Product specification BAP64-03 SOD-323 +0.1 1.7-0.1 +0.1 1.3-0.1 High voltage, current controlled +0.05 0.85-0.05 +0.05 0.3-0.05 Features Unit: mm RF resistor for RF attenuators and switches Low diode capacitance +0.1 2.6-0.1 1.0max Low diode forward resistance 0.375 0.475 Low series inductance +0.05 0.1-0.02 For applications up to 3 GHz. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage VR 175 V continuous forward current IF 100 mA 500 mW total power dissipation Ptot Ts = 90 storage temperature Tstg -65 +150 junction temperature Tj -65 +150 thermal resistance from junction to soldering point Rth j-s 120 K/W Electrical Characteristics Ta = 25 Parameter Symbol forward voltage Conditions VF reverse leakage current diode capacitance Cd diode forward resistance rD 0.95 V V VR = 20 V 1 nA pF VR = 0; f = 1 MHz 0.48 VR = 1 V; f = 1 MHz 0.35 0.5 VR = 20V; f = 1 MHz 0.23 0.35 IF = 0.5 mA; f = 100 MHz; note 1 20 40 IF = 1 mA; f = 100 MHz; note 1 10 20 IF = 10 mA; f = 100 MHz; note 1 2 3.8 IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 RL = 100 Unit 10 L series inductance Max 1.1 when switched from IF = 10 mA to IR = 6 mA; charge carrier life time Typ VR = 175 V IF = 50 mA IR Min 1.55 ns 1.68 nH ;measured at IR = 3 mA LS Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking A3 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1