PD - 96385A
AUTOMOTIVE GRADE
AUIRL1404S
AUIRL1404L
Features
l
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HEXFET® Power MOSFET
Advanced Planar Technology
Logic-Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
V(BR)DSS
40V
RDS(on) max.
4mΩ
h
ID
S
160A
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
D2Pak
AUIRL1404S
TO-262
AUIRL1404L
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
160
110
640
3.8
200
1.3
±20
520
95
20
5.0
-55 to + 175
c
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
c
Units
h
h
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
d
c
e
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Typ.
Max.
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB mounted)
–––
0.50
–––
0.75
–––
40
°C/W
i
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
09/06/11
AUIRL1404S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
Parameter
40
–––
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.038
–––
–––
–––
4.0
–––
–––
5.9
RDS(on)
Static Drain-to-Source On-Resistance
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 95A
f
f
VGS = 4.3V, ID = 40A
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
IDSS
Forward Transconductance
93
–––
–––
S
VDS = 25V, ID = 95A
Drain-to-Source Leakage Current
–––
–––
20
μA
VDS = 40V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
VDS = VGS, ID = 250μA
VDS = 32V, VGS = 0V, TJ = 150°C
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
–––
140
Qgs
Gate-to-Source Charge
–––
–––
48
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
60
VGS = 5.0V,See Fig 6
td(on)
Turn-On Delay Time
–––
18
–––
VDD = 20V
tr
Rise Time
–––
270
–––
td(off)
Turn-Off Delay Time
–––
38
–––
tf
Fall Time
–––
130
–––
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
4.5
–––
–––
7.5
–––
ID = 95A
nC
VDS = 32V
f
ID = 95A
ns
RG = 2.5Ω,VGS = 4.5V
RD = 0.25Ω
f
Between lead,
nH
D
6mm (0.25in.)
Between lead,
G
Ciss
Input Capacitance
–––
6600
–––
and center of die contact
VGS = 0V
Coss
Output Capacitance
–––
1700
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
350
–––
Coss
Output Capacitance
–––
6700
–––
Coss
Output Capacitance
Effective Output Capacitance
Coss eff.
pF
S
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 1.0V, ƒ =1.0MHz
–––
1500
–––
VGS = 0V, VDS = 32V, ƒ =1.0MHz
–––
1500
–––
VGS = 0V, VDS = 0V to 32V
Min.
Typ.
Max.
g
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
h
Conditions
MOSFET symbol
–––
–––
(Body Diode)
Diode Forward Voltage
–––
–––
640
–––
–––
1.3
trr
Reverse Recovery Time
–––
63
94
ns
Qrr
Reverse Recovery Charge
–––
170
250
nC
ton
Forward Turn-On Time
c
160
Units
A
V
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 95A, VGS = 0V
f
S
TJ = 25°C, IF = 95A
di/dt = 100A/μs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 0.35mH, RG = 25Ω, IAS = 95A.
(See Figure 12)
ISD ≤ 95A, di/dt ≤ 160A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS.
2
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
This is applied to D2Pak, When mounted on 1" square PCB
(FR-4 or G-10 Material) . For recommended footprint and
soldering techniques refer to application note #AN-994.
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AUIRL1404S/L
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
3L-D2 PAK
MSL1
3L-TO-262
N/A
†††
Machine Model
Class M4(+/- 800V )
(per AEC-Q101-002)
Human Body Model
Class H2(+/- 4000V )
(per AEC-Q101-001)
Charged Device Model
Class C5(+/- 2000V )
(per AEC-Q101-005)
†††
ESD
†††
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
†††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRL1404S/L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.3V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
4.3V
4.3V
100
100
20μs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
2.5
V DS = 15V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
4.0
10
100
Fig 2. Typical Output Characteristics
1000
TJ = 175 ° C
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
20μs PULSE WIDTH
TJ = 175 °C
10
0.1
100
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.3V
TOP
TOP
ID = 160A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRL1404S/L
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
8000
Ciss
6000
4000
Coss
2000
20
VGS , Gate-to-Source Voltage (V)
10000
1
10
VDS = 32V
VDS = 20V
16
12
8
4
Crss
0
ID = 95A
0
100
VDS , Drain-to-Source Voltage (V)
FOR TEST CIRCUIT
SEE FIGURE 13
0
200
300
400
500
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
100
1000
TJ = 175 ° C
TJ = 25 ° C
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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100us
100
10
1
0.0
10us
3.0
1ms
10
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRL1404S/L
160
LIMITED BY PACKAGE
V GS
120
ID , Drain Current (A)
RD
V DS
D.U.T.
RG
+
-V DD
80
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
0
25
50
75
100
125
150
VDS
175
90%
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRL1404S/L
15V
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01Ω
tp
TOP
1000
DRIVER
L
VDS
EAS , Single Pulse Avalanche Energy (mJ)
1200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
BOTTOM
ID
39A
67A
95A
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
10 V
50KΩ
12V
QGS
.2μF
.3μF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
AUIRL1404S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
VGS
*
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
V DD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
V[ GS=10V]
***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
8
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AUIRL1404S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUL1404S
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRL1404S/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUL1404L
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRL1404S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
11
AUIRL1404S/L
Ordering Information
Base part
AUIRL1404L
AUIRL1404S
12
Package Type
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRL1404L
AUIRL1404S
AUIRL1404STRL
AUIRL1404STRR
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AUIRL1404S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to
support this warranty. Except where mandated by government requirements, testing of all parameters of each product
is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information
with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the
design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are
designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13