Transistors IC SMD Type Product specification 2SD2198 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features 5 .6 0 +0.2 4.57-0.2 0.1max 5 .2 8 -0+ 0.2.2 +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 Low collector-to-emitter saturation voltage. +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 Surface mount type device making the following possible. +0.1 5.08-0.1 +0.2 0.4-0.2 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 5 A Collector current (pulse) ICP 9 A 1.65 W 30 W Collector dissipation PC TC = 25 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SD2198 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB = 40V , IE = 0 0.1 mA Emitter cutoff current IEBO VEB = 4V , IC = 0 0.1 mA DC current Gain hFE Gain bandwidth product fT Output capacitance Cob VCE = 2V , IC = 1A 70 VCE = 2V , IC = 3A 30 280 VCE = 5V , IC = 1A 30 MHz VCB = 10V , f = 1MHz 100 pF VCE(sat) IC = 3A , IB = 0.3A Collector-emitter saturation voltage 0.4 V Collector-to-base breakdown voltage V(BR)CBO IC = 1mA , IE = 0 60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-base breakdown voltage V(BR)EBO IE = 1mA , IC = 0 6 V Turn-on time ton 0.1 ìs Storage time tstg 1.4 ìs tf 0.2 ìs Fall time hFE Classification Rank Q R hFE 70 140 100 200 http://www.twtysemi.com S 140 280 [email protected] 4008-318-123 2 of 2