Datasheet - Diodes Incorporated

ZVP4525E6
250V P-CHANNEL ENHANCEMENT MODE MOSFET
RDS(ON) max
ID max
TA = +25°C
14Ω @ VGS= -10V
-197mA
18Ω @ VGS= -3.5V
-175mA
V(BR)DSS
-250V
Features and Benefits
Description
This 250V enhancement mode P-channel MOSFET provides users
with a competitive specification. It offers efficient power handling
capability, high impedance and is free from thermal runaway and
thermally induced secondary breakdown. Applications benefiting from
this device include a variety of Telecom and general high voltage
circuits.
Applications
•
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•
•
•
•
•
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Earth Recall and Dialing Switches
Electronic Hook Switches
High Voltage Power MOSFET Drivers
Telecom Call Routers
Solid State Relays
•
SOT26
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary N-channel Type ZVN4525E6
SOT23-6 package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
SOT89 and SOT223 versions are also available.
Case: SOT26
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight 0.018 grams (Approximate)
D
D
D
D
G
S
D
G
S
Equivalent Circuit
Top View
Pin-Out
Top View
Ordering Information (Note 4)
Part Number
ZVP4525E6TA
ZVP4525E6TC
Notes:
Case
SOT26
SOT26
Quantity per reel
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
P52
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
ZVP4525E6
Document Number DS33411 Rev. 2 - 2
Mar
3
YM
ADVANCE INFORMATION
Product Summary
2017
E
Apr
4
P52 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
2018
F
May
5
Jun
6
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2019
G
Jul
7
2020
H
Aug
8
Sep
9
2021
I
Oct
O
2022
J
Nov
N
Dec
D
March 2015
© Diodes Incorporated
ZVP4525E6
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Symbol
Value
Unit
VDSS
-250
V
±40
V
VGS
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
(Note 5)
TA = +70°C (Note 5)
(Note 7)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
ID
-197
-157
mA
IDM
-1
A
IS
-0.75
A
ISM
-1
A
Symbol
Value
Unit
W
mW/°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
(Note 5)
PD
1.1
8.8
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
RθJA
113
68
°C/W
TJ, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Notes:
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors.
Thermal Characteristics
ZVP4525E6
Document Number DS33411 Rev. 2 - 2
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ZVP4525E6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
-250
-285

V
-500
nA
VDS = -250V, VGS = 0V
ID = -1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS

-30
Gate-Source Leakage
IGSS

±1
±100
nA
VGS = ±40V, VDS = 0V
VGS(th)
-0.8
-1.5
-2.0
V
ID = -1mA, VDS = VGS

10
14
Ω
VGS = -10V, ID = -200mA

13
18
80
200

ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 10)
Diode Forward Voltage (Note 9)
RDS(ON)
gfs
-0.86
-0.97

73


12.8

VSD

Ciss
VGS = -3.5V, ID = -100mA
mS
VDS = -10V, ID = -0.15A
V
IS = -200mA, VGS = 0V,
TJ = +25°C
pF
VDS = -25V, VGS = 0V
f = 1MHz
nC
VDS = -25V, VGS = -10V,
ID = -200mA (refer to
test circuit)
ns
VDD = -30V, VGS = -10V
ID = -200mA, RG = 50Ω (refer to
test circuit)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss

3.91

Total Gate Charge (Note 9)
Qg

2.45
2.45
Gate-Source Charge (Note 9)
Qgs

0.22
0.31
Gate-Drain Charge (Note 9)
Qgd

0.45
0.63
Turn-On Delay Time (Note 9)
tD(on)

1.53

Turn-On Rise Time (Note 9)
tr

3.78

Turn-Off Delay Time (Note 9)
tD(off)

17.5

Turn-Off Fall Time (Note 9)
tf

7.85

Reverse Recovery Time
trr

205
290
ns
Reverse Recovery Charge
Qrr

21
29
nC
Notes:
IF = -200mA, di/dt = 100A/µs,
TJ = +25°C
8. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperatures.
10. For design aid only, not subject to production testing.
ZVP4525E6
Document Number DS33411 Rev. 2 - 2
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ZVP4525E6
ADVANCE INFORMATION
Typical Characteristics
ZVP4525E6
Document Number DS33411 Rev. 2 - 2
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ZVP4525E6
ADVANCE INFORMATION
Typical Characteristics (continued)
Test Circuits
ZVP4525E6
Document Number DS33411 Rev. 2 - 2
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ZVP4525E6
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
ADVANCE INFORMATION
A
SOT26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D

 0.95
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
0°
8°
α

All Dimensions in mm
B C
H
K
M
J
L
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
Z
C2
Dimensions Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C1
G
C1
C2
Y
2.40
0.95
X
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ZVP4525E6
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
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Document Number DS33411 Rev. 2 - 2
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