BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed SOT-363 A D2 · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: KXX: Product marking code YY: Date code Marking Code: K84 Weight: 0.006 grams (approx.) Maximum Ratings B C KXX YY · · S1 KXX YY Mechanical Data · · G1 S2 G2 D1 H K M J D F D2 G1 S1 S2 G2 D1 L Dim A Min Max 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 H 1.80 2.20 J ¾ 0.10 0.40 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm @ TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 3) Gate-Source Voltage Continuous Drain Current (Note 1) Continuous Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol BSS84DW Units VDSS -50 V VDGR -50 V VGSS ±20 V ID -130 mA Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width £ 300ms, duty cycle £ 2%. 3. RGS £ 20KW. DS30204 Rev. C-2 1 of 2 BSS84DW Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage @ TA = 25°C unless otherwise specified Symbol Min Typ Max BVDSS -50 -75 ¾ V VGS = 0V, ID = -250mA µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C nA VGS = ±20V, VDS = 0V Zero Gate Voltage Drain Current IDSS ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 Gate-Body Leakage IGSS ¾ ¾ ±10 Unit Test Condition ON CHARACTERISTICS (Note 2) VGS(th) -0.8 -1.6 -2.0 V VDS = VGS, ID = -1mA RDS (ON) ¾ 6 10 W VGS = -5V, ID = 0.100A gFS .05 ¾ ¾ S VDS = -25V, ID = 0.1A Input Capacitance Ciss ¾ ¾ 45 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 12 pF Turn-On Delay Time tD(ON) ¾ 10 ¾ ns Turn-Off Delay Time tD(OFF) ¾ 18 ¾ ns Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width £ 300ms, duty cycle £ 2%. 3. RGS £ 20KW. DS30204 Rev. C-2 2 of 2 BSS84DW