MOSFET SMD Type MOS Field Effect Transistor 2SK1657 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 IGSS= 5nA MAX.@VGS= 3.0V +0.1 1.3-0.1 +0.1 2.4-0.1 Has low gate leakage current 0.4 3 Directly driven by Ics having a 3V power supply. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 7 V ID 100 mA Drain current (DC) 200 Drain current(pulse) * ID Power dissipation PD 200 Channel temperature Tch 150 Tstg -55 to +150 Storage temperature * PW 10ms, duty cycle mA mW 5% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=30V,VGS=0 Gate leakage current IGSS VGS= 3.0V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VGS(off) VDS=3.0V,ID=1 A Yfs RDS(on) Input capacitance Ciss Output capacitance Coss VDS=3.0V,ID=10mA Min Typ Max Unit 1.0 A 5.0 0.9 1.2 20 40 1.5 V ms VGS=2.5V,ID=10mA 25 45 VGS=4.0V,ID=10mA 18 25 VDS=3.0V,VGS=0,f=1MHZ nA 15 pF 10 pF Reverse transfer capacitance Crss 1.5 pF Turn-on delay time td(on) 95 ns 360 ns 150 ns 150 ns Rise time tr Turn-off delay time td(off) Fall time tf ID=10mA,VGS(on)=3V,RL=300 ,VDD=3.0V,RG=10 Marking Marking G19 www.kexin.com.cn 1