Transistors MOSFET IC SMD Type Product specification 2SK1584 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Has low on-state resistance RDS(on)=2.0 MAX.@VGS=4.0V,ID=0.3A 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 RDS(on)=1.5 MAX.@VGS=10V,ID=0.3A +0.1 4.00-0.1 Directly driven by Ics having a 5V P 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current (DC) ID 0.5 A Drain current(pulse) * ID 1.0 A Power dissipation PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle W 5% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=30V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VGS(off) VDS=10V,ID=0.1mA Yfs RDS(on) Input capacitance Ciss Output capacitance Coss VDS=5.0V,ID=0.5A Min Typ Max 10 10 1.3 1.85 350 440 2.5 A A V ms VGS=4.0V,ID=0.3A 1.2 2.0 VGS=10V,ID=0.3A 0.65 1.5 VDS=5.0V,VGS=0,f=1MHZ Unit 60 pF 50 pF Reverse transfer capacitance Crss 9 pF Turn-on delay time td(on) 80 ns 270 ns 100 ns 110 ns Rise time tr Turn-off delay time td(off) Fall time ID=0.3A,VGS(on)=4V,RL=33 ,VDD=10V,RG=10 tf Marking Marking NH http://www.twtysemi.com [email protected] 4008-318-123 1 of 1