PD - 96375
AUTOMOTIVE GRADE
AUIRFP064N
HEXFET® Power MOSFET
Features
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Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
V(BR)DSS
G
S
55V
RDS(on) max.
0.008Ω
ID
110Ag
D
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
G
D
S
TO-247AC
G
D
S
G a te
D r a in
S o u rce
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
g
80 g
IDM
Pulsed Drain Current
390
PD @TC = 25°C
Units
110
c
A
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
480
mJ
IAR
Avalanche Current
EAR
dv/dt
TJ
TSTG
c
d
c
Peak Diode Recovery dv/dt e
Repetitive Avalanche Energy
59
A
20
mJ
5.0
V/ns
-55 to + 175
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
y
y
10 lbf in (1.1N m)
Thermal Resistance
Typ.
Max.
RθJC
Junction-to-Case
Parameter
–––
0.75
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
RθJA
Junction-to-Ambient
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11
AUIRFP064N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
55
–––
–––
2.0
42
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
0.057 –––
––– 0.008
–––
4.0
–––
–––
–––
25
–––
250
–––
–––
100
-100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
Ω VGS = 10V, ID = 59A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 59A
VDS = 55V, VGS = 0V
μA
VDS = 44V, VGS = 0V, TJ = 150°C
f
f
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Parameter
IS
ISM
VSD
trr
Qrr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
VDD = 25V, starting TJ = 25°C, L = 190μH,
RG = 25Ω, IAS = 59A.(See Figure 12)
ISD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
100
43
70
170
32
74
–––
–––
–––
–––
–––
5.0
–––
–––
13
–––
–––
–––
–––
4000
1300
480
–––
–––
–––
nC
ns
pF
110
g
–––
–––
390
–––
–––
–––
–––
110
450
1.3
170
680
f
f
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
D
G
S
ƒ = 1.0MHz,See Fig.5
Min. Typ. Max. Units
–––
RG = 2.5Ω
RD = 0.39Ω,See Fig.10
nH
–––
ID = 59A
VDS = 44V
VGS = 10V,See Fig.6 and 13
VDD = 28V
ID = 59A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 59A, VGS = 0V
TJ = 25°C, IF = 59A
di/dt = 100A/μs
f
f
Pulse width ≤ 300µs; duty cycle ≤ 2%
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refere to Desing Tip # 93-4
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AUIRFP064N
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
3L-TO-247
N/A
†††
Machine Model
Class M4(+/- 800V )
(per AEC-Q101-002)
†††
Human Body Model
ESD
Class H1B(+/- 4000V )
(per AEC-Q101-001)
†††
Charged Device Model
Class C5(+/- 2000V )
(per AEC-Q101-005)
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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AUIRFP064N
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Part Number
AUFP064N
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFP064N
Ordering Information
Base part
AUIRFP064N
10
Package Type
TO-247
Standard Pack
Form
Tube
Complete Part Number
Quantity
25
AUIRFP064N
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AUIRFP064N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated
with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale
supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
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and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific
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designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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