3 CY7C1019BV33 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 Functional Description The CY7C1019BV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1019BV33 is available in a standard 400-mil-wide package. Logic Block Diagram Pin Configurations SOJ Top View A0 A1 A2 A3 I/O0 INPUT BUFFER CE I/O0 I/O1 VCC V SS I/O1 I/O2 SENSE AMPS ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 A8 512 x 256 x 8 ARRAY I/O3 I/O2 I/O3 WE A4 A5 A6 A7 I/O4 I/O5 CE COLUMN DECODER I/O6 POWER DOWN I/O7 WE A16 A15 A14 A13 32 31 30 29 28 27 26 25 24 23 22 21 OE I/O7 I/O6 VSS VCC I/O5 I/O4 A12 A11 A10 A9 A8 20 19 18 17 1019BV33–2 1019BV33–1 A9 A 10 A 11 A 12 A 13 A 14 A 15 A 16 OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Selection Guide 7C1019BV33-10 7C1019BV33-12 7C1019BV33-15 Maximum Access Time (ns) 10 12 15 Maximum Operating Current (mA) 175 160 145 5 5 5 − 0.5 0.5 Maximum Standby Current (mA) L Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 January 19, 2001 CY7C1019BV33 Current into Outputs (LOW)......................................... 20 mA Maximum Ratings Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) (Above which the useful life may be impaired. For user guidelines, not tested.) Latch-Up Current ..................................................... >200 mA Storage Temperature ................................. –65°C to +150°C Operating Range Ambient Temperature with Power Applied ............................................. –55°C to +125°C Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ....................................–0.5V to VCC + 0.5V Range Ambient Temperature[2] VCC 0°C to +70°C 3.3V ± 10% Commercial DC Input Voltage[1].................................–0.5V to VCC + 0.5V Electrical Characteristics Over the Operating Range Parameter Description Test Conditions 7C1019BV33 -10 7C1019BV33 -12 7C1019BV33 -15 Min. Min. Min. Max. VOH Output HIGH Voltage VCC = Min., IOH = – 4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA VIH Input HIGH Voltage VIL Input LOW Voltage[1] IIX Input Load Current IOZ Output Leakage Current ICC VCC Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC 175 ISB1 Automatic CE Power-Down Current —TTL Inputs Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX ISB2 Automatic CE Power-Down Current —CMOS Inputs Max. VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 2.4 2.4 0.4 GND < VI < VCC GND < VI < VCC, Output Disabled Max. Max. 2.4 0.4 V 0.4 V V 2.2 VCC + 0.3 2.2 VCC + 0.3 2.2 VCC + 0.3 –0.3 0.8 –0.3 0.8 –0.3 0.8 V –1 +1 –1 +1 –1 +1 µA –5 +5 –5 +5 –5 +5 µA 160 145 mA 20 20 20 mA 5 5 5 mA − 0.5 0.5 L Capacitance[3] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the “Instant On” case temperature. 3. Tested initially and after any design or process changes that may affect these parameters. 2 Unit Max. Unit 6 pF 8 pF CY7C1019BV33 AC Test Loads and Waveforms R1 480 Ω R1 480 Ω 3.3V ALL INPUT PULSES 3.0V 3.3V OUTPUT 90% OUTPUT 30 pF R2 255 Ω INCLUDING JIG AND SCOPE (a) R2 255 Ω 5 pF INCLUDING JIG AND SCOPE (b) 90% 10% GND 10% ≤ 3 ns ≤ 3 ns 1019BV33–3 1019BV33–4 THÉVENIN EQUIVALENT 167 Ω 1.73V OUTPUT Equivalent to: Switching Characteristics[4] Over the Operating Range Parameter Description 7C1019BV33-10 7C1019BV33-12 7C1019BV33-15 Min. Min. Min. Max. Max. Max. Unit READ CYCLE tRC Read Cycle Time tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid 10 12 15 ns tDOE OE LOW to Data Valid 5 6 7 ns tLZOE OE LOW to Low Z tHZOE 10 10 3 tLZCE CE LOW to Low Z tHZCE CE HIGH to High Z[5, 6] tPU CE LOW to Power-Up tPD CE HIGH to Power-Down 12 5 3 3 0 10 ns 7 6 ns ns 7 0 12 ns ns 0 3 0 15 6 5 ns 3 0 [5, 6] [6] 15 3 0 OE HIGH to High Z WRITE CYCLE 12 ns ns 15 ns [7, 8] tWC Write Cycle Time 10 12 15 ns tSCE CE LOW to Write End 8 9 10 ns tAW Address Set-Up to Write End 7 8 10 ns tHA Address Hold from Write End 0 0 0 ns tSA Address Set-Up to Write Start 0 0 0 ns tPWE WE Pulse Width 7 8 10 ns tSD Data Set-Up to Write End 5 6 8 ns tHD Data Hold from Write End 0 0 0 ns tLZWE WE HIGH to Low Z[6] 3 3 3 ns tHZWE [5, 6] WE LOW to High Z 5 6 7 ns Notes: 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 5. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 8. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. 3 CY7C1019BV33 Data Retention Characteristics Over the Operating Range (L Version Only) Parameter Description Conditions VDR VCC for Data Retention ICCDR Data Retention Current tCDR[3] Chip Deselect to Data Retention Time tR Operation Recovery Time Min. Max. Unit 150 µA 2.0 No input may exceed VCC + 0.5V VCC = V DR = 2.0V, CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V V 0 ns 200 µs Data Retention Waveform DATA RETENTION MODE 3.0V VCC VDR > 2V 3.0V tR tCDR CE 1019BV33–5 Switching Waveforms Read Cycle No. 1[9, 10] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID 1019BV33–6 Read Cycle No. 2 (OE Controlled)[10, 11] ADDRESS tRC CE tACE OE tHZOE tDOE DATA OUT tHZCE tLZOE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT HIGH IMPEDANCE tPD tPU ICC 50% 50% ISB 1019BV33–7 Notes: 9. Device is continuously selected. OE, CE = VIL. 10. WE is HIGH for read cycle. 11. Address valid prior to or coincident with CE transition LOW. 4 CY7C1019BV33 Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[12, 13] tWC ADDRESS tSCE CE tSA tSCE tAW tHA tPWE WE tSD DATA I/O tHD DATA VALID 1019BV33–8 Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[12, 13] tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE OE tSD DATA I/O tHD DATAIN VALID NOTE 14 tHZOE 1019BV33–98 Notes: 12. Data I/O is high impedance if OE = VIH. 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 14. During this period the I/Os are in the output state and input signals should not be applied. 5 CY7C1019BV33 Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[13] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE tSD NOTE 14 DATA I/O tHD DATA VALID tLZWE tHZWE 1019BV33–10 Truth Table CE OE WE I/O 0–I/O7 Mode Power H X X High Z Power-Down Standby (ISB) X X X High Z Power-Down Standby (ISB) L L H Data Out Read Active (ICC) L X L Data In Write Active (ICC) L H H High Z Selected, Outputs Disabled Active (ICC) Ordering Information Speed (ns) 10 12 15 Ordering Code CY7C1019BV33-10VC CY7C1019BV33-12VC CY7C1019BV33L-12VC CY7C1019BV33-15VC CY7C1019BV33L-15VC CY7C1019BV33-15VI Package Name V33 V33 V33 V33 V33 V33 Package Type 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ Document #: 38-01053-*A 6 Operating Range Commercial Industrial CY7C1019BV33 Package Diagram 32-Lead (400-Mil) Molded SOJ V33 51-85041-A © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.