AUIRFR8405
AUIRFU8405
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
RDS(on) typ.
Applications
l
l
l
AUIRFR8405
DPak
AUIRFU8405
IPak
211A
ID (Package Limited)
D
100A
S
S
D
G
G
D-Pak
AUIRFR8405
S
c
D
D
G
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
Ordering Information
Base part
Package Type
1.98mΩ
ID (Silicon Limited)
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
for use in Automotive applications and wide variety of other applications.
l
1.65mΩ
max.
Description
l
40V
I-Pak
AUIRFU8405
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Complete Part Number
Quantity
75
2000
3000
3000
75
AUIRFR8405
AUIRFR8405TR
AUIRFR8405TRL
AUIRFR8405TRR
AUIRFU8405
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Max.
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C
A
100
l
d
804
Maximum Power Dissipation
163
W
Linear Derating Factor
1.1
W/°C
V
VGS
Gate-to-Source Voltage
± 20
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
Units
c
150c
211
Continuous Drain Current, VGS @ 10V (Silicon Limited)
e
EAS (tested)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
d
Thermal Resistance
Symbol
d
kl
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
208
mJ
256
See Fig. 14, 15, 24a, 24b
A
mJ
Parameter
RθJC
e
j
Typ.
Max.
–––
0.92
–––
50
–––
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Min. Typ. Max. Units
40
–––
–––
2.2
–––
–––
–––
–––
–––
–––
0.03
1.65
3.0
–––
–––
–––
–––
2.3
Conditions
–––
V VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 5mA
1.98 mΩ VGS = 10V, ID = 90A**
3.9
V VDS = VGS , ID = 100μA
1.0
VDS = 40V, VGS = 0V
μA
VDS = 40V, VGS = 0V, TJ = 125°C
150
VGS = 20V
100
nA
-100
VGS = -20V
Ω
–––
d
g
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd )
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
294
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
103
26
38
65
12
80
51
51
5171
770
523
939
1054
–––
155
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
Conditions
VDS = 10V, ID = 90A**
ID = 90A **
VDS =20V
VGS = 10V
ID = 90A **, VDS =0V, VGS = 10V
VDD = 26V
ID = 90A**
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V
g
g
i
h
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode)
Diode Forward Voltage
dv/dt
trr
Peak Diode Recovery
Reverse Recovery Time
Qrr
Reverse Recovery Charge
d
IRRM
e
Reverse Recovery Current
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 100A by source
bonding technology. Note that current limitations arising from heating
of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.051mH, RG = 50Ω,
IAS = 90A, VGS =10V. Part not recommended for use above
this value.
ISD ≤ 90A, di/dt ≤ 1304A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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© 2013 International Rectifier
–––
c
804l
––– 211
–––
–––
–––
0.9
1.3
–––
–––
–––
–––
–––
–––
2.1
28
29
19
20
1.1
–––
–––
–––
–––
–––
–––
Conditions
MOSFET symbol
A
V
D
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 90A**
V/ns TJ =
TJ =
ns
TJ =
TJ =
nC
TJ =
A TJ =
G
, V
GS
= 0V
175°C, IS = 90A**, VDS = 40V
25°C
VR = 34V,
125°C
IF = 90A**
di/dt = 100A/μs
25°C
g
S
g
125°C
25°C
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Pulse drain current is limited by source bonding technology.
** All AC and DC test condition based on old Package
limitation current = 90A.
April 30, 2013
AUIRFR/U8405
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
100
BOTTOM
4.8V
10
≤60μs PULSE WIDTH
BOTTOM
100
4.8V
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
10
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
T J = 175°C
100
T J = 25°C
10
1
VDS = 10V
≤60μs PULSE WIDTH
0.1
ID = 90A
VGS = 10V
1.6
1.2
0.8
0.4
2
3
4
5
6
7
8
Fig 3. Typical Transfer Characteristics
100000
-60
60
100
140
180
14.0
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C oss = C ds + C gd
Ciss
Coss
Crss
1000
20
Fig 4. Normalized On-Resistance vs. Temperature
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
10000
-20
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
ID = 90A
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
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© 2013 International Rectifier
0
20
40
60
80
100
120
140
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013
AUIRFR/U8405
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
TJ = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1000
100μsec
100
10msec
Limited by Package
10
1msec
1
VGS = 0V
0.1
0.1
0.2
0.6
1.0
1.4
0.1
1.8
Limited By Package
ID, Drain Current (A)
180
150
120
90
60
30
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
240
25
100
48
Id = 5.0mA
47
46
45
44
43
42
41
40
-60
-20
T C , Case Temperature (°C)
20
60
100
140
180
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
900
EAS , Single Pulse Avalanche Energy (mJ)
0.8
0.7
0.6
Energy (μJ)
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
210
1
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
0.5
0.4
0.3
0.2
0.1
ID
18A
37A
BOTTOM 90A
800
TOP
700
600
500
400
300
200
100
0
0.0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
DC
Tc = 25°C
Tj = 175°C
Single Pulse
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© 2013 International Rectifier
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 30, 2013
AUIRFR/U8405
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
250
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 90A
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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© 2013 International Rectifier
April 30, 2013
4.5
8.0
ID = 90A
VGS(th) , Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (m Ω)
AUIRFR/U8405
6.0
4.0
T J = 125°C
2.0
T J = 25°C
4.0
3.5
3.0
2.5
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
0.0
4
6
8
10
12
14
16
18
-75
20
-25
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
125
175
225
120
IF = 36A
V R = 34V
8
7
IF = 36A
V R = 34V
110
100
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
90
80
QRR (nC)
6
5
4
3
70
60
50
40
2
30
1
20
10
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
8
100
IF = 90A
V R = 34V
7
QRR (nC)
5
IF = 90A
V R = 34V
80
TJ = 25°C
TJ = 125°C
6
IRRM (A)
75
Fig 17. Threshold Voltage vs. Temperature
9
IRRM (A)
25
T J , Temperature ( °C )
4
3
2
TJ = 25°C
TJ = 125°C
60
40
20
1
0
0
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6
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© 2013 International Rectifier
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
April 30, 2013
RDS(on), Drain-to -Source On Resistance ( mΩ)
AUIRFR/U8405
9.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
6.0
3.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
7
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
Driver Gate Drive
D.U.T
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test
Circuit
R
D
V DS
VDS
90%
V GS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
8
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© 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
April 30, 2013
AUIRFR/U8405
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AUIRFR8405
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AUIRFU8405
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
3L-D-PAK
MSL1
I-PAK
N/A
Machine Model
Class M3 (+/- 400)††
AEC-Q101-002
ESD
Human Body Model
Class H1C (+/- 2000)††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000)††
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
12
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
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unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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www.irf.com
© 2013 International Rectifier
April 30, 2013