ONSEMI 2N7002K

2N7002K
Small Signal MOSFET
60 V, 380 mA, Single, N−Channel, SOT−23
Features
•
•
•
•
ESD Protected
Low RDS(on)
Surface Mount Package
This is a Pb−Free Device
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V(BR)DSS
RDS(on) MAX
ID MAX
(Note 1)
60 V
1.6 W @ 10 V
380 mA
Applications
•
•
•
•
2.5 W @ 4.5 V
Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
Simplified Schematic
Gate
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Drain Current (Note 1)
Steady State
TA = 25°C
TA = 85°C
ID
2
Source
(Top View)
Power Dissipation (Note 1)
Steady State
t<5s
PD
Pulsed Drain Current (tp = 10 ms)
IDM
1.5
A
Operating Junction and Storage
Temperature Range
TJ, TSTG
−55 to
+150
°C
mW
300
420
3
Source Current (Body Diode)
IS
300
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
ESD
2000
Gate−Source ESD Rating
(HBM, Method 3015)
Drain
380
270
TA = 25°C
TA = 85°C
t<5s
3
mA
320
230
1
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
1
2
SOT−23
CASE 318
STYLE 21
704 MG
G
1
2
Source
Gate
704
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Junction−to−Ambient − Steady State
(Note 1)
RqJA
417
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
RqJA
300
July, 2008 − Rev. 4
Device
2N7002KT1G
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
© Semiconductor Components Industries, LLC, 2008
ORDERING INFORMATION
1
Package
Shipping†
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N7002K/D
2N7002K
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
71
IGSS
mV/°C
TJ = 25°C
1
TJ = 125°C
500
TJ = 25°C
100
nA
VDS = 0 V, VGS = ±20 V
±10
mA
VDS = 0 V, VGS = ±10 V
450
nA
VDS = 0 V, VGS = ±5.0 V
150
nA
2.5
V
VGS = 0 V,
VDS = 60 V
VGS = 0 V,
VDS = 50 V
Gate−to−Source Leakage Current
V
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
VGS = VDS, ID = 250 mA
1.0
4.0
mV/°C
VGS = 10 V, ID = 500 mA
1.19
1.6
VGS = 4.5 V, ID = 200 mA
1.33
2.5
VDS = 5 V, ID = 200 mA
80
S
24.5
pF
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 0 V, f = 1 MHz,
VDS = 20 V
4.2
2.2
nC
0.7
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
0.1
0.3
0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
ns
12.2
VGS = 10 V, VDD = 25 V,
ID = 500 mA, RG = 25 W
tf
9.0
55.8
29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
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2
TJ = 25°C
0.8
TJ = 85°C
0.7
1.2
V
2N7002K
TYPICAL CHARACTERISTICS
9.0 V
8.0 V
7.0 V
6.0 V
1.2
1.2
5.0 V
4.5 V
VGS = 10 V
4.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.6
3.5 V
0.8
3.0 V
0.4
0.8
TJ = 25°C
0.4
2.5 V
0
2
4
0
6
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 125°C
TJ = 85°C
TJ = 25°C
2.0
1.6
TJ = −55°C
1.2
0.8
0.4
0.2
0.4
0.6
0.8
1.0
1.2
6
3.2
VGS = 10 V
2.8
2.4
TJ = 125°C
2.0
TJ = 85°C
1.6
TJ = 25°C
1.2
TJ = −55°C
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
2.4
2.2
2.0
ID = 500 mA
1.6
ID = 200 mA
1.2
0.8
0.4
4
Figure 2. Transfer Characteristics
VGS = 4.5 V
0
2
Figure 1. On−Region Characteristics
2.4
0
0
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
3.2
2.8
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
2
4
6
8
ID = 0.2 A
1.8
VGS = 10 V
1.4
1.0
0.6
−50
10
VGS = 4.5 V
−25
0
25
50
75
100
125
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
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3
150
2N7002K
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
30
20
TJ = 25°C
VGS = 0 V
Coss
10
0
Crss
0
4
8
12
16
20
5
TJ = 25°C
ID = 0.2 A
4
3
2
1
0
0
0.2
0.4
0.6
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
VGS = 0 V
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
Ciss
1
TJ = 85°C
TJ = 25°C
0.1
0.01
0.4
0.6
0.8
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
1.2
0.8
2N7002K
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD
318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
L1
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2N7002K/D