PD - 96401A
AUTOMOTIVE GRADE
AUIRFS3206
AUIRFSL3206
Features
l
l
l
l
l
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HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
2.4m:
3.0m:
210A
ID (Package Limited)
120A
c
D
D
G
D
S
G
D2Pak
AUIRFS3206
D
S
TO-262
AUIRFSL3206
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
e
d
f
d
Units
c
c
210
150
120
840
300
2.0
± 20
170
See Fig. 14, 15, 22a, 22b,
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
RθJC
RθJA
Junction-to-Case
k
Parameter
2
Junction-to-Ambient (PCB Mount) , D Pak
j
Typ.
Max.
Units
–––
–––
0.50
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
09/06/11
AUIRFS/SL3206
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
60
–––
–––
2.0
210
–––
–––
–––
–––
–––
–––
0.07
2.4
–––
–––
0.7
–––
–––
–––
–––
–––
–––
3.0
4.0
–––
–––
20
250
100
-100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 75A
V VDS = VGS, ID = 150μA
S VDS = 50V, ID = 75A
Ω
VDS =60V, VGS = 0V
μA
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
d
g
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Min. Typ. Max. Units
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
h
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
29
35
85
19
82
55
83
6540
720
360
1040
1230
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
Conditions
ID = 75A
VDS =30V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 30V
ID = 75A
RG =2.7Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 48V , See Fig.11
VGS = 0V, VDS = 0V to 48V
g
g
pF
i
h
Diode Characteristics
Parameter
IS
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.023mH
RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use
above this value.
2
Min. Typ. Max. Units
–––
–––
––– 210
–––
c
840
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
––– –––
1.3
V TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
VR = 51V,
–––
33
50
ns
TJ = 125°C
IF = 75A
–––
37
56
di/dt = 100A/μs
T
=
25°C
–––
41
62
J
nC
TJ = 125°C
–––
53
80
–––
2.1
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
S
g
ISD ≤ 75A, di/dt ≤ 360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
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AUIRFS/SL3206
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments:
This part
number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
3L-D2 PAK
3L-TO-262
N/A
†††
Machine Model
Class M4(+/- 800V )
(per AEC-Q101-002)
Human Body Model
Class H2(+/- 4000V )
(per AEC-Q101-001)
Charged Device Model
Class C5(+/- 2000V )
(per AEC-Q101-005)
†††
ESD
†††
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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3
AUIRFS/SL3206
1000
1000
BOTTOM
100
4.5V
BOTTOM
100
4.5V
≤ 60μs PULSE WIDTH
Tj = 175°C
≤ 60μs PULSE WIDTH
Tj = 25°C
10
10
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
100
2.5
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(Α)
10
Fig 2. Typical Output Characteristics
1000
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
≤ 60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
8.0
-60 -40 -20 0
VGS, Gate-to-Source Voltage (V)
12000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
8000
Ciss
6000
4000
Coss
2000
Crss
ID= 75A
VDS = 48V
VDS= 30V
VDS= 12V
16
12
8
4
0
0
1
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
1
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
0
40
80
120
160
200
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS/SL3206
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 175°C
100
TJ = 25°C
10
1
1000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.1
V(BR)DSS , Drain-to-Source Breakdown Voltage
ID, Drain Current (A)
160
120
80
40
0
100
125
150
100
80
ID = 5mA
75
70
65
60
55
-60 -40 -20 0
175
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
EAS, Single Pulse Avalanche Energy (mJ)
2.0
1.5
Energy (μJ)
10
Fig 8. Maximum Safe Operating Area
Limited By Package
75
1
VDS, Drain-toSource Voltage (V)
240
50
DC
0.1
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
Tc = 25°C
Tj = 175°C
Single Pulse
2.0
VSD, Source-to-Drain Voltage (V)
200
100μsec
10msec
10
0.1
0.4
1msec
100
VGS = 0V
0.2
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1.0
0.5
0.0
800
I D
21A
33A
BOTTOM 120A
TOP
600
400
200
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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60
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
AUIRFS/SL3206
1
Thermal Response ( ZthJC )
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
τJ
0.01
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
τC
τ2
τ1
τ2
τ3
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R1
R1
τ3
τ
τι (sec)
0.106416 0.0001
0.201878 0.001262
0.190923 0.011922
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
200
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 120A
160
120
80
40
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFS/SL3206
18
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 150μA
4.0
3.5
16
14
12
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
4.5
3.0
2.5
10
8
6
2.0
1.5
1.0
4
IF = 30A
VR = 51V
2
TJ = 125°C
TJ = 25°C
0
-75 -50 -25
0
25
50
75
100 125 150 175
100 200 300 400 500 600 700 800 900 1000
TJ , Temperature ( °C )
dif / dt - (A / μs)
Fig 16. Threshold Voltage Vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
18
350
16
300
14
250
QRR - (nC)
IRRM - (A)
12
10
8
6
4
IF = 45A
VR = 51V
2
TJ = 125°C
150
IF = 30A
VR = 51V
100
50
TJ = 25°C
0
200
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
350
300
QRR - (nC)
250
200
150
100
50
0
IF = 45A
VR = 51V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
www.irf.com
Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFS/SL3206
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
*
VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD
Fig 22b. Unclamped Inductive Waveforms
VDS
VDS
+
90%
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
Fig 23a. Switching Time Test Circuit
tr
td(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
8
Fig 24a. Gate Charge Test Circuit
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFS/SL3206
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUFS3206
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFS/SL3206
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUFSL3206
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFS/SL3206
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
www.irf.com
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
11
AUIRFS/SL3206
Ordering Information
Base part
AUIRFSL3206
AUIRFS3206
12
Package Type
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRFSL3206
AUIRFS3206
AUIRFS3206TRL
AUIRFS3206TRR
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AUIRFS/SL3206
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reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU”
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
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acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
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101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
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