AUTOMOTIVE GRADE Features Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * ● ● ● ● ● ● ● AUIRFS6535 AUIRFSL6535 HEXFET® Power MOSFET D G S V(BR)DSS RDS(on) typ. max. ID Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number Package Type AUIRFSL6535 AUIRFS6535 TO-262 D2Pak 300V 148m 185m 19A D D G D S G D2Pak AUIRFS6535 D S TO-262 AUIRFSL6535 G Gate D Drain Standard Pack S Source Orderable Part Number Form Tube Tube Tape and Reel Left Tape and Reel Right Quantity 50 50 800 800 AUIRFSL6535 AUIRFS6535 AUIRFS6535TRL AUIRFS6535TRR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 19 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current 100 IDM PD @TC = 25°C 13 c EAS Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) EAS (tested ) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and T STG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) VGS c Units h d A 210 1.4 ± 20 W W/°C V 216 mJ 310 See Fig.12a, 12b, 15, 16 g A mJ -55 to + 175 °C 300 Thermal Resistance j Parameter RJC Junction-to-Case RJA Junction-to-Ambient (PCB Mount) i Typ. Max. Units ––– 0.71 °C/W ––– 40 HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2012 International Rectifier July 23, 2012 AUIRFS/SL6535 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS V(BR)DSS /T J RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 300 ––– ––– 3.0 15 ––– ––– ––– ––– ––– 0.39 148 ––– ––– ––– ––– ––– ––– ––– ––– 185 5.0 ––– 20 250 100 -100 Conditions V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 5.0mA m VGS = 10V, ID = 11A V VDS = VGS , ID = 150μA VDS = 50V, ID = 11A V μA VDS = 300V, VGS = 0V VDS = 300V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V e Dynamic Electrical @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ––– ––– ––– ––– ––– ––– ––– ––– 38 12 13 15 16 22 10 4.5 57 ––– ––– ––– ––– ––– ––– ––– LS Internal Source Inductance ––– 7.5 ––– 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– 2340 195 40 1750 66 130 ––– ––– ––– ––– ––– ––– S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 240V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 240V Min. Typ. Max. Units ––– ––– 19 ––– ––– 100 showing the integral reverse 1.3 285 1485 p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V TJ = 25°C, IF = 11A, VDD = 150V di/dt = 100A/μs nC ns nH pF ID = 11A VDS = 150V VGS = 10V VDD = 300V ID = 11A RG = 5.0 VGS = 10V Between lead, e e D G f Diode Characteristics Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ISM c VSD trr Qrr ton Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 3.6mH RG = 50, IAS = 11A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value is determined from sample failure population, starting TJ = 25°C, L = 3.6mH, RG = 50, IAS = 11A, VGS =10V. 2 A ––– ––– ––– ––– 190 990 Conditions D MOSFET symbol V ns nC G e S e Intrins ic turn-on time is negligible (turn-on is dominatedby LS+LD) This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90°C. www.irf.com © 2012 International Rectifier July 23, 2012 AUIRFS/SL6535 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1 0.1 5.0V 60μs PULSE WIDTH 10 BOTTOM VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 5.0V 1 60μs PULSE WIDTH Tj = 175°C Tj = 25°C 0.01 0.1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 100 20 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (A) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 175°C 10 T J = 25°C VDS = 50V 60μs PULSE WIDTH T J = 25°C 15 10 T J = 175°C 5 V DS = 5.0V 380μs PULSE WIDTH 1.0 0 3 4 5 6 7 8 9 0 Fig 3. Typical Transfer Characteristics 1 2 3 4 5 ID,Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) 3 1 Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com © 2012 International Rectifier July 23, 2012 6 AUIRFS/SL6535 100000 VGS, Gate-to-Source Voltage (V) ID= 11A C oss = C ds + C gd 10000 C, Capacitance (pF) 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Ciss 1000 Coss Crss 100 12.0 VDS= 240V VDS= 150V 10.0 VDS= 60V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 0 1000 5 10 15 20 25 30 35 40 45 50 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 175°C 10 T J = 25°C 100 1msec 10 10msec 1 DC 0.1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 1.0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 100μsec 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com © 2012 International Rectifier July 23, 2012 AUIRFS/SL6535 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) 20 15 10 5 0 3.0 ID = 19A VGS = 10V 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180 T C , Case Temperature (°C) T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com © 2012 International Rectifier July 23, 2012 1 AUIRFS/SL6535 DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) 900 15V ID TOP 1.5A 3.0A BOTTOM 11A 800 700 600 500 400 300 200 100 0 tp 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 6.0 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) , Gate threshold Voltage (V) VG 5.5 5.0 4.5 4.0 3.5 3.0 2.5 ID = 150μA ID = 250μA ID = 1.0mA ID = 1.0A 2.0 1.5 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) 3mA IG ID Current Sampling Resistors Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit 6 www.irf.com © 2012 International Rectifier July 23, 2012 AUIRFS/SL6535 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 10 0.01 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 250 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 11A 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) Fig 16. Maximum Avalanche Energy vs. Temperature 7 www.irf.com © 2012 International Rectifier PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav July 23, 2012 AUIRFS/SL6535 D.U.T Driver Gate Drive + - - P.W. Period * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer RG Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width µs Duty Factor Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com © 2012 International Rectifier July 23, 2012 AUIRFS/SL6535 D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRFS6535 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2012 International Rectifier July 23, 2012 AUIRFS/SL6535 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AULSL6535 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html 10 www.irf.com © 2012 International Rectifier July 23, 2012 AUIRFS/SL6535 D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html 11 www.irf.com © 2012 International Rectifier July 23, 2012 AUIRFS/SL6535 Qualification Information † Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-262 N/A D2 PAK MSL1 Machine Model Class M2 (+/- 200V)†† AEC-Q101-002 ESD Human Body Model Class H1B (+/- 1000V)†† AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V)†† AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Highest passing voltage. 12 www.irf.com © 2012 International Rectifier July 23, 2012 AUIRFS/SL6535 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IRs Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 13 www.irf.com © 2012 International Rectifier July 23, 2012