PD - 97703A
AUTOMOTIVE GRADE
AUIRLR3105
Features
HEXFET® Power MOSFET
Advanced Planar Technology
l Logic-Level Gate Drive
l Dynamic dV/dT Rating
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
l
V(BR)DSS
RDS(on) typ.
max
ID
D
G
S
55V
30mΩ
37mΩ
25A
D
Description
S
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
D-Pak
AUIRLR3105
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
25
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
c
18
100
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
57
0.38
± 16
W
W/°C
V
mJ
IDM
d
EAS
Single Pulse Avalanche Energy (Thermally Limited)
61
EAS (tested )
Single Pulse Avalanche Energy Tested Value
94
IAR
Avalanche Current
EAR
dv/dt
TJ
TSTG
d
i
A
See Fig. 12a, 12b, 15, 16
Repetitive Avalanche Energy d
Peak Diode Recovery dv/dt e
mJ
V/ns
3.4
-55 to + 175
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
A
°C
300
Thermal Resistance
Typ.
Max.
–––
2.65
Junction-to-Ambient (PCB Mount)
–––
50
Junction-to-Ambient
–––
110
RθJC
Junction-to-Case
RθJA
RθJA
k
Parameter
j
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
11/1/11
AUIRLR3105
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
gfs
IDSS
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55
–––
–––
–––
1.0
15
–––
–––
–––
–––
–––
0.056
30
35
–––
–––
–––
–––
–––
–––
–––
–––
37
43
3.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A
mΩ
VGS = 5.0V, ID = 13A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 15A
μA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
nA VGS = 16V
VGS = -16V
f
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
57
25
37
4.5
20
5.6
9.0
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
710
150
28
890
110
210
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
nC
ns
nH
g
pF
ID = 15A
VDS = 44V
VGS = 5.0V, See Fig. 6 & 13
VDD = 28V
ID = 15A
RG = 24 Ω
RD = 5.0Ω, See Fig. 18
Between lead,
f
f
D
G
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Limited by TJmax, starting TJ = 25°C,
L = 0.55mH, RG = 25Ω, IAS = 15A, VGS =10V.
ISD ≤ 25A, di/dt ≤ 290A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
2
Min. Typ. Max. Units
–––
–––
A
–––
–––
–––
–––
–––
–––
52
82
Conditions
MOSFET symbol
25
D
100
showing the
integral reverse
1.3
78
120
S
p-n junction diode.
TJ = 25°C, IS = 15A, VGS = 0V
TJ = 25°C, IF = 15A, VDD = 28V
di/dt = 100A/μs
V
ns
nC
G
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax ' see Fig 12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
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AUIRLR3105
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D-Pak
N/A
†††
Class M2(+/- 200V )
(per AEC-Q101-002)
Human Body Model
Class H1A(+/- 500V )
(per AEC-Q101-001)
Charged Device
Model
Class C5(+/- 2000V )
(per AEC-Q101-005)
RoHS Compliant
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
†††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRLR3105
1000
100
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
TOP
100
10
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
0.1
2.0V
0.01
0.1
1
20μs PULSE WIDTH
Tj = 25°C
10
10
2.0V
1
20μs PULSE WIDTH
Tj = 175°C
0.1
0.1
100
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
30
1000.00
T J = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
100.00
T J = 175°C
10.00
1.00
0.10
VDS = 25V
20μs PULSE WIDTH
0.01
2.0
4.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
T J = 175°C
25
20
T J = 25°C
15
10
5
VDS = 25V
20μs PULSE WIDTH
0
8.0
0
10
20
30
40
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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nce
AUIRLR3105
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds
Crss = Cgd
Coss = Cds + Cgd
1200
C, Capacitance (pF)
20
ID= 15A
SHORTED
VGS , Gate-to-Source Voltage (V)
1600
Ciss
800
Coss
400
Crss
VDS= 44V
VDS= 28V
VDS= 11V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
100.0
1000
ID, Drain-to-Source Current (A)
T J = 175°C
10.0
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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30
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1.0
20
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD, Reverse Drain Current (A)
10
100
10
100μsec
1msec
1
0.1
1.8
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRLR3105
3.0
25
2.5
ID , Drain Current (A)
20
15
10
5
0
25
50
75
100
125
150
I D = 25A
2.0
(Normalized)
RDS(on) , Drain-to-Source On Resistance
30
1.5
1.0
0.5
V GS = 10V
0.0
-60
175
-40
TC , Case Temperature ( °C)
-20
0
20
40
60
80
100 120 140 160 180
( ° C)
TJ , Junction Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
(Z thJC )
10
D = 0.50
1
Thermal Response
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
t1 / t 2
J = P DM x Z thJC
+TC
0.01
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRLR3105
15V
100
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
80
TOP
ID
6.1A
11A
BOTTOM
15A
60
40
20
0
25
50
75
100
125
Starting Tj, Junction Temperature
150
175
( ° C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
2.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2μF
VGS(th) Gate threshold Voltage (V)
VG
ID = 250μA
1.5
1.0
0.5
.3μF
D.U.T.
+
V
- DS
0.0
-75
-50
-25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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AUIRLR3105
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
10
0.05
0.10
1
0.1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
70
TOP
Single Pulse
BOT TOM 50% Duty Cycle
ID = 15A
EAR , Avalanche Energy (mJ)
60
50
40
30
20
10
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRLR3105
D.U.T
Driver Gate Drive
+
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRLR3105
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AULR3105
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLR3105
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
AUIRLR3105
Ordering Information
12
Base part
number
Package Type
AUIRLR3105
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRLR3105
AUIRLR3105TR
AUIRLR3105TRL
AUIRLR3105TRR
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AUIRLR3105
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer
products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not
responsible or liable for such altered documentation. Information of third parties may be subject to
additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or in other applications intended to support or sustain life, or in any other
application in which the failure of the IR product could create a situation where personal injury or death may
occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application,
Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or
manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified
by DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk
and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a
part number including the designation AU. Buyers acknowledge and agree that, if they use any nondesignated products in automotive applications, IR will not be responsible for any failure to meet such
requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13