TYSEMI 2SA1255

Transistor
IC
Transistor
Transistors
DIP
SMDType
Type
SMD
Type
Product specification
2SA1255
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
High voltage.
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Small package.
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-200
V
Collector-emitter voltage
VCEO
-200
V
Emitter-base voltage
VEBO
-5
V
IC
-50
mA
Collector current
Base current
IB
-20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = -200 V, IE = 0
-0.1
ìA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
ìA
Collector-base breakdown voltage
V(BR)CBO IC = -0.1 mA, IE = 0
-200
Collector-emitter breakdown voltage
V(BR)CEO IC = -1 mA, IB = 0
-200
DC current gain
hFE
VCE = -3 V, IC = -10 mA
Collector-emitter saturation voltage
VCE (sat) IC = -10 mA, IB = -1 mA
Base-emitter saturation voltage
VBE (sat) IC = -10 mA, IB = -1 mA
Transition frequency
fT
VCE = -10 V, IC = -2 mA
Collector output capacitance
Cob
Turn-on time
ton
pulse width = 5ìs,duty cycle 2
Storage time
tstg
IB2=-IB1=0.6 Ma
Fall time
tf
VCB = -10 V, IE = 0, f = 1 MHz
VCC=-50V,IC=-6mA
V
V
70
50
240
-0.2
-1
-0.75
-1.5
100
3
V
V
MHz
7
pF
0.3
ìs
2
ìs
0.4
ìs
hFE Classification
Marking
OO
OY
Rank
O
Y
hFE
70 140
120 240
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[email protected]
4008-318-123
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