OPA6428URO Ultra Red LED Chip Ultra Bright GaAs/AlGaInP 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaInP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Forward Voltage Symbol Min VF(1) VF(2) Max D E F 2.2 Iv 30 40 50 λd Wavelength Unit Condition 1.7 IR Reverse Current Brightness Typ V IF=1mA 2.4 V IF=20mA 100 uA VR=10V mcd IF=20mA nm IF=20mA 45 55 70 631 ∆λ 20 nm IF=20mA ※ Note : Luminous Intensity is measured on bare chips. 4. Mechanical Data (a) Emission Area -------------------------- 10mil x 10mil (b) Bottom Area -------------------------- 11mil x 11mil (c) Bonding Pad -------------------------- 130um (d) Chip Thickness -------------------------- 11mil (b) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr AlGaInP Epi (a) Substrate (d) (c) N Side Electrode