IRF AUIRFB8409

AUIRFB8409
AUIRFS8409
AUIRFSL8409
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other
applications.
G
l
l
l
l
l
Package Type
AUIRFB8409
AUIRFS8409
AUIRFS8409
AUIRFSL8409
TO-220
D2-Pak
D2-Pak
TO-262
195A
D
S
S
G
G
D
TO-220AB
AUIRFB8409
D2 Pak
AUIRFS8409
G
D
S
Gate
Drain
Source
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Applications
Base part number
D
c
ID (Package Limited)
D
D
Applications
VDSS
40V
RDS(on) (SMD) typ. 0.97mΩ
max. 1.2mΩ
409A
ID (Silicon Limited)
TO-262
AUIRFSL8409
Orderable Part Number
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tube
S
Quantity
50
50
800
50
AUIRFB8409
AUIRFS8409
AUIRFS8409TRL
AUIRFSL8409
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
Units
c
289c
409
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
195
IDM
Pulsed Drain Current
1524
PD @TC = 25°C
Maximum Power Dissipation
375
W
Linear Derating Factor
2.5
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
W/°C
V
VGS
EAS
EAS (tested)
d
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
d
l
e
d
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
HEXFET®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2013 International Rectifier
A
760
1360
mJ
See Fig. 14, 15, 24a, 24b
A
mJ
-55 to + 175
°C
x
300
x
10lbf in (1.1N m)
April 30, 2013
AUIRFB/S/SL8409
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
–––
0.40
°C/W
Case-to-Sink, Flat Greased Surface
0.50
–––
Junction-to-Ambient (PCB Mount)
–––
62
R θJC
Junction-to-Case
R θCS
R θJA
kl
j
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) SMD
RDS(on) TO-220
VGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
IGSS
RG
Min. Typ. Max. Units
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
––– –––
0.014 –––
0.97 1.2
1.0
1.3
–––
3.9
–––
1.0
––– 150
––– 100
––– -100
2.1
–––
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 100A
mΩ
VGS = 10V, ID = 100A
V VDS = VGS, ID = 250µA
VDS = 40V, VGS = 0V
µA
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
Ω
d
g
g
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
150 ––– –––
––– 300 450
–––
77
–––
–––
98
–––
––– 202 –––
–––
32
–––
––– 105 –––
––– 160 –––
––– 100 –––
––– 14240 –––
––– 2130 –––
––– 1460 –––
––– 2605 –––
––– 2920 –––
S
nC
ns
pF
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
VDD = 20V
ID = 30A
R G = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
g
g
i
h
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
VSD
dv/dt
trr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
f
Notes:
 Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.15mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
„ ISD ≤ 100A, di/dt ≤ 990A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
www.irf.com © 2013 International Rectifier
c
Conditions
D
MOSFET symbol
––– ––– 409
showing the
A
G
integral reverse
––– ––– 1576
S
p-n junction diode.
––– 0.86 1.2
V TJ = 25°C, IS = 100A, VGS = 0V
–––
2.7
––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
–––
52
–––
TJ = 25°C
VR = 34V,
ns
IF = 100A
–––
52
–––
TJ = 125°C
di/dt = 100A/µs
–––
97
–––
TJ = 25°C
nC
–––
97
–––
TJ = 125°C
–––
2.3
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
g
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
Š RθJC value shown is at time zero.
April 30, 2013
AUIRFB/S/SL8409
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
10
4.5V
BOTTOM
100
4.5V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
100
T J = 25°C
TJ = 175°C
10
VDS = 25V
≤60µs PULSE WIDTH
1.0
ID = 100A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2
3
4
5
6
7
Fig 3. Typical Transfer Characteristics
100000
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Ciss
10000
Coss
Crss
1000
ID= 100A
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
www.irf.com © 2013 International Rectifier
0
50
100 150 200 250 300 350 400
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013
AUIRFB/S/SL8409
10000
T J = 175°C
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
10
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
1msec
100
10
1
0.1
0.0
0.5
1.0
1.5
2.0
0.1
2.5
Limited By Package
300
200
100
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
500
25
10
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
400
1
VDS , Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
ID, Drain Current (A)
DC
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
47
Id = 1.0mA
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
2.5
EAS , Single Pulse Avalanche Energy (mJ)
3500
VDS= 0V to 32V
2.0
Energy (µJ)
10msec
Limited by package
0.1
1.5
1.0
0.5
0.0
ID
TOP
26A
52A
BOTTOM 100A
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
35
40
45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
100µsec
www.irf.com © 2013 International Rectifier
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 30, 2013
AUIRFB/S/SL8409
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
800
700
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
600
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
www.irf.com © 2013 International Rectifier
April 30, 2013
6.0
4.0
ID = 100A
VGS(th), Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (m Ω)
AUIRFB/S/SL8409
4.0
T J = 125°C
2.0
T J = 25°C
0.0
3.5
3.0
2.5
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
4
6
8
10
12
14
16
18
20
-75 -50 -25
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
25 50 75 100 125 150 175
Fig 17. Threshold Voltage vs. Temperature
12
300
10
IF = 60A
V R = 34V
8
TJ = 25°C
TJ = 125°C
IF = 60A
V R = 34V
250
QRR (nC)
IRRM (A)
0
T J , Temperature ( °C )
6
TJ = 25°C
TJ = 125°C
200
150
4
100
2
0
50
0
200
400
600
800
1000
0
200
diF /dt (A/µs)
600
800
1000
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
260
12
10
IF = 100A
V R = 34V
8
TJ = 25°C
TJ = 125°C
IF = 100A
V R = 34V
220
QRR (nC)
IRRM (A)
400
diF /dt (A/µs)
6
TJ = 25°C
TJ = 125°C
180
140
4
100
2
60
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6
www.irf.com © 2013 International Rectifier
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 21 - Typical Stored Charge vs. dif/dt
April 30, 2013
RDS(on), Drain-to -Source On Resistance ( mΩ)
AUIRFB/S/SL8409
6.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
4.0
VGS =10V
2.0
0.0
0
200
400
600
800
1000
1200
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
7
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
Driver Gate Drive
D.U.T
ƒ
-
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test
Circuit
R
D
V DS
VDS
90%
V GS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2µF
.3µF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
8
www.irf.com © 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
April 30, 2013
AUIRFB/S/SL8409
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFB8409
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRFSL8409
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS8409
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
12
www.irf.com © 2013 International Rectifier
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
April 30, 2013
AUIRFB/S/SL8409
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
2
MSL1
D PAK
TO-220
N/A
TO-262
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Class M4 (+/- 600V)
AEC-Q101-002
††
Class H3A (+/- 6000V)
AEC-Q101-001
Class C5 (+/- 2000V)
AEC-Q101-005
††
††
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
13
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations
is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of
third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
14
www.irf.com © 2013 International Rectifier
April 30, 2013