mA/Div
50 mA
Icoil 500 mA/Div
Icoil 500 mA/Div
Time Base - 20 ms/Div
Time Base - 20 ms/Div
Figure 9.
Figure 10.
PWM LOAD TRANSIENT
PWM LINE TRANSIENT
VIN 3.6 V to 4.2 V
500 mV/Div
VIN 3.6 V to 4.2 V,
500 mV/Div
VOUT = 1.8 V,
50 mV/Div,
IOUT = 50 mA,
MODE = GND
VOUT = 1.8 V,
50 mV/Div,
IOUT = 250 mA,
MODE = GND
Time Base - 100 ms/Div
Time Base - 100 ms/Div
Figure 11.
Figure 12.
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TYPICAL PERFORMANCE – PFM MODE
TYPICAL PERFORMANCE – PWM MODE
VIN 3.6 V,
VOUT 1.8 V, IOUT 150 mA,
VOUT 20 mV/Div
VOUT 10 mV/Div
L 2.2 mH, COUT 10 mF 0603
VIN 3.6 V,
VOUT 1.8 V, IOUT 10 mA,
SW 2 V/Div
L 2.2 mH, COUT 10 mF 0603
SW 2 V/Div
Icoil 200 mA/Div
Icoil 200 mA/Div
Time Base - 10 ms/Div
Time Base - 10 ms/Div
Figure 13.
Figure 14.
SHUTDOWN CURRENT INTO VIN
vs
INPUT VOLTAGE
QUIESCENT CURRENT
vs
INPUT VOLTAGE
0.8
20
0.7
18
0.6
IQ – Quiescent Current – mA
ISD - Shutdown Current Into VIN − mA
EN = GND
o
TA = 85 C
0.5
0.4
0.3
0.2
o
TA = -40oC
TA = 25 C
MODE = GND,
EN = VIN,
Device Not Switching
16
o
TA = 25 C
14
12
o
TA = -40 C
10
0.1
0
2.5
3
3.5
4
4.5
5
5.5
8
2.5
VIN − Input Voltage − V
3
3.5
4
4.5
5
5.5
VIN − Input Voltage − V
Figure 15.
10
o
TA = 85 C
Figure 16.
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0.8
High Side Switching
0.7
0.6
o
TA = 85 C
0.5
o
TA = 25 C
0.4
0.3
0.2
0.1
0
2.5
o
TA = -40 C
3
3.5
4
VIN − Input Voltage − V
4.5
5
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
INPUT VOLTAGE
RDS(on) - Static Drain-Source On-State Resistance − W
RDS(on) - Static Drain-Source On-State Resistance − W
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
INPUT VOLTAGE
0.4
Low Side Switching
0.35
0.3
o
TA = 85 C
0.25
o
TA = 25 C
0.2
0.15
0.1
o
0.05
TA = -40 C
0
2.5
Figure 17.
3
3.5
4
4.5
5
VIN − Input Voltage − V
Figure 18.
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DETAILED DESCRIPTION
OPERATION
The TPS62590-Q1 step-down converter operates with typically 2.25-MHz fixed-frequency pulse-width modulation
(PWM) at moderate to heavy load currents. At light load currents, the converter can automatically enter powersave mode and operates then in PFM mode.
During PWM mode, the converter uses a unique fast-response voltage-mode controller scheme with inputvoltage feed-forward to achieve good line and load regulation, allowing the use of small ceramic input and output
capacitors. At the beginning of each clock cycle initiated by the clock signal, the high-side MOSFET switch is
turned on. The current flows now from the input capacitor via the high-side MOSFET switch through the inductor
to the output capacitor and load. During this phase, the current ramps up until the PWM comparator trips and the
control logic turns off the switch. The current-limit comparator also turns off the switch if the current limit of the
high-side MOSFET switch is exceeded. After a dead time preventing shoot-through current, the low-side
MOSFET rectifier is turned on and the inductor current ramps down. The current flows now from the inductor to
the output capacitor and to the load. It returns to the inductor through the low-side MOSFET rectifier.
The next cycle is initiated by the clock signal again turning off the low-side MOSFET rectifier and turning on the
high-side MOSFET switch.
POWER-SAVE MODE
The power-save mode is enabled with the MODE pin set to low level. If the load current decreases, the converter
enters power-save mode automatically. During power-save mode, the converter skips switching and operates
with reduced frequency in PFM mode with a minimum quiescent current to maintain high efficiency. The
converter positions the output voltage 1% above the nominal output voltage typically. This voltage positioning
feature minimizes voltage drops caused by a sudden load step.
The transition from PWM mode to PFM mode occurs once the inductor current in the low-side MOSFET switch
becomes zero, which indicates discontinuous-conduction mode.
During the power-save mode, the output voltage is monitored with a PFM comparator. As the output voltage falls
below the PFM comparator threshold of VOUT nominal + 1%, the device starts a PFM current pulse. For this, the
high-side MOSFET switch turns on and the inductor current ramps up. After the on-time expires, the switch is
turned off and the low-side MOSFET switch is turned on until the inductor current becomes zero.
The converter effectively delivers a current to the output capacitor and the load. If the load is below the delivered
current, the output voltage rises. If the output voltage is equal to or higher than the PFM comparator threshold,
the device stops switching and enters a sleep mode with typical 15-μA current consumption.
If the output voltage is still below the PFM comparator threshold, a sequence of further PFM current pulses is
generated until the PFM comparator threshold is reached. The converter starts switching again once the output
voltage drops below the PFM comparator threshold.
With a fast single-threshold comparator, the output voltage ripple during PFM mode can be kept small. The PFM
pulse is time-controlled, which allows modifying the charge transferred to the output capacitor by the value of the
inductor. The resulting PFM output voltage ripple and PFM frequency depend in first order on the size of the
output capacitor and the inductor value. Increasing output capacitor values and inductor values minimizes the
output ripple. The PFM frequency decreases with smaller inductor values and increases with larger values.
The PFM mode is left and PWM mode entered in case the output current can no longer be supported in PFM
mode. The power-save mode can be disabled by setting the MODE pin to high. The converter then operates in
fixed-frequency PWM mode.
Dynamic Voltage Positioning
This feature reduces the voltage under- and overshoots at load steps from light to heavy load and vice versa. It
is active in power-save mode and regulates the output voltage 1% higher than the nominal value. This provides
more headroom for both the voltage drop at a load step, and the voltage increase at a load throw-off.
12
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Output voltage
Voltage Positioning
Vout +1%
PFM Comparator
threshold
Light load
PFM Mode
Vout (PWM)
moderate to heavy load
PWM Mode
Figure 19. Operation in Power-Save Mode
100% Duty-Cycle Low-Dropout Mode
The device starts to enter 100% duty-cycle mode once the input voltage comes close the nominal output voltage.
To maintain the output voltage, the high-side MOSFET switch is turned on 100% for one or more cycles.
With further decreasing VIN, the high-side MOSFET switch is turned on completely. In this case, the converter
offers a low input-to-output voltage difference. This is particularly useful in battery-powered applications to
achieve longest operation time by taking full advantage of the whole battery voltage range.
The minimum input voltage to maintain regulation depends on the load current and output voltage, and can be
calculated as:
VINmin = VOmax + IOmax × rDS(on)max + RL)
with:
IOmax = maximum output current plus inductor ripple current
rDS(on)max = maximum P-channel switch rDS(on).
RL = dc resistance of the inductor
VOmax = nominal output voltage plus maximum output-voltage tolerance
Undervoltage Lockout
The undervoltage lockout circuit prevents the device from malfunctioning at low input voltages and from
excessive discharge of the battery and disables the output stage of the converter. The undervoltage lockout
threshold is typically 1.85 V with falling VIN.
MODE SELECTION
The MODE pin allows mode selection between forced PWM mode and power-save mode.
Connecting this pin to GND enables the power-save mode with automatic transition between PWM and PFM
modes. Pulling the MODE pin high forces the converter to operate in fixed-frequency PWM mode even at light
load currents. This allows simple filtering of the switching frequency for noise-sensitive applications. In this mode,
the efficiency is lower compared to the power-save mode during light loads.
The condition of the MODE pin can be changed during operation and allows efficient power management by
adjusting the operation mode of the converter to the specific system requirements.
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ENABLE
The device is enabled setting EN pin to high. During start-up time tStart Up, the internal circuits are settled.
Afterwards, the device activates the soft-start circuit. The EN input can be used to control power sequencing in a
system with various dc/dc converters. The EN pin can be connected to the output of another converter, to drive
the EN pin high and get a sequencing of supply rails. With EN = GND, the device enters shutdown mode. In this
mode, all circuits are disabled. In fixed-output-voltage versions, the internal resistor divider network is
disconnected from the FB pin.
SOFT START
The TPS62590-Q1 has an internal soft-start circuit that controls the ramp-up of the output voltage. The output
voltage ramps up from 5% to 95% of its nominal value within typically 250 μs. This limits the inrush current in the
converter during ramp-up and prevents possible input voltage drops when a battery or high-impedance power
source is used. The soft-start circuit is enabled within start-up time tStart Up.
SHORT-CIRCUIT PROTECTION
The high-side and low-side MOSFET switches are short-circuit protected with maximum switch current = ILIMF.
The current in the switches is monitored by current-limit comparators. Once the current in the high-side MOSFET
switch exceeds the threshold of its current-limit comparator, it turns off and the low-side MOSFET switch is
activated to ramp down the current in the inductor and high-side MOSFET switch. The high-side MOSFET switch
can only turn on again once the current in the low-side MOSFET switch has decreased below the threshold of its
current-limit comparator.
THERMAL SHUTDOWN
As soon as the junction temperature TJ exceeds 140°C (typical) the device goes into thermal shutdown. In this
mode, the high-side and low-side MOSFETs are turned off. The device continues its operation when the junction
temperature falls below the thermal shutdown hysteresis.
14
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APPLICATION INFORMATION
L
2.2 mH
TPS62590DRV
5
VIN
2.5 V to 5.5 V
4
CIN
10mF
2
VIN
EN
3
FB
MODE
VOUT =1.8V
1
SW
R1
360kΩ
Up to 1A
C1
22pF
R2
180kΩ
6
GND
PwrPAD
COUT
10mF
Figure 20. TPS62590-Q1DRV Adjustable 1.8 V
L
2.2 mH
TPS62590DRV
5
VIN
3.3 V to 5.5 V
4
CIN
10mF
2
VIN
SW
EN
FB
MODE
GND
VOUT =3.3V
1
3
R1
820kΩ
I OUT,max =1A
C1
22pF
6
PwrPAD
R2
182kΩ
COUT
10mF
Figure 21. TPS62590-Q1DRV Adjustable 3.3 V
OUTPUT VOLTAGE SETTING
The output voltage can be calculated to:
æ
R1ö÷
V OUT = VREF x çç1 +
÷
çè
R2 ø÷
(1)
with the internal reference voltage VREF = 0.6 V typically.
To minimize the current through the feedback divider network, R2 should be 180 kΩ or 360 kΩ. The sum of R1
and R2 should not exceed approximately 1 MΩ, to keep the network robust against noise. An external feedforward capacitor C1 is required for optimum load-transient response. The value of C1 should be in the range
between 22 pF and 33 pF.
Route the FB line away from noise sources, such as the inductor or the SW line.
OUTPUT FILTER DESIGN (INDUCTOR AND OUTPUT CAPACITOR)
The TPS62590-Q1 is designed to operate with inductors in the range of 1.5 μH to 4.7 μH and with output
capacitors in the range of 4.7 μF to 22 μF. The part is optimized for operation with a 2.2-μH inductor and 10-μF
output capacitor. Larger or smaller inductor values can be used to optimize the performance of the device for
specific operation conditions. For stable operation, the L and C values of the output filter may not fall below 1-μH
effective inductance and 3.5-μF effective capacitance.
Inductor Selection
The inductor value has a direct effect on the ripple current. The selected inductor must be rated for its dc
resistance and saturation current. The inductor ripple current (ΔIL) decreases with higher inductance and
increases with higher VI or VO.
The inductor selection also impacts the output-voltage ripple in PFM mode. Higher inductor values lead to lower
output-voltage ripple and higher PFM frequency; lower inductor values lead to a higher output-voltage ripple but
lower PFM frequency.
Equation 2 calculates the maximum inductor current under static load conditions. The saturation current of the
inductor should be rated higher than the maximum inductor current as calculated with Equation 3. This is
recommended because during heavy load transients the inductor current rises above the calculated value.
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V
1 * OUT
V
DI L + VOUT
L
I L max + I out max )
IN
f
DI L
(2)
2
(3)
with:
f = Switching frequency (2.25 MHz, typical)
L = Inductor Value
ΔIL = Peak-to-peak inductor ripple current
ILmax = Maximum inductor current
A more conservative approach is to select the inductor current rating just for the maximum switch current of the
corresponding converter.
Accepting larger values of ripple current allows the use of low inductance values, but results in higher output
voltage ripple, greater core losses, and lower output-current capability.
The total losses of the coil have a strong impact on the efficiency of the dc/dc conversion and consist of both the
losses in the dc resistance (R(DC)) and the following frequency-dependent components:
• The losses in the core material (magnetic hysteresis loss, especially at high switching frequencies)
• Additional losses in the conductor from the skin effect (current displacement at high frequencies)
• Magnetic field losses of the neighboring windings (proximity effect)
• Radiation losses
Table 4. List of Inductors
DIMENSIONS [mm]
INDUCTOR TYPE
SUPPLIER
3 × 3 × 1.5
LPS3015
Coilcraft
3 × 3 × 1.5
LQH3NPN2R2NM0
MURATA
3.2 × 2.6 × 1.2
MIPSA3226D2R2
FDK
Output Capacitor Selection
The advanced fast-response voltage-mode control scheme of the TPS62590-Q1 allows the use of tiny ceramic
capacitors. Ceramic capacitors with low ESR values have the lowest output-voltage ripple and are
recommended. The output capacitor requires either an X7R or X5R dielectric. Y5V and Z5U dielectric capacitors,
aside from their wide variation in capacitance over temperature, become resistive at high frequencies.
At nominal load current, the device operates in PWM mode, and the RMS ripple current is calculated as:
V
1 * OUT
V
I RMSC
OUT
+ VOUT
L
IN
1
f
2
Ǹ3
(4)
The overall output voltage ripple under the same conditions is the sum of the voltage spike caused by the output
capacitor ESR plus the voltage ripple caused by charging and discharging the output capacitor:
V
1 * OUT
V
DV OUT + VOUT
L
IN
f
ǒ8
1
Cout
f
Ǔ
) ESR
(5)
At light load currents, the converter operates in power-save mode, and the output-voltage ripple is dependent on
the output capacitor and inductor values. Larger output capacitor and inductor values minimize the voltage ripple
in PFM mode and tighten dc output accuracy in PFM mode.
16
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Input Capacitor Selection
The buck converter has a natural pulsating input current; therefore, a low ESR input capacitor is required for best
input voltage filtering and minimizing the interference with other circuits caused by high input voltage spikes. For
most applications, a 10-μF ceramic capacitor is recommended. The input capacitor can be increased without any
limit for better input voltage filtering.
Take care when using only small ceramic input capacitors. When a ceramic capacitor is used at the input and the
power is being supplied through long wires, such as from a wall adapter, a load step at the output or VIN step on
the input can induce ringing at the VIN pin. The ringing can couple to the output and be mistaken as loop
instability or could even damage the part by exceeding the maximum ratings.
Table 5. List of Capacitor
CAPACITANCE
TYPE
SIZE
SUPPLIER
10 μF
GRM188R60J106M69D
0603 1.6 mm × 0.8 mm × 0.8 mm
Murata
LAYOUT CONSIDERATIONS
As for all switching power supplies, the layout is an important step in the design. Proper function of the device
demands careful attention to PCB layout. Care must be taken in board layout to get the specified performance. If
the layout is not carefully done, the regulator could show poor line and/or load regulation, stability issues, and
EMI problems. It is critical to provide a low-inductance, low-impedance ground path. Therefore, use wide and
short traces for the main current paths. The input capacitor, output capacitor, and inductor should be placed as
close as possible to the IC pins.
Connect the GND pin of the device to the thermal pad of the PCB and use this pad as a star point. Use a
common power GND node and a different node for the signal GND to minimize the effects of ground noise.
Connect these ground nodes together to the thermal pad (star point) underneath the IC. Keep the common path
to the GND pin, which returns the small-signal components and the high current of the output capacitors, as
short as possible to avoid ground noise. The FB line should be connected directly to the output capacitor and
routed away from noisy components and traces (for example, the SW line).
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VOUT
R2
GND
C1
R1
COUT
CIN
VIN
L
G
N
D
U
Figure 22. Layout
18
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PACKAGE OPTION ADDENDUM
www.ti.com
17-Apr-2012
PACKAGING INFORMATION
Orderable Device
TPS62590TDRVRQ1
Status
(1)
Package Type Package
Drawing
ACTIVE
SON
DRV
Pins
Package Qty
6
3000
Eco Plan
(2)
Green (RoHS
& no Sb/Br)
Lead/
Ball Finish
MSL Peak Temp
(3)
Samples
(Requires Login)
CU NIPDAU Level-2-260C-1 YEAR
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TPS62590-Q1 :
• Catalog: TPS62590
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPS62590TDRVRQ1
Package Package Pins
Type Drawing
SON
DRV
6
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
3000
179.0
8.4
Pack Materials-Page 1
2.2
B0
(mm)
K0
(mm)
P1
(mm)
2.2
1.2
4.0
W
Pin1
(mm) Quadrant
8.0
Q2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jul-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS62590TDRVRQ1
SON
DRV
6
3000
195.0
200.0
45.0
Pack Materials-Page 2
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