IRF AUIRFS6535

AUTOMOTIVE GRADE
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
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AUIRFS6535
AUIRFSL6535
HEXFET® Power MOSFET
D
G
S
V(BR)DSS
RDS(on) typ.
max.
ID
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety of other applications.
Base part
number
Package Type
AUIRFSL6535
AUIRFS6535
TO-262
D2Pak
300V
148m
185m
19A
D
D
G
D
S
G
D2Pak
AUIRFS6535
D
S
TO-262
AUIRFSL6535
G
Gate
D
Drain
Standard Pack
S
Source
Orderable Part Number
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
800
800
AUIRFSL6535
AUIRFS6535
AUIRFS6535TRL
AUIRFS6535TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
19
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
100
IDM
PD @TC = 25°C
13
c
EAS
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
EAS (tested )
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
VGS
c
Units
h
d
A
210
1.4
± 20
W
W/°C
V
216
mJ
310
See Fig.12a, 12b, 15, 16
g
A
mJ
-55 to + 175
°C
300
Thermal Resistance
j
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient (PCB Mount)
i
Typ.
Max.
Units
–––
0.71
°C/W
–––
40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
V(BR)DSS
 V(BR)DSS /T J
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
300
–––
–––
3.0
15
–––
–––
–––
–––
–––
0.39
148
–––
–––
–––
–––
–––
–––
–––
–––
185
5.0
–––
20
250
100
-100
Conditions
V
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5.0mA
m VGS = 10V, ID = 11A
V
VDS = VGS , ID = 150μA
VDS = 50V, ID = 11A
V
μA VDS = 300V, VGS = 0V
VDS = 300V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
e
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
38
12
13
15
16
22
10
4.5
57
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2340
195
40
1750
66
130
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 240V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 240V
Min.
Typ. Max. Units
–––
–––
19
–––
–––
100
showing the
integral reverse
1.3
285
1485
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 25°C, IF = 11A, VDD = 150V
di/dt = 100A/μs
nC
ns
nH
pF
ID = 11A
VDS = 150V
VGS = 10V
VDD = 300V
ID = 11A
RG = 5.0
VGS = 10V
Between lead,
e
e
D
G
f
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ISM
c
VSD
trr
Qrr
ton
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 3.6mH
RG = 50, IAS = 11A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width  1.0ms; duty cycle  2%.
„ Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
† This value is determined from sample failure
population, starting TJ = 25°C, L = 3.6mH,
RG = 50, IAS = 11A, VGS =10V.
2
A
–––
–––
–––
–––
190
990
Conditions
D
MOSFET symbol
V
ns
nC
G
e
S
e
Intrins ic turn-on time is negligible (turn-on is dominatedby LS+LD)
‡ This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
ˆ R is measured at TJ approximately 90°C.
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
100
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
5.0V
60μs PULSE WIDTH
10
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
1
60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
20
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
10
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 175°C
10
T J = 25°C
VDS = 50V
60μs PULSE WIDTH
T J = 25°C
15
10
T J = 175°C
5
V DS = 5.0V
380μs PULSE WIDTH
1.0
0
3
4
5
6
7
8
9
0
Fig 3. Typical Transfer Characteristics
1
2
3
4
5
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
3
1
Fig 4. Typical Forward Transconductance
vs. Drain Current
www.irf.com © 2012 International Rectifier
July 23, 2012
6
AUIRFS/SL6535
100000
VGS, Gate-to-Source Voltage (V)
ID= 11A
C oss = C ds + C gd
10000
C, Capacitance (pF)
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Ciss
1000
Coss
Crss
100
12.0
VDS= 240V
VDS= 150V
10.0
VDS= 60V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
0
1000
5
10 15 20 25 30 35 40 45 50
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
10
T J = 25°C
100
1msec
10
10msec
1
DC
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1.0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100μsec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain Current (A)
20
15
10
5
0
3.0
ID = 19A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
www.irf.com © 2012 International Rectifier
July 23, 2012
1
AUIRFS/SL6535
DRIVER
L
VDS
D.U.T
RG
20V
VGS
+
V
- DD
IAS
A
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
900
15V
ID
TOP
1.5A
3.0A
BOTTOM 11A
800
700
600
500
400
300
200
100
0
tp
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
6.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V
.2F
.3F
D.U.T.
+
V
- DS
VGS(th) , Gate threshold Voltage (V)
VG
5.5
5.0
4.5
4.0
3.5
3.0
2.5
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
2.0
1.5
-75 -50 -25
VGS
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
10
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
250
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 11A
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
Fig 16. Maximum Avalanche Energy
vs. Temperature
7
www.irf.com © 2012 International Rectifier
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
July 23, 2012
AUIRFS/SL6535
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
P.W.
Period
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
VGS=10V
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple  5%
*
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width µs
Duty Factor 
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
8
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS6535
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AULSL6535
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
10
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
11
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Comments:
This
part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
TO-262
N/A
D2 PAK
MSL1
Machine Model
Class M2 (+/- 200V)††
AEC-Q101-002
ESD
Human Body Model
Class H1B (+/- 1000V)††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)††
AEC-Q101-005
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
12
www.irf.com © 2012 International Rectifier
July 23, 2012
AUIRFS/SL6535
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
13
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July 23, 2012