MOSFET SMD Type MOS Field Effect Transistor 2SK1483 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Can be driven directly an IC operating with a 5V single power supply. 1 RDS(on)=0.8 MAX. At VGS=4V,ID=0.5A 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 2.60-0.1 RDS(on)=0.4 MAX. At VGS=10V,ID=0.5A +0.1 0.44-0.1 +0.1 0.80-0.1 Low ON-state resistance +0.1 4.00-0.1 Features 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V ID 2.0 A Drain current (DC) 4.0 Drain current(pulse) * ID Power dissipation PD 2.0 Channel temperature Tch 150 Tstg -55 to +150 Storage temperature * PW 10ms, duty cycle A W 5% Electrical Characteristics Ta = 25 Parameter Symbol Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons IDSS VDS=30V,VGS=0 IGSS VGS= 20V,VDS=0 Min Typ 10 5.0 VGS(off) VDS=10V,ID=1mA 0.9 1.2 VDS=10V,ID=0.5A 20 38 Yfs RDS(on) Max 1.5 22 40 VGS=10V,ID=0.5A 14 20 VDS=10V,VGS=0,f=1MHZ A A V ms VGS=4.0V,ID=0.5A Ciss Unit 8 pF Output capacitance Coss 7 pF Reverse transfer capacitance Crss 3 pF Turn-on delay time td(on) 15 ns Rise time tr Turn-off delay time td(off) Fall time tf ID=0.5A,VGS(on)=10V,RL=50 ,VDD=25V,RG=10 50 ns 420 ns 240 ns Marking Marking NB www.kexin.com.cn 1