MOSFET SMD Type MOS Field Effect Transistor 2SK2857 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low On-state resistance : MAX. (VGS = 10 V, ID = 2.5 A) 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.80-0.1 MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 m +0.1 2.60-0.1 RDS(on)1 = 220 m +0.1 4.00-0.1 Can be driven by a 5V power source. 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 60 Gate to source voltage VGSS 20 V ID 4 A Drain current Unit V Idp * 16 A Power dissipation PD 2 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons IDSS VDS=60V,VGS=0 IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA Yfs RDS(on) VDS=10V,ID=2A Min Typ Max Unit 10 A 10 1.0 11.4 2.0 1 A V S VGS=4V,ID=1.5A 150 220 m VGS=10V,ID=2.5A 110 150 m Ciss 265 VDS=10V,VGS=0,f=1MHZ pF Output capacitance Coss 125 pF Reverse transfer capacitance Crss 56 pF Turn-on delay time ton 8 ns 11 ns 52 ns 22 ns Rise time tr Turn-off delay time toff Fall time tf ID=1A,VGS(on)=10V,RL=25 ,RG=10 ,VDD=25V Marking Marking NX www.kexin.com.cn 1