SPP3401W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES -30V/-4.0A,RDS(ON)= 70mΩ@VGS=- 10V -30V/-3.2A,RDS(ON)= 90mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)= 115mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING S41WYW 2011/06/01 Preliminary Page 1 SPP3401W P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package SPP3401WS23RG SOT-23 Part Marking S41W ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3401WS23RG : Tape Reel ; Pb – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate –Source Voltage VGSS ±12 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature TA=25℃ TA=70℃ ID -4.0 -3.2 A IDM -15 A IS -1.0 A PD 1.25 0.8 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 ℃/W 2011/06/01 Preliminary Page 2 SPP3401W P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage -0.4 VDS≦-5V,VGS=-10V IS=-1.0A,VGS=0V V -1.0 VDS=0V,VGS=±12V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=55℃ VGS=- 10V,ID=-4.0A RDS(on) VGS=-4.5V,ID=-3.2A VGS=-2.5V,ID=-1.2A gfs VDS=-5.0V,ID=-4.0A VSD -30 ±100 -1 -10 nA uA -10 A 0.068 0.088 0.118 10 0.077 0.099 0.127 -0.8 -1.2 10 18 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 55 td(on) 8 18 8 18 25 50 25 35 Turn-On Time Turn-Off Time 2011/06/01 Preliminary tr td(off) tf VDS=-15V,VGS=-10V ID≡-4.0A nC 1.6 3.0 VDS=-15V,VGS=0V f=1MHz VDD=-15V,RL=15Ω ID≡-1.0A,VGEN=-10V RG=6Ω 450 pF 95 Page 3 ns SPP3401W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/06/01 Preliminary Page 4 SPP3401W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/06/01 Preliminary Page 5 SPP3401W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/06/01 Preliminary Page 6 SPP3401W P-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE 2011/06/01 Preliminary Page 7 SPP3401W P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011/06/01 Preliminary Page 8