DINTEK DTS2315

DTS2315
www.din-tek.jp
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) () Max.
ID
(A)a
0.065 at VGS = - 4.5 V
- 4.5
0.090 at VGS = - 2.5 V
- 3.7
0.1175 at VGS = - 1.8 V
- 3.3
Qg (Typ.)
• TrenchFET® Power MOSFET
• 100 % Rg Tested
13.8 nC
APPLICATIONS
• Power Management for Portable and Consumer
- Load Switches
- DC/DC Converters
TO-236
(SOT-23)
G
S
1
G
3
S
D
2
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
IDM
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Maximum Power Dissipation
IS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Limit
- 20
± 12
- 4.5
- 3.7
- 3.5b, c
- 2.6b, c
- 20
- 1.4
d, e
- 1b, c
1.7
1.1
1b, c
0.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Symbol
RthJA
RthJF
Typical
100
60
Maximum
130
75
Unit
°C/W
Notes:
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
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DTS2315
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
ID = - 250 µA
VDS = VGS, ID = - 250 µA
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
a
On-State Drain Current
Drain-Source On-State Resistancea
IDSS
RDS(on)
mV/°C
2.5
-1
- 0.4
VDS = 0 V, VGS = ± 12 V
± 10
VDS = 0 V, VGS = ± 4.5 V
±1
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS - 5 V, VGS = - 4.5 V
ID(on)
V
- 14
- 15
V
µA
A
VGS = - 4.5 V, ID = - 4 A
0.0465
0.0650
VGS = - 2.5 V, ID = - 4 A
0.0740
0.0900
VGS = - 1.8 V, ID = - 2 A
0.1135
0.1175
VDS = - 10 V, VGS = - 12V, ID = - 4.5 A
23.8
36
13.8
21

Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A
1.9
nC
3
2.2
11
22
22
33
21
32
62
93
tf
14
21
td(on)
9
18
6
12
f = 1 MHz
td(on)
VDD = - 10 V, RL = 2.8 
ID  - 3.6 A, VGEN = - 4.5 V, Rg = 1 
tr
td(off)
VDD = - 10 V, RL = 2.8 
ID  - 3.6 A, VGEN = - 8 V, Rg = 1 
tr
td(off)
tf
65
98
15
23

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
- 1.4
- 20
IS = - 3.6 A, VGS = 0 V
- 0.8
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
13
20
ns
Body Diode Reverse Recovery Charge
Qrr
5
10
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 3.6 A, dI/dt = 100 A/µs, TJ = 25 °C
8
5
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTS2315
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
0.050
TJ = 25 °C
10-3
10-4
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.040
0.030
0.020
TJ = 150 °C
10-5
10-6
TJ = 25 °C
10-7
0.010
10-8
0.000
0
6
3
9
12
10-9
15
0
VGS - Gate-Source Voltage (V)
8
4
12
16
20
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
15
0.5
VGS = 8 V thru 2 V
0.4
ID - Drain Current (A)
ID - Drain Current (A)
12
9
VGS = 1.5 V
6
3
0.3
TC = 25 °C
0.2
TC = 125 °C
0.1
VGS = 1 V
TC = - 55 °C
0
0
0
0.5
1
1.5
2
0
0.35
0.7
1.05
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.1
1.4
2000
1500
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.08
VGS = 1.8 V
0.06
VGS = 2.5 V
0.04
1000
500
VGS = 4.5 V
0.02
Ciss
Coss
0
Crss
0
0
5
10
15
ID - Drain Current (A)
On-Resistance vs. Drain Current
20
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
3
DTS2315
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
1.5
ID = 4 A
6
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 4.5 A
VDS = 10 V
VDS = 5 V
4
VDS = 16 V
2
0
VGS = 4.5 V
1.3
VGS = 2.5 V
1.1
0.9
0.7
0
5
10
15
20
25
- 50
- 25
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
30
0.7
ID = 250 μA
0.6
VGS(th) (V)
Power (W)
20
0.5
0.4
10
0.3
0
0.001
0.01
0.1
1
10
0.2
100
- 50
Time (s)
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
0.080
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 4 A
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.040
TJ = 125 °C
TJ = 25 °C
0.020
0.000
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
4
0.060
1.5
0
2
4
6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
8
DTS2315
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
7
100
5.6
Limited by RDS(on)*
10
ID - Drain Current (A)
ID - Drain Current (A)
100 μs
1 ms
1
10 ms
100 ms
10 s,1 s
DC
0.1
0.01
4.2
2.8
1.4
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0
0.1
10
1
100
0
25
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
50
75
100
125
150
125
150
TC - Case Temperature (°C)
Current Derating*
Safe Operating Area, Junction-to-Ambient
2
0.9
0.7
Power (W)
Power (W)
1.5
1
0.5
0.5
0.4
0.2
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power Junction-to-Case
125
150
0
25
50
75
100
TA - Ambient Temperature (°C)
Power Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTS2315
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
Notes:
0.02
PDM
t1
0.01
Single Pulse
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 175 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
Package Information
www.din-tek.jp
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.95 BSC
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
1
Application Note
www.din-tek.jp
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
1
Legal Disclaimer Notice
Disclaimer
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
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