ZXM62N03G Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Mechanical Data ID V(BR)DSS 30V RDS(on) TA = +25°C 0.11Ω @ VGS= 10V 4.7A Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.112 grams (Approximate) Features and Benefits Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Applications DC-DC Converters Audio Output Stage Relay and Soleniod driving Motor Control SOT223 D G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number ZXM62N03GTA ZXM62N03GTA Notes: Marking ZXM62N03 ZXM62N03 Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 4,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information ZVN ZXM6 2N03 4310 ZXM62N03G Document number: DS33481 Rev. 2 - 2 YWW SOT223 ZXM62N03 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62N03G Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Symbol VDSS Value 30 Unit V VGSS ±20 4.7 3.8 3.4 16 2.6 16 V Value 2.0 16 3.9 31 62.5 32 -55 to +150 Unit Gate-Source Voltage Continuous Drain Current (VGS=10V; TA = +25°C) (Note 6) (VGS=10V; TA = +70°C) (Note 6) (VGS=10V; TA = +25°C) (Note 5) Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 7) ID IDM IS ISM A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation at TA = +25°C (Note 5) Linear Derating Factor Power Dissipation at TA = +25°C (Note 6) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD PD RθJA RθJA TJ, TSTG W mW/°C W mW/°C °C/W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 1 RDS(ON) - Ω Forward Transconductance (Notes 8 & 10) gfs 1.1 0.11 0.15 - V Static Drain-Source On-Resistance (Note 8) - Diode Forward Voltage (Note 8) VSD - - 0.95 V VDS = VGS, ID =250µA VGS = 10V, ID = 2.2A VGS = 4.5V, ID =1.1A VDS = 15V, ID = 1.1A TJ= +25°C, IS=2.2A, Ciss Coss Crss - 380 90 30 2.9 5.6 11.7 6.4 - - pF pF pF ns ns ns ns 9.6 1.7 2.8 18.8 11.4 - nC nC nC ns nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) Reverse Recovery Time Reverse Recovery Charge Notes: tD(ON) tR tD(OFF) tF Qg Qgs Qgd trr Qrr S Test Condition VGS=0V VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 15V, ID = 2.2A, VGS = 10V, RGS =6Ω VDS=24V,VGS=10V, ID=2.2A TJ=25°C, IF=2.2A, di/dt= 100A/µs 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t≦10 seconds. 7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Width300µs. Duty cycle ≦2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. ZXM62N03G Document number: DS33481 Rev. 2 - 2 2 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62N03G ZXM62N03G Document number: DS33481 Rev. 2 - 2 3 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62N03G Typical Characteristics ZXM62N03G Document number: DS33481 Rev. 2 - 2 4 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62N03G Typical Characteristics ZXM62N03G Document number: DS33481 Rev. 2 - 2 5 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62N03G Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0° -1 0° e A1 7° 7° A SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X ZXM62N03G Document number: DS33481 Rev. 2 - 2 C 6 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62N03G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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