VISHAY VSMS3700-GS08

VSMS3700
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
94 8553
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with IR emitter series VEMT3700
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
DESCRIPTION
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
VSMS3700 is an infrared, 950 nm emitting diode in GaAs
technology, molded in a PLCC-2 package for surface
mounting (SMD).
with
APPLICATIONS
• Infrared source in tactile keyboards
• IR diode in low space applications
• PCB mounted infrared sensors
• Emitter in miniature photo-interrupters
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
± 60
950
800
VSMS3700
4.5
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMS3700-GS08
VSMS3700-GS18
Note
MOQ: minimum order quantity
PACKAGING
REMARKS
PACKAGE FORM
Tape and reel
Tape and reel
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PLCC-2
PLCC-2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
Surge forward current
tp = 100 µs
IFSM
1.5
A
PV
170
mW
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tj
100
°C
Tamb
- 40 to + 85
°C
°C
Tstg
- 40 to + 100
acc. figure 11, J-STD-020
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
250
K/W
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: [email protected]
Document Number: 81373
Rev. 1.2, 04-Sep-08
VSMS3700
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
950 nm, GaAs
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21341
20 30
40
50
60
70 80
90
0
100
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21342
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
MIN.
1.3
1.7
IF = 1 A, tp = 100 µs
VF
1.8
IF = 100 mA
TKVF
- 1.3
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
4.5
V
V
mV/K
100
µA
8.0
mW/sr
30
1.6
UNIT
pF
IF = 1.5 A, tp = 100 µs
Ie
35
IF = 100 mA, tp = 20 ms
φe
15
mW
IF = 100 mA
TKφe
- 0.8
%/K
ϕ
± 60
deg
Peak wavelength
IF = 100 mA
λp
950
nm
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
IF = 20 mA
tr
800
ns
IF = 1 A
tr
400
ns
IF = 20 mA
tf
800
ns
IF = 1 A
tf
400
ns
EN 60825-1
d
0.5
mm
Radiant power
Temperature coefficient of φe
Angle of half intensity
Rise time
Fall time
Virtual source diameter
mW/sr
Note
Tamb = 25 °C, unless otherwise specified
Document Number: 81373
Rev. 1.2, 04-Sep-08
For technical questions, contact: [email protected]
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323
VSMS3700
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10 000
100
I F - Forward Current (mA)
Ie - Radiant Intensity (mW/sr)
Tamb < 60 °C
tp/T = 0.005
0.01
1000
0.02
0.05
100
0.2
0.5
DC
0.1
10
1
0.01
1
10
100
t p - Pulse Length (ms)
100
Φe - Radiant Power (mW)
I F - Forward Current (mA)
103
104
1000
10 3
10 2
10 1
10 0
0
1
2
3
100
10
1
0.1
100
4
V F - Forward Voltage (V)
94 7996
101
102
103
104
IF - Forward Current (mA)
94 8012
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
IF = 10 mA
Ie rel; Φe rel
VF rel - Relative Forward Voltage (V)
102
Fig. 6 - Radiant Intensity vs. Forward Current
10 4
1.0
0.9
IF = 20 mA
0.8
0.4
0.8
0.7
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
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101
IF - Forward Current (mA)
94 7956
Fig. 3 - Pulse Forward Current vs. Pulse Duration
94 7990
1
0.1
0.1
95 9985
10 -1
10
0
- 10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 81373
Rev. 1.2, 04-Sep-08
VSMS3700
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
950 nm, GaAs
0°
10°
20°
1.0
0.75
0.5
0.25
IF = 100 mA
0
900
0.9
50°
0.8
60°
1000
950
70°
0.7
80°
0.6
0.4
0.2
0
94 8013
λ - Wavelength (nm)
94 7994
40°
1.0
ϕ - Angular Displacement
30°
Ie rel - Relative Radiant Intensity
Φe rel - Relative Radiant Power
1.25
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
0.9
1.75 ± 0.1
3.5 ± 0.2
Pin identification
Mounting Pad Layout
4
A
area covered with
solder resist
2.6 (2.8)
C
2.2
2.8 ± 0.15
1.2
4
Ø 2.4
1.6 (1.9)
3 + 0.15
20541
Die Position (for reference only)
X = +/- 0.2 mm centrical
Y = +/- 0.2 mm centrical
Z = 1.13 mm +/- 0.25 mm, from top of die bottom of component
Document Number: 81373
Rev. 1.2, 04-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
325
VSMS3700
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
SOLDER PROFILE
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
Temperature (°C)
2.2
2.0
3.5
3.1
300
5.75
5.25
200
4.0
3.6
max. 30 s
150
3.6
3.4
max. 100 s
max. 120 s
8.3
7.7
100
1.85
1.65
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
1.6
1.4
4.1
3.9
0
0
50
19841
100
150
200
250
0.25
4.1
3.9
2.05
1.95
300
94 8668
Time (s)
Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
Fig. 13 - Tape Dimensions in mm for PLCC-2
DRYPACK
MISSING DEVICES
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
De-reeling direction
94 8158
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
> 160 mm
Tape leader
40 empty
compartments
min. 75 empty
compartments
Carrier leader
Carrier trailer
Fig. 14 - Beginning and End of Reel
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments. The
tape leader may include the carrier tape as long as the cover
tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least 75
empty compartments and sealed with cover tape.
Adhesive tape
Blister tape
Component cavity
94 8670
Fig. 12 - Blister Tape
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326
For technical questions, contact: [email protected]
Document Number: 81373
Rev. 1.2, 04-Sep-08
VSMS3700
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
950 nm, GaAs
COVER TAPE REMOVAL FORCE
10.0
9.0
120°
4.5
3.5
2.5
1.5
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
13.00
12.75
63.5
60.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
14.4 max.
180
178
94 8665
Fig. 15 - Dimensions of Reel-GS08
10.4
8.4
120°
4.5
3.5
2.5
1.5
13.00
12.75
62.5
60.0
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
321
329
14.4 max.
18857
Fig. 16 - Dimensions of Reel-GS18
Document Number: 81373
Rev. 1.2, 04-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
327
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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