Transistor IC Transistor Transistors DIP SMDType Type SMD Type Product specification 2SA1255 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High voltage. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Small package. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V IC -50 mA Collector current Base current IB -20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = -200 V, IE = 0 -0.1 ìA Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 ìA Collector-base breakdown voltage V(BR)CBO IC = -0.1 mA, IE = 0 -200 Collector-emitter breakdown voltage V(BR)CEO IC = -1 mA, IB = 0 -200 DC current gain hFE VCE = -3 V, IC = -10 mA Collector-emitter saturation voltage VCE (sat) IC = -10 mA, IB = -1 mA Base-emitter saturation voltage VBE (sat) IC = -10 mA, IB = -1 mA Transition frequency fT VCE = -10 V, IC = -2 mA Collector output capacitance Cob Turn-on time ton pulse width = 5ìs,duty cycle 2 Storage time tstg IB2=-IB1=0.6 Ma Fall time tf VCB = -10 V, IE = 0, f = 1 MHz VCC=-50V,IC=-6mA V V 70 50 240 -0.2 -1 -0.75 -1.5 100 3 V V MHz 7 pF 0.3 ìs 2 ìs 0.4 ìs hFE Classification Marking OO OY Rank O Y hFE 70 140 120 240 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1