MOSFET SMD Type MOS Field Effect Transistor 2SK1587 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Has low on-state resistance 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 RDS(on)=0.5 MAX.@VGS=4.0V,ID=1.0A +0.1 0.80-0.1 RDS(on)=0.8 MAX.@VGS=2.5V,ID=0.5A +0.1 4.00-0.1 Directly driven by Ics having a 3V power supply. 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 16 V Gate to source voltage VGSS 16 V ID 2.0 A Drain current (DC) Drain current(pulse) * ID Power dissipation PD 2.0 Channel temperature Tch 150 Tstg -55 to +150 Storage temperature * PW 10ms, duty cycle 4.0 A W 5% Electrical Characteristics Ta = 25 Parameter Symbol Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons IDSS VDS=16V,VGS=0 IGSS VGS= 16V,VDS=0 Min 5.0 0.8 VDS=5.0V,ID=1.0A 0.4 RDS(on) Max 1.2 1.6 VGS=2.5V,ID=0.5A 0.5 0.8 0.3 0.5 180 VDS=5.0V,VGS=0,f=1MHZ A A V s VGS=4.0V,ID=1.0A Ciss Unit 10 VGS(off) VDS=10V,ID=1mA Yfs Typ pF Output capacitance Coss 160 pF Reverse transfer capacitance Crss 55 pF Turn-on delay time td(on) 100 ns 700 ns 150 ns 200 ns Rise time tr Turn-off delay time td(off) Fall time tf ID=1.0A,VGS(on)=3.0V,RL=10 ,VDD=10V,RG=10 Marking Marking NF www.kexin.com.cn 1