Infrared LED Chip OPA7740EDD AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Typ Max Unit Condition 2.1 V IF=350mA IR=10uA Reverse Current VR 4 V Power PO 17 mW IF=350mA nm IF=50mA λP Wavelength 770 ∆λ 30 nm IF=50mA ※ Note : LED chip is mounted on TO-18 gold header without resin coatin 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness --------------------- 39.0mil x 39.0mil --------------------- 40.0mil x 40.0mil --------------------- 120um --------------------- 7.8mil P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi P Epi (d) N Side Electrode