MOSFET SMD Type MOS Field Effect Transistor 2SK1583 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Can be driven by Ics having a3V single power supply. Has low on-state resistance 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 RDS(on)=1.5 MAX.@VGS=4.0V,ID=0.3A +0.1 0.80-0.1 RDS(on)=2.0 MAX.@VGS=2.5V,ID=0.3A +0.1 4.00-0.1 +0.1 1.80-0.1 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 16 V Gate to source voltage VGSS 16 V Drain current (DC) ID 0.5 A Drain current(pulse) * ID 1.0 A Power dissipation PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle W 5% Electrical Characteristics Ta = 25 Parameter Symbol Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons IDSS VDS=16V,VGS=0 IGSS VGS= 16V,VDS=0 VGS(off) VDS=5.0V,ID=10mA Yfs RDS(on) VDS=5.0V,ID=0.3A Min Typ Max 10 10 0.9 1.2 20 60 1.5 VGS=2.5V,ID=0.3A 1.8 2.0 0.8 1.5 VDS=5.0V,VGS=0,f=1MHZ A A V ms VGS=4.0V,ID=0.3A Ciss Unit 60 pF Output capacitance Coss 70 pF Reverse transfer capacitance Crss 15 pF Turn-on delay time td(on) 95 ns 360 ns 160 ns 150 ns Rise time tr Turn-off delay time td(off) Fall time tf ID=0.3A,VGS(on)=3V,RL=33 ,VDD=10V,RG=10 Marking Marking ND www.kexin.com.cn 1